公开(公告)号：WO2004059700A3

公开(公告)日：2004-11-04

申请号：PCT/US0340439

申请日：2003-12-17

Applicant: ADVANCED TECH MATERIALS

Inventor： MINSEK DAVID W ,  MURPHY MELISSA K ,  BERNHARD DAVID D ,  BAUM THOMAS H

IPC: C11D7/06 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311 ,  G03C5/00 ,  B08B3/00

CPC classification number: C11D3/30 ,  C11D1/72 ,  C11D3/044 ,  C11D3/3947 ,  C11D3/3955 ,  C11D3/3956 ,  C11D3/43 ,  C11D7/06 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  Y10S438/906

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Abstract translation: 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。

公开(公告)号：WO2007047365A2

公开(公告)日：2007-04-26

申请号：PCT/US2006039888

申请日：2006-10-12

Applicant: ADVANCED TECH MATERIALS ,  RATH MELISSA K ,  BERNHARD DAVID D ,  BAUM THOMAS H ,  JIANG PING ,  ZHOU RENJIE ,  KORZENSKI MICHAEL B

Inventor： RATH MELISSA K ,  BERNHARD DAVID D ,  BAUM THOMAS H ,  JIANG PING ,  ZHOU RENJIE ,  KORZENSKI MICHAEL B

IPC: C11D3/30

CPC classification number: C11D3/26 ,  C09D9/04 ,  C11D3/30 ,  C11D3/3773 ,  C11D3/43 ,  C11D7/32 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/3212

Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

Abstract translation: 一种液体去除组合物和用于从其上具有相同材料的微电子器件去除光致抗蚀剂和/或牺牲性抗反射涂层（SARC）材料的方法。 液体去除组合物包含至少一种有机季碱和至少一种表面相互作用增强添加剂。 该组合物在集成电路制造过程中至少部分去除光致抗蚀剂和/或SARC材料，同时微电子器件上的金属物质如铜和钴的蚀刻最少，并且不损伤微电子中使用的低k介电材料 设备架构。

公开(公告)号：WO2007027522A2

公开(公告)日：2007-03-08

申请号：PCT/US2006033237

申请日：2006-08-25

Applicant: ADVANCED TECH MATERIALS ,  BERNHARD DAVID D ,  RATH MELISSA K

Inventor： BERNHARD DAVID D ,  RATH MELISSA K

IPC: C11D3/43

CPC classification number: C11D11/0047 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/43 ,  C11D7/265 ,  C11D7/5013 ,  C11D7/5022

Abstract: A thick film photoresist and/or residue removal composition and process for removing thick film photoresist and/or post-ash and post-etch residue from a microelectronic assembly having same thereon. The removal composition includes at least one organic acid, at least one organic solvent, and water. The composition achieves at least partial removal of thick film photoresist and residue from the surface of the microelectronic assembly with minimal etching of metal species on the assembly and without damage to low-k dielectric materials employed in the assembly architecture.

Abstract translation: 厚膜光致抗蚀剂和/或残留物去除组合物和方法，用于从其上具有相同材料的微电子组件去除厚膜光致抗蚀剂和/或后灰化和蚀刻后残留物。 去除组合物包含至少一种有机酸，至少一种有机溶剂和水。 该组合物实现了至少部分从微电子组件的表面除去厚膜光致抗蚀剂和残留物，同时对组件体系上的金属物质的蚀刻最少，并且不会损害组装体系结构中采用的低k介电材料。

公开(公告)号：WO2006138235A3

公开(公告)日：2007-04-19

申请号：PCT/US2006022859

申请日：2006-06-13

Applicant: ADVANCED TECH MATERIALS ,  BERNHARD DAVID D ,  WANG WEIHUA ,  BAUM THOMAS H

Inventor： BERNHARD DAVID D ,  WANG WEIHUA ,  BAUM THOMAS H

IPC: H01L21/00 ,  C03B33/00 ,  H01L21/02 ,  H01L21/64

CPC classification number: H01L21/32134 ,  C23F1/26 ,  C23F1/28

Abstract: An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal nitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate.

Abstract translation: 在互补金属氧化物半导体（CMOS）晶体管制造中通过快速热退火形成金属硅化物之后，可用于去除诸如镍，钴，钛，钨及其合金的金属的含水金属蚀刻组合物。 含水金属蚀刻组合物还可用于选择性去除金属硅化物和/或金属氮化物用于晶片再加工。 在一种配方中，含水金属蚀刻组合物含有草酸和含氯化合物，并且在其它配方中，该组合物含有氧化剂，例如过氧化氢和氟化物源，例如硼氟酸。 另一具体制剂中的组合物含有硼氟酸和硼酸，用于有效地蚀刻镍，钴，钛，钨，金属合金，金属硅化物和金属氮化物，而不侵蚀电介质和基底。

公开(公告)号：WO2007044447A3

公开(公告)日：2009-04-16

申请号：PCT/US2006038931

申请日：2006-10-04

Applicant: ADVANCED TECH MATERIALS ,  RAJARATNAM MARTHA ,  BERNHARD DAVID D ,  MINSEK DAVID W

Inventor： RAJARATNAM MARTHA ,  BERNHARD DAVID D ,  MINSEK DAVID W

IPC: H01L21/3205 ,  H01L21/336 ,  H01L21/8238

CPC classification number: H01L21/31111 ,  H01L21/28052 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

Abstract: A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture.

Abstract translation: 一种栅间隔氧化物材料去除组合物和用于从其上具有其的微电子器件至少部分去除栅极间隔物氧化物材料的工艺。 无水去除组合物包括至少一种有机溶剂，至少一种螯合剂，氟化氟化物：氟化氢成分和任选的至少一种钝化剂。 该组合物通过在栅电极结构中使用的金属硅化物互连材料物质的最小蚀刻，实现了在微电子器件的表面上从栅电极附近相对于多晶硅和氮化硅选择性去除栅间隔物氧化物材料。

公开(公告)号：WO2006110645A3

公开(公告)日：2007-03-01

申请号：PCT/US2006013306

申请日：2006-04-10

Applicant: ADVANCED TECH MATERIALS ,  MINSEK DAVID W ,  BERNHARD DAVID D ,  BAUM THOMAS H

Inventor： MINSEK DAVID W ,  BERNHARD DAVID D ,  BAUM THOMAS H

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/28 ,  C11D7/36 ,  C11D7/50 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/426 ,  H01L21/31133

Abstract: A liquid removal composition and process for removing post-ash residue, post-etch residue and/or bottom anti-reflective coating (BARC) residue from a microelectronic device having said residue thereon. The liquid removal composition includes a fluoride source and an amphiphilic solvent. The composition achieves high-efficiency removal of the residue material from the microelectronic device without damaging metal species or low-k dielectric materials employed in the microelectronic device architecture.

Abstract translation: 一种液体去除组合物和用于从其上具有残留物的微电子器件除去灰分后残余物，蚀刻后残留物和/或底部抗反射涂层（BARC）残留物的方法。 液体去除组合物包括氟化物源和两亲溶剂。 该组合物可实现从微电子器件高效除去残余物质，而不会损坏微电子器件结构中使用的金属物质或低k电介质材料。

公开(公告)号：AU2003297347A1

公开(公告)日：2004-07-22

申请号：AU2003297347

申请日：2003-12-17

Applicant: ADVANCED TECH MATERIALS

Inventor： MINSEK DAVID W ,  MURPHY MELISSA K ,  BERNHARD DAVID D ,  BAUM THOMAS H

IPC: C11D7/06 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

公开(公告)号：CA2550522A1

公开(公告)日：2004-07-15

申请号：CA2550522

申请日：2003-12-17

Applicant: ADVANCED TECH MATERIALS

Inventor： MINSEK DAVID W ,  BAUM THOMAS H ,  BERNHARD DAVID D ,  RATH MELISSA K

IPC: G03C5/00 ,  B08B3/00 ,  C11D7/06 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311

Abstract: Disclosed herein is a composition and method for semiconductor processing. I n one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provide d. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

公开(公告)号：SG164385A1

公开(公告)日：2010-09-29

申请号：SG2010053486

申请日：2006-01-09

Applicant: ADVANCED TECH MATERIALS

Inventor： MINSEK DAVID W ,  WANG WEIHUA ,  BERNHARD DAVID D ,  BAUM THOMAS H ,  RATH MELISSA K

Abstract: An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high- efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture. FIG. NONE

公开(公告)号：CA2599727A1

公开(公告)日：2005-09-15

申请号：CA2599727

申请日：2005-03-02

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  BERNHARD DAVID D ,  RATH MELISSA K ,  MINSEK DAVID

IPC: G03F7/32 ,  A61K31/44 ,  C11D1/62

Abstract: A composition and process for removing photoresist and/or sacrificial anti- reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or c o- solvent species, to achieve high-efficiency removal of photoresist and/or SA RC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in th e semiconductor architecture.