公开(公告)号：US20240258102A1

公开(公告)日：2024-08-01

申请号：US18199018

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jihye Yang ,  Hongsuk Kim ,  JuHyuk Park ,  SungHa Choi ,  SangHeon Yong ,  KiHun Kim

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/0223 ,  H01L21/02252

Abstract: A substrate processing method includes providing a substrate having a gap structure into a reaction space, and supplying a silicon precursor and nitrogen reactant gas into the reaction space, and depositing a flowable silicon nitride film on the substrate to fill at least a part of the gap of the substrate, while maintaining an inside of the reaction space in a plasma state by applying radio frequency (RF) power in a pulsed mode, wherein as a duty ratio of the RF power decreases, fewer micropores are generated in the silicon nitride film in the gap.

公开(公告)号：US20240071747A1

公开(公告)日：2024-02-29

申请号：US18238020

申请日：2023-08-25

Applicant: ASM IP Holding B.V.

Inventor： SungHa Choi ,  Hongsuk Kim ,  KiHun Kim ,  SangHeon Yong ,  JuHyuk Park

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  C23C16/045

Abstract: A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the substrate through a gas supply unit on the substrate support unit, and generating a direct plasma in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor and the nitrogen-containing gas and the generating a direct plasma, and different plasma duty ratios are applied during the plurality of sub-steps.

公开(公告)号：US20240063053A1

公开(公告)日：2024-02-22

申请号：US18235013

申请日：2023-08-17

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  SungHa Choi ,  JuHyuk Park ,  KiHun Kim

IPC: H01L21/764 ,  H01J37/32 ,  H01L21/762 ,  H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  C23C16/04

CPC classification number: H01L21/764 ,  H01J37/32137 ,  H01L21/76224 ,  H01L21/02274 ,  C23C16/345 ,  C23C16/505 ,  C23C16/045 ,  H01J2237/332

Abstract: A method of processing a substrate is disclosed, the method including: providing the substrate where a gap is formed on a surface thereof to a reaction space, performing a deposition step of depositing a flowable film in the gap of the substrate while supplying a precursor and a reactant gas to the reaction space, performing a plasma treatment step to the flowable film so that the flowability of the flowable film in an upper region of the gap decreases compared to a lower region of the gap, and repeating the deposition step of depositing the flowable film and the plasma treatment step to the flowable film, to form an air-gap within the gap.

公开(公告)号：US20240063014A1

公开(公告)日：2024-02-22

申请号：US18232990

申请日：2023-08-11

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  JuHyuk Park ,  SungHa Choi ,  KiHun Kim

IPC: H01L21/02

CPC classification number: H01L21/02252 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02326

Abstract: Provided is a method of efficiently forming a dense and solid silicon oxide film on a substrate and a method of manufacturing a semiconductor device by using the same. The formation method comprises: providing a substrate to a reaction chamber; forming a flowable silicon nitride film on the substrate; converting the flowable silicon nitride film into a flowable silicon oxide film; densifying the flowable silicon oxide film; and post-treating the densified silicon oxide film with an inert gas plasma to increase a density of the silicon oxide film.