公开(公告)号：US12283479B2

公开(公告)日：2025-04-22

申请号：US17847531

申请日：2022-06-23

Applicant: ASM IP Holding B.V.

Inventor： JaeOk Ko ,  HeeSung Kang ,  JaeBin Ahn ,  SeokJae Oh ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim ,  Shinya Ueda

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32 ,  H01L21/311 ,  H01L21/768

Abstract: Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.

公开(公告)号：US11676812B2

公开(公告)日：2023-06-13

申请号：US16904166

申请日：2020-06-17

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111 ,  H01J2237/3347

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US20230142899A1

公开(公告)日：2023-05-11

申请号：US17979237

申请日：2022-11-02

Applicant: ASM IP Holding B.V.

Inventor： Shinya Ueda ,  SeokJae Oh ,  HyunGyu Jang ,  HeeSung Kang ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim

IPC: C23C16/505 ,  H01J37/32 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/505 ,  H01J37/32743 ,  H01J37/32449 ,  C23C16/345 ,  C23C16/52 ,  C23C16/45536 ,  H01J2237/3321

Abstract: A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.

公开(公告)号：US20220415650A1

公开(公告)日：2022-12-29

申请号：US17847531

申请日：2022-06-23

Applicant: ASM IP Holding B.V.

Inventor： JaeOk Ko ,  HeeSung Kang ,  JaeBin Ahn ,  SeokJae Oh ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim ,  Shinya Ueda

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/02 ,  C23C16/505 ,  C23C16/04

Abstract: Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.

公开(公告)号：US20190057857A1

公开(公告)日：2019-02-21

申请号：US16167225

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US20230323558A1

公开(公告)日：2023-10-12

申请号：US18123508

申请日：2023-03-20

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  ByeongPil Park ,  Shinya Ueda

IPC: C25D11/18 ,  C23C16/46 ,  H01J37/32

CPC classification number: C25D11/18 ,  C23C16/463 ,  H01J37/32724

Abstract: A method of manufacturing a cooling device of a substrate processing apparatus includes: providing an aluminum plate having a through hole; forming a temperature control portion by anodizing the aluminum plate; and arranging the temperature control portion below a substrate support portion, wherein the temperature control portion is arranged so that a support rod of the substrate support portion passes through the through hole.

公开(公告)号：US20200321209A1

公开(公告)日：2020-10-08

申请号：US16904166

申请日：2020-06-17

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.