公开(公告)号：US20250069857A1

公开(公告)日：2025-02-27

申请号：US18946807

申请日：2024-11-13

Applicant: Applied Materials, Inc.

Inventor： Amir H. Tavakoli ,  Tony S. Kaushal ,  Peter Reimer ,  David Jorgensen

IPC: H01J37/32 ,  C04B35/10 ,  C04B35/12 ,  C04B35/14 ,  C04B35/622 ,  C23C16/40 ,  C23C16/455 ,  H01L21/67

Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.

公开(公告)号：US20240376595A1

公开(公告)日：2024-11-14

申请号：US18781101

申请日：2024-07-23

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C23C16/44 ,  C04B35/581 ,  C04B35/626 ,  C04B35/628 ,  C23C16/02 ,  C23C16/40 ,  C23C16/442 ,  C23C16/455 ,  C23C16/505 ,  H01L21/687

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

公开(公告)号：US12084763B2

公开(公告)日：2024-09-10

申请号：US17184802

申请日：2021-02-25

Applicant: Applied Materials, Inc.

Inventor： Marc Shull ,  Peter Reimer ,  Hong P. Gao ,  Chandra V. Deshpandey

IPC: C04B35/626 ,  C04B35/581 ,  C04B35/628 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/442 ,  C23C16/455 ,  C23C16/505 ,  H01L21/687

CPC classification number: C23C16/4417 ,  C04B35/581 ,  C04B35/62685 ,  C04B35/62805 ,  C04B35/6281 ,  C04B35/62815 ,  C04B35/62884 ,  C04B35/62894 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  H01L21/68757 ,  C04B2235/3225 ,  C23C16/442

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

公开(公告)号：US12018372B2

公开(公告)日：2024-06-25

申请号：US17317342

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Matthias Bauer ,  Ala Moradian ,  Manjunath Subbanna ,  Kartik Bhupendra Shah ,  Errol Antonio C. Sanchez ,  Sohrab Zokaei ,  Michael R. Rice ,  Peter Reimer

IPC: C23C16/40 ,  B01J4/00 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4558 ,  B01J4/005 ,  B01J4/008 ,  C23C16/4412 ,  C23C16/45587

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.