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1.发明申请METALS COMPATIBLE PHOTORESIST AND/OR SACRIFICIAL ANTIREFLECTIVE COATING REMOVAL COMPOSITION 审中-公开与金属相容的光致抗蚀剂和/或牺牲型抗反射涂层去除组合物
公开(公告)号：WO2007047365A2
公开(公告)日：2007-04-26
申请号：PCT/US2006039888
申请日：2006-10-12
Applicant: ADVANCED TECH MATERIALS , RATH MELISSA K , BERNHARD DAVID D , BAUM THOMAS H , JIANG PING , ZHOU RENJIE , KORZENSKI MICHAEL B
Inventor： RATH MELISSA K , BERNHARD DAVID D , BAUM THOMAS H , JIANG PING , ZHOU RENJIE , KORZENSKI MICHAEL B
IPC: C11D3/30
CPC classification number: C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
Abstract translation: 一种液体去除组合物和用于从其上具有相同材料的微电子器件去除光致抗蚀剂和/或牺牲性抗反射涂层（SARC）材料的方法。 液体去除组合物包含至少一种有机季碱和至少一种表面相互作用增强添加剂。 该组合物在集成电路制造过程中至少部分去除光致抗蚀剂和/或SARC材料，同时微电子器件上的金属物质如铜和钴的蚀刻最少，并且不损伤微电子中使用的低k介电材料 设备架构。
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公开(公告)号：WO2007027522A2
公开(公告)日：2007-03-08
申请号：PCT/US2006033237
申请日：2006-08-25
Applicant: ADVANCED TECH MATERIALS , BERNHARD DAVID D , RATH MELISSA K
Inventor： BERNHARD DAVID D , RATH MELISSA K
IPC: C11D3/43
CPC classification number: C11D11/0047 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/43 , C11D7/265 , C11D7/5013 , C11D7/5022
Abstract: A thick film photoresist and/or residue removal composition and process for removing thick film photoresist and/or post-ash and post-etch residue from a microelectronic assembly having same thereon. The removal composition includes at least one organic acid, at least one organic solvent, and water. The composition achieves at least partial removal of thick film photoresist and residue from the surface of the microelectronic assembly with minimal etching of metal species on the assembly and without damage to low-k dielectric materials employed in the assembly architecture.
Abstract translation: 厚膜光致抗蚀剂和/或残留物去除组合物和方法，用于从其上具有相同材料的微电子组件去除厚膜光致抗蚀剂和/或后灰化和蚀刻后残留物。 去除组合物包含至少一种有机酸，至少一种有机溶剂和水。 该组合物实现了至少部分从微电子组件的表面除去厚膜光致抗蚀剂和残留物，同时对组件体系上的金属物质的蚀刻最少，并且不会损害组装体系结构中采用的低k介电材料。
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公开(公告)号：CA2550522A1
公开(公告)日：2004-07-15
申请号：CA2550522
申请日：2003-12-17
Applicant: ADVANCED TECH MATERIALS
Inventor： MINSEK DAVID W , BAUM THOMAS H , BERNHARD DAVID D , RATH MELISSA K
IPC: G03C5/00 , B08B3/00 , C11D7/06 , C11D7/32 , C11D7/50 , C11D11/00 , G03F7/42 , H01L21/306 , H01L21/311
Abstract: Disclosed herein is a composition and method for semiconductor processing. I n one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provide d. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
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4.发明专利
公开(公告)号：SG164385A1
公开(公告)日：2010-09-29
申请号：SG2010053486
申请日：2006-01-09
Applicant: ADVANCED TECH MATERIALS
Inventor： MINSEK DAVID W , WANG WEIHUA , BERNHARD DAVID D , BAUM THOMAS H , RATH MELISSA K
Abstract: An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high- efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture. FIG. NONE
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公开(公告)号：CA2599727A1
公开(公告)日：2005-09-15
申请号：CA2599727
申请日：2005-03-02
Applicant: ADVANCED TECH MATERIALS
Inventor： BAUM THOMAS H , KORZENSKI MICHAEL B , BERNHARD DAVID D , RATH MELISSA K , MINSEK DAVID
Abstract: A composition and process for removing photoresist and/or sacrificial anti- reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or c o- solvent species, to achieve high-efficiency removal of photoresist and/or SA RC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in th e semiconductor architecture.
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Patent Agency Ranking6.发明专利
公开(公告)号：SG162757A1
公开(公告)日：2010-07-29
申请号：SG2010039592
申请日：2006-06-07
Applicant: ADVANCED TECH MATERIALS
Inventor： RATH MELISSA K , BERNHARD DAVID D , MINSEK DAVID W , BAUM THOMAS H
Abstract: A liquid removal composition and process for removing sacrificial anti reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
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公开(公告)号：EP1583997A4
公开(公告)日：2010-03-24
申请号：EP03814181
申请日：2003-12-17
Applicant: ADVANCED TECH MATERIALS
Inventor： MINSEK DAVID W , RATH MELISSA K , BERNHARD DAVID D , BAUM THOMAS H
IPC: G03C5/00 , B08B3/00 , C11D7/06 , C11D7/32 , C11D7/50 , C11D11/00 , G03F7/42 , H01L21/306 , H01L21/311
CPC classification number: C11D3/30 , C11D1/72 , C11D3/044 , C11D3/3947 , C11D3/3955 , C11D3/3956 , C11D3/43 , C11D7/06 , C11D7/3209 , C11D7/3281 , C11D7/34 , C11D7/50 , C11D11/0047 , C23G1/20 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/0206 , H01L21/31116 , H01L21/31133 , Y10S438/906
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8.发明公开METALS COMPATIBLE PHOTORESIST AND/OR SACRIFICIAL ANTIREFLECTIVE COATING REMOVAL COMPOSITION 审中-公开METALS兼容光致抗蚀剂和/或牺牲防反射涂层除去组合
公开(公告)号：EP1945748A4
公开(公告)日：2009-01-07
申请号：EP06836276
申请日：2006-10-12
Applicant: ADVANCED TECH MATERIALS
Inventor： RATH MELISSA K , BERNHARD DAVID D , BAUM THOMAS H , JIANG PING , ZHOU RENJIE , KORZENSKI MICHAEL B
IPC: C11D7/50
CPC classification number: C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
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9.发明公开METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION 有权清洁和去除组合物与金属间介电兼容性ANTI REFLEX受害者涂料
公开(公告)号：EP1891482A4
公开(公告)日：2013-01-09
申请号：EP06772382
申请日：2006-06-07
Applicant: ADVANCED TECH MATERIALS
Inventor： RATH MELISSA K , BERNHARD DAVID D , MINSEK DAVID W , BAUM THOMAS H
IPC: G03F7/42
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10.发明公开COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS 审中-公开成分脱除PHOTO油漆残渣后，涂料刻蚀与抗反射
公开(公告)号：EP1844367A4
公开(公告)日：2011-08-31
申请号：EP06717549
申请日：2006-01-09
Applicant: ADVANCED TECH MATERIALS
Inventor： MINSEK DAVID W , WANG WEIHUA , BERNHARD DAVID D , BAUM THOMAS H , RATH MELISSA K
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