公开(公告)号：US20140273510A1

公开(公告)日：2014-09-18

申请号：US13829856

申请日：2013-03-14

Applicant: ASM IP HOLDING B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Willem Maes ,  Suvi Haukka ,  Eric Shero ,  Tom E. Blomberg ,  Dong Li

IPC: H01L21/02

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是硅烷或硼烷，其至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。

公开(公告)号：US12249534B2

公开(公告)日：2025-03-11

申请号：US17887646

申请日：2022-08-15

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Abhishek Mangoli ,  Harihara Krishnan Krishnamoorthy ,  Daniel Maurice ,  Julio Cesar Diaz ,  Massood Mostaghimi

IPC: H01L21/687 ,  H01L21/66 ,  H01L21/67

Abstract: A reactor system with stuck lift pin detection. The system includes a reaction chamber, a susceptor for supporting wafers in an interior space of the reaction chamber, and an elevator for raising and lowering the susceptor in the interior space. Further, the system includes a lift pin supported by and extending vertically through the susceptor to travel between an up and a down position with movements of the susceptor by the elevator, and a landing pad is provided in the system for receiving a base of the lift pin when the lift pin is in the down position. Significantly, the system also includes a sensor assembly with a sensor positioned at least partially within the interior space of the reaction chamber. An output signal of the sensor is indicative of whether the lift pin is sticking or seizing during travel through the susceptor.

公开(公告)号：US20240133033A1

公开(公告)日：2024-04-25

申请号：US18403024

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Jacqueline Wrench ,  Shuaidi Zhang ,  Arjav Prafulkumar Vashi ,  Shubham Garg ,  Todd Robert Dunn ,  Moataz Bellah Mousa ,  Jonathan Bakke ,  Ibrahim Mohamed ,  Paul Ma ,  Bo Wang ,  Eric Shero ,  Jereld Lee Winkler

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45561 ,  C23C16/52

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

公开(公告)号：US20220254628A1

公开(公告)日：2022-08-11

申请号：US17666681

申请日：2022-02-08

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Glen Wilk ,  Jereld Lee Winkler

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/46 ,  C23C16/455

Abstract: Methods for depositing boron nitride on a surface of a substrate are provided. Exemplary methods include providing a boron precursor comprising a boron-halogen compound comprising one or more of iodine and bromine to a reaction chamber and providing a nitrogen precursor comprising a substituted hydrazine compound to the reaction chamber.

公开(公告)号：US20220168787A1

公开(公告)日：2022-06-02

申请号：US17537567

申请日：2021-11-30

Applicant: ASM IP Holding B.V.

Inventor： Dinkar Nandwana ,  Allen D'Ambra ,  Dinh Tran ,  Ankit Kimtee ,  Eric Shero

IPC: B08B9/027 ,  B08B9/02 ,  B08B3/08

Abstract: Cleaning fixtures for cleaning a showerhead assembly are disclosure. The cleaning fixtures include: a fixture body incorporating three or more cavities, each cavity being separate from an adjacent cavity by a partition, and a number of channels associated with each cavity for fluidly connecting the cavities with an upper surface of the fixture body.

公开(公告)号：US20180130652A1

公开(公告)日：2018-05-10

申请号：US15861418

申请日：2018-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fred Pettinger ,  Carl White ,  Dave Marquardt ,  Sokol Ibrani ,  Eric Shero ,  Todd Dunn ,  Kyle Fondurulia ,  Mike Halpin

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01L21/02104 ,  C23C16/4409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32532

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

公开(公告)号：US09236247B2

公开(公告)日：2016-01-12

申请号：US14461995

申请日：2014-08-18

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/00 ,  H01L21/16 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane or a borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

Abstract translation: 提供了处理含金属薄膜的方法，例如包含碳化钛的薄膜，与硅烷或硼烷试剂。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。

公开(公告)号：US09167625B2

公开(公告)日：2015-10-20

申请号：US13677133

申请日：2012-11-14

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Michael Halpin ,  Jerry Winkler

IPC: H05B3/68 ,  A21B2/00 ,  H05B1/02 ,  H01L21/67

CPC classification number: H05B1/0233 ,  H01L21/67115 ,  H05B3/68

Abstract: A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member.

Abstract translation: 一种反应室，包括位于所述反应室内的基板支撑构件，所述反应室具有第一区域和第二区域，所述反应室设置在所述第二室内并且可与所述基板支撑构件一起移动，并且其中所述屏蔽件至少与 底板支撑构件的底面。

公开(公告)号：US09111749B2

公开(公告)日：2015-08-18

申请号：US14300986

申请日：2014-06-10

Applicant: ASM IP HOLDING B.V.

Inventor： Eric Shero ,  Suvi Haukka

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/321 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/02211 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y10S438/932

Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

Abstract translation: 通过使膜与包含硅烷或硼烷的处理剂接触，可以减少或防止氧对一些金属膜的负面影响。 在一些实施例中，NMOS栅叠层中的一个或多个膜在沉积期间或之后与包含硅烷或硼烷的处理剂接触。

公开(公告)号：US20150179440A1

公开(公告)日：2015-06-25

申请号：US14461995

申请日：2014-08-18

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/02

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。