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11.COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE 有权
Title translation: IS组合物和PROCESS FOR AFTER蚀刻脱除光致抗蚀剂和/或牺牲ANTI REFLEX MATERIAL ON沉积在衬底公开(公告)号:EP1730600A4
公开(公告)日:2010-07-28
申请号:EP05724288
申请日:2005-03-02
Applicant: ADVANCED TECH MATERIALS
Inventor: RATH MELISSA K , BERNHARD DAVID D , MINSEK DAVID , KORZENSKI MICHAEL B , BAUM THOMAS H
CPC classification number: C11D3/044 , C11D3/30 , C11D3/3947 , C11D7/06 , C11D11/0047 , G03F7/423 , G03F7/425
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12.PH BUFFERED COMPOSITIONS FOR CLEANING SEMICONDUCTOR SUBSTRATES 审中-公开
Title translation: PH缓冲组合物用于清洗半导体衬底公开(公告)号:EP1488286A4
公开(公告)日:2005-09-28
申请号:EP03714254
申请日:2003-03-18
Applicant: ADVANCED TECH MATERIALS
Inventor: SEIJO MA FATIMA , WOJTCZAK WILLIAM A , BERNHARD DAVID , BAUM THOMAS H , MINSEK DAVID
IPC: C11D7/10 , C11D7/22 , C11D7/26 , C11D7/28 , C11D7/32 , C11D11/00 , C23G1/02 , G03F7/42 , H01L21/02 , H01L21/28 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/316 , H01L21/3213 , H01L21/768 , C23G1/06 , C23G1/14 , C23G1/18 , C23G5/00 , C23G5/02 , C23G5/032 , C23G5/036
CPC classification number: H01L21/02063 , C11D7/265 , C11D7/28 , C11D11/0047 , G03F7/425 , H01L21/02071
Abstract: A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.
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