公开(公告)号：US12098460B2

公开(公告)日：2024-09-24

申请号：US17153862

申请日：2021-01-20

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/4412 ,  C23C16/45561 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/3299

Abstract: A reactor system may comprise a first gas source; a second gas source; and a reaction chamber fluidly coupled to the first and second gas sources, wherein a first gas and a second may be supplied to the reaction chamber from the first and second gas sources, respectively, to achieve stability of a reaction chamber pressure. The reactor system may further comprise an exhaust line fluidly coupled to and downstream from the reaction chamber; a vent line fluidly coupled to the first and/or second gas source, and to the exhaust line, wherein the vent line bypasses the reaction chamber; a pressure monitor coupled to the vent line configured to monitor a vent line pressure within the vent line; and/or a vent line conductance control valve coupled to the vent line and configured to adjust in response to feedback from the pressure monitor.

公开(公告)号：US20220319833A1

公开(公告)日：2022-10-06

申请号：US17711998

申请日：2022-04-01

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Tomomi Takayama ,  Che Chen Hsu

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  H01J37/32

Abstract: Methods of forming structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a material overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period providing one or more of a nitrogen reactant and an oxygen reactant to the reaction chamber for a reactant pulse period, providing an inert gas to the reaction chamber for an inert gas pulse period, and providing a plasma power to form a plasma within the reaction chamber for a plasma pulse period. The inert gas can be provided during the plasma period and/or the plasma power can be pulsed to mitigate any damage to an underlying layer, while providing desired properties of the material layer.

公开(公告)号：US20200321209A1

公开(公告)日：2020-10-08

申请号：US16904166

申请日：2020-06-17

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US12100597B2

公开(公告)日：2024-09-24

申请号：US17712017

申请日：2022-04-01

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba

IPC: H01L21/308 ,  C23C16/34 ,  C23C16/455 ,  C23C16/515 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3086 ,  C23C16/345 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/515 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31122 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/3081

Abstract: Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a silicon nitride layer overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a nitrogen reactant to the reaction chamber, providing a hydrogen reactant to the reaction chamber, and providing a plasma power to form a plasma within the reaction chamber for a plasma pulse period. An etch profile of sacrificial features on the substrate can be controlled by controlling an amount of hydrogen provided to the reaction chamber and/or using other process parameters.

公开(公告)号：US11961741B2

公开(公告)日：2024-04-16

申请号：US17192865

申请日：2021-03-04

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US10720322B2

公开(公告)日：2020-07-21

申请号：US16167225

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US20210287912A1

公开(公告)日：2021-09-16

申请号：US17192865

申请日：2021-03-04

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US20210230746A1

公开(公告)日：2021-07-29

申请号：US17153862

申请日：2021-01-20

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/455

Abstract: A reactor system may comprise a first gas source; a second gas source; and a reaction chamber fluidly coupled to the first and second gas sources, wherein a first gas and a second may be supplied to the reaction chamber from the first and second gas sources, respectively, to achieve stability of a reaction chamber pressure. The reactor system may further comprise an exhaust line fluidly coupled to and downstream from the reaction chamber; a vent line fluidly coupled to the first and/or second gas source, and to the exhaust line, wherein the vent line bypasses the reaction chamber; a pressure monitor coupled to the vent line configured to monitor a vent line pressure within the vent line; and/or a vent line conductance control valve coupled to the vent line and configured to adjust in response to feedback from the pressure monitor.

公开(公告)号：US10529554B2

公开(公告)日：2020-01-07

申请号：US15592730

申请日：2017-05-11

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

公开(公告)号：US11827981B2

公开(公告)日：2023-11-28

申请号：US17498267

申请日：2021-10-11

Applicant: ASM IP Holding B.V.

Inventor： Kentaro Kojima ,  Takeru Kuwano ,  Eiichiro Shiba

IPC: C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  C23C16/56 ,  C23C16/34

CPC classification number: C23C16/509 ,  C23C16/345 ,  C23C16/56 ,  H01J37/32082 ,  H01J2237/3321

Abstract: A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cm2 the material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.