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公开(公告)号：KR1020170086907A
公开(公告)日：2017-07-27
申请号：KR1020160006517
申请日：2016-01-19
Applicant: 한국전자통신연구원
IPC: H01L21/02 , H01L21/04 , H01L21/324 , H01L21/3215
Abstract: 본발명은반도체소자의선택적도핑방법에관한것이다. 이에따른본 발명은, 반도체소자의선택적도핑방법으로, 기판상에증착된희생층상에도핑영역을정의하기위한마스크층을형성하는단계, 상기마스크층 상에증착되는도펀트물질을상기기판내부로확산하여도핑영역을형성하는제1 열처리단계, 상기도핑영역으로확산된도펀트물질을활성화하는제2 열처리단계및 상기희생층을제거하는단계를포함하는것을특징으로하는선택적도핑방법에관한것이다.
Abstract translation: 本发明涉及一种半导体器件的选择性掺杂方法。 在本发明中，半导体器件的选择性掺杂方法，包括：形成掩模层，以限定一个掺杂区域沉积在基底上的牺牲层上，使掺杂剂扩散的材料被沉积在掩模层到衬底按照 第一热处理以形成一个掺杂区，用于激活掺杂剂材料扩散到掺杂区和一个选择性掺杂方法，包括移除所述牺牲层的步骤的第2热处理工序。
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公开(公告)号：KR101245371B1
公开(公告)日：2013-03-19
申请号：KR1020090055080
申请日：2009-06-19
Applicant: 한국전자통신연구원
IPC: H01L31/04
CPC classification number: H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/072 , Y02E10/52 , Y02E10/541 , Y02P70/521
Abstract: 태양전지 및 그 제조방법이 제공된다. 태양전지는 기판 상의 금속 전극층, 금속 전극층 상의 광흡수층, 광흡수층 상의 인듐 갈륨 질화막(In
X Ga
1-X N)을 포함하는 버퍼층 및 버퍼층 상의 투명 전극층을 포함한다.
버퍼층, 인듐 갈륨 질화막Abstract translation: 提供了一种太阳能电池及其制造方法。 太阳能电池包括金属电极层，光吸收层，缓冲层和透明电极层。 金属电极层设置在基板上。 光吸收层设置在金属电极层上。 缓冲层设置在光吸收层上并包括氮化铟镓（In x Ga 1-x N）。 透明电极层设置在缓冲层上。
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公开(公告)号：KR1020070061043A
公开(公告)日：2007-06-13
申请号：KR1020060036356
申请日：2006-04-21
Applicant: 한국전자통신연구원
IPC: H01S5/30
CPC classification number: H01S5/2009 , H01L21/761 , H01L29/0646 , H01L31/141 , H01S5/2077
Abstract: A semiconductor laser diode using change of an energy band structure is provided to raise an electric barrier through a critical value changing from type 1 to type 2. A semiconductor laser diode using change of an energy band structure includes an active layer, a cladding layer, a second compound semiconductor layer, and a third compound semiconductor layer. The active layer has a structure of a quantum well. The cladding layer is contacted to one side of the active layer, and is composed of a first compound semiconductor layer. The second compound semiconductor layer is contacted to the other end of the active layer, and forms an energy step for the active layer. The third compound semiconductor layer is inserted into the second semiconductor layer, and separates the second compound semiconductor layer to have a critical point having a non-conductive band energy step of "0" with the second compound semiconductor layer.
Abstract translation: 提供使用能带结构变化的半导体激光二极管，以通过从类型1改变为类型2的临界值来提高电势。使用能带结构的改变的半导体激光二极管包括有源层，包层， 第二化合物半导体层和第三化合物半导体层。 有源层具有量子阱的结构。 包覆层与有源层的一侧接触，由第一化合物半导体层构成。 第二化合物半导体层与活性层的另一端接触，形成有源层的能量步骤。 将第三化合物半导体层插入到第二半导体层中，并且使第二化合物半导体层与第二化合物半导体层分离为具有“0”的非导电带能级的临界点。
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公开(公告)号：KR1020070061003A
公开(公告)日：2007-06-13
申请号：KR1020060027972
申请日：2006-03-28
Applicant: 한국전자통신연구원
IPC: H01L21/306 , H01S5/183
CPC classification number: H01L21/30621 , H01S5/183 , H01S5/2081
Abstract: A method for etching a multi-layer of group III-V semiconductor materials and a method for manufacturing a vertical cavity surface emitting laser device are provided to obtain clearness and smoothness of an etched surface by etching the multi-layer with plasma of a mixed gas including Cl2, Ar, CH4, and H2. A first semiconductor layer(22) is formed with group III-V semiconductors. A second semiconductor layer(24) is formed with group III-V semiconductors that are different from the group III-V semiconductors of the first semiconductor layer. A method for etching a lamination structure including the first and second semiconductor layers includes a process for etching the lamination structure by exposing the lamination structure to plasma of a mixed gas including Cl2, Ar, CH4, and H2.
Abstract translation: 提供一种用于蚀刻III-V族III族半导体材料的多层的方法和用于制造垂直腔表面发射激光器件的方法，以通过用混合气体的等离子体蚀刻多层来获得蚀刻表面的清晰度和平滑度 包括Cl2，Ar，CH4和H2。 第III-V族半导体形成第一半导体层（22）。 第二半导体层（24）由与第一半导体层的III-V族半导体不同的III-V族半导体形成。 蚀刻包括第一和第二半导体层的叠层结构的方法包括通过将层压结构暴露于包括Cl 2，Ar，CH 4和H 2的混合气体的等离子体来蚀刻层压结构的方法。
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Patent Agency Ranking
公开(公告)号：KR100537079B1
公开(公告)日：2005-12-16
申请号：KR1020020081481
申请日：2002-12-18
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: 본 발명은 기판상에 유전체 박막을 선택적으로 오픈하여 이 부위에 양자점을 형성함으로써, 양자점 파장을 조절할 수 있도록 하는 방법을 제시한다. 위치에 따라 서로 다른 선택적 면적을 허용하므로써 동시에 서로 다른 양자점 파장을 가지도록 할 수 있으며 이러한 기술을 활용하여 파장대역의 폭을 조절하거나 여러가지 기능이 한 칩 위에서 동작하는 단일칩으로 집적된 광자집적회로 소자를 구현할 수 있다.
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公开(公告)号：KR100397371B1
公开(公告)日：2003-09-13
申请号：KR1020010069489
申请日：2001-11-08
Applicant: 한국전자통신연구원
IPC: H01S5/183
CPC classification number: B82Y20/00 , H01S5/18311 , H01S5/18341 , H01S5/18344 , H01S5/34306 , H01S5/34313 , H01S5/3434
Abstract: A long-wavelength VCSEL is provided. The laser includes a first conductive semiconductor substrate, lower mirror layers that are formed on the semiconductor substrate and are proper to the Bregg-reflection, an active layer formed on the lower mirror layer, a current passage layer that is formed on the active layer as a path through which an electric current flows into the active layer, current blocking layers that are formed on the active layer to encompass the current passage layer and limit the path through which an electric current flows into the active layer, an intra-cavity contact layer formed on a portion of the current passage layer and the current blocking layer, upper mirror layers that are formed on a portion of the intra-cavity contact layer and are proper to the Bragg-reflection, a first electrode formed on the exposed surface of the intra-cavity contact layer and the upper mirror layers, and a second electrode formed on a predetermined surface of the semiconductor substrate
Abstract translation: 提供长波长VCSEL。 该激光器包括第一导电半导体衬底，形成在半导体衬底上并且适合于Bregg反射的下镜层，形成在下镜像层上的有源层，形成在有源层上的电流通过层， 电流流入有源层的路径，形成在有源层上以包围电流通过层并限制电流流入有源层的路径的电流阻挡层，腔内接触层 形成在所述电流通过层和所述电流阻挡层的一部分上的第一电极，形成在所述腔内接触层的一部分上且适于布拉格反射的上镜层，形成在所述第一电极的暴露表面上的第一电极 腔内接触层和上镜层，以及形成在半导体衬底的预定表面上的第二电极
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公开(公告)号：KR1020030062110A
公开(公告)日：2003-07-23
申请号：KR1020020002534
申请日：2002-01-16
Applicant: 한국전자통신연구원
IPC: H01S5/183
Abstract: PURPOSE: A multi-channel long wavelength VCSEL array and a fabricating method thereof are provided to form constantly an interval of a laser oscillation wavelength by controlling a resonant interval. CONSTITUTION: A multi-channel long wavelength VCSEL array includes a semiconductor substrate(10), a bottom mirror(20), an active region(30), a current limit layer(40), a superlattice control layer(50), and a top mirror(60). The bottom mirror is formed on the semiconductor substrate. The active region is formed on the bottom mirror. The current limit layer is formed on the active region in order to limit efficiently the current and enhance the efficiency of the heat transfer. The superlattice control layer is formed on the current limit layer in order to control an interval of laser oscillation wavelength. The top mirror is formed on the superlattice control layer.
Abstract translation: 目的：提供多通道长波长VCSEL阵列及其制造方法，以通过控制谐振间隔来恒定地形成激光振荡波长的间隔。 构成：多通道长波长VCSEL阵列包括半导体衬底（10），底镜（20），有源区（30），限流层（40），超晶格控制层（50）和 顶镜（60）。 底镜形成在半导体衬底上。 有源区形成在底镜上。 在有源区上形成电流限制层，以有效地限制电流并提高传热的效率。 为了控制激光振荡波长的间隔，在电流限制层上形成超晶格控制层。 上镜子形成在超晶格控制层上。
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公开(公告)号：KR1020030062073A
公开(公告)日：2003-07-23
申请号：KR1020020002494
申请日：2002-01-16
Applicant: 한국전자통신연구원
IPC: H01S5/18
CPC classification number: H01S5/18308 , H01L33/145 , H01S5/02461 , H01S5/0421 , H01S5/18341 , H01S5/18369 , H01S5/2063
Abstract: PURPOSE: A method for fabricating a long wavelength VCSEL(Vertical-Cavity Surface-Emitting Laser) is provided to reduce a current implantation diameter by implanting heavy ions and regrowing a crystal. CONSTITUTION: A lower dispersion Bragg reflection mirror(10), a laser active medium(11), and a heat spreading layer(12) are sequentially grown by considering the thickness of a resonator. A photoresist mask is formed on the heat spreading layer. A current confining layer(13) is formed by implanting ions into an exposed portion of the heat spreading layer. The photoresist mask is removed. An Inp layer(14) and a current spreading layer(15) are formed regrown on the heat spreading layer. An electrode(16) is formed on the current spreading layer. An upper dispersion Bragg reflection mirror(17) is formed thereon. An Au reflective mirror(18) is formed on the upper dispersion Bragg reflection mirror.
Abstract translation: 目的：提供一种用于制造长波长VCSEL（垂直腔表面发射激光器）的方法，以通过注入重离子并重新生长晶体来减小电流注入直径。 构成：通过考虑谐振器的厚度，顺序地生长较低色散的布拉格反射镜（10），激光活性介质（11）和散热层（12）。 在散热层上形成光刻胶掩模。 通过将离子注入到散热层的暴露部分中形成电流限制层（13）。 去除光致抗蚀剂掩模。 在热扩散层上重新形成Inp层（14）和电流扩展层（15）。 在电流扩散层上形成电极（16）。 在其上形成上色散布拉格反射镜（17）。 在上分散布拉格反射镜上形成Au反射镜（18）。
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公开(公告)号：KR1020170014877A
公开(公告)日：2017-02-08
申请号：KR1020150108873
申请日：2015-07-31
Applicant: 한국전자통신연구원
Abstract: 본발명은기계적특성이취약한장파장적외선(long wavelength infrared: LWIR) 광학소재와내 마모성을향상시키기위한경질박막사이의열 스트레스(thermal stress)를완화시키기위한열 완충층(thermal buffer layer)를삽입하는방법을제공한다. 이러한열 완충층은경질박막의균열및 벗겨짐(peeling)을방지하는장점을가진다.
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