公开(公告)号：US20240258101A1

公开(公告)日：2024-08-01

申请号：US18199092

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jihye Yang ,  Hongsuk Kim ,  JuHyuk Park ,  SungHa Choi ,  SangHeon Yong ,  KiHun Kim

IPC: H01L21/02 ,  H01L23/14

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02359 ,  H01L23/14

Abstract: Disclosed is a substrate processing method comprising providing a substrate having a gap in a surface thereof into a reaction space, partially filling each of the plurality of gaps with a flowable silicon nitride film, forming a silicon oxide film partially filled in the gap by converting the silicon nitride film into the silicon oxide film, fully filling the gap, which is partially filled with the silicon oxide film, with a silicon nitride film, and forming a silicon oxide film to be fully filled in the gap, by converting the silicon nitride film into the silicon oxide film.

公开(公告)号：US20240258102A1

公开(公告)日：2024-08-01

申请号：US18199018

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jihye Yang ,  Hongsuk Kim ,  JuHyuk Park ,  SungHa Choi ,  SangHeon Yong ,  KiHun Kim

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/0223 ,  H01L21/02252

Abstract: A substrate processing method includes providing a substrate having a gap structure into a reaction space, and supplying a silicon precursor and nitrogen reactant gas into the reaction space, and depositing a flowable silicon nitride film on the substrate to fill at least a part of the gap of the substrate, while maintaining an inside of the reaction space in a plasma state by applying radio frequency (RF) power in a pulsed mode, wherein as a duty ratio of the RF power decreases, fewer micropores are generated in the silicon nitride film in the gap.

公开(公告)号：US20240071747A1

公开(公告)日：2024-02-29

申请号：US18238020

申请日：2023-08-25

Applicant: ASM IP Holding B.V.

Inventor： SungHa Choi ,  Hongsuk Kim ,  KiHun Kim ,  SangHeon Yong ,  JuHyuk Park

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  C23C16/045

Abstract: A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the substrate through a gas supply unit on the substrate support unit, and generating a direct plasma in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor and the nitrogen-containing gas and the generating a direct plasma, and different plasma duty ratios are applied during the plurality of sub-steps.