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公开(公告)号：US10241055B2
公开(公告)日：2019-03-26
申请号：US14264547
申请日：2014-04-29
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey Maria Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cedric Desire Grouwstra , Markus Gerardus Martinus Van Kraaij
Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
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12.发明授权公开(公告)号：US09946167B2
公开(公告)日：2018-04-17
申请号：US14824696
申请日：2015-08-12
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Willem Marie Julia Marcel Coene , Patrick Warnaar , Michael Kubis
CPC classification number: G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
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公开(公告)号：US20140340666A1
公开(公告)日：2014-11-20
申请号：US14357530
申请日：2012-12-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans Butler , Arno Jan Bleeker , Pieter Renaat Marie Hennus , Martinus Hendricus Henricus Hoeks , Sven Antoin Johan Hol , Harmen Klaas Van Der Schoot , Bernardus Antonius Slaghekke , Patricius Aloysius Jacobus Tinnemans , Marc Wilhelmus Maria Van Der Wijst , Koen Jacobus Johannes Maria Zaal , Theodorus Petrus Maria Cadee , Ruud Antonius Catharina Maria Beerens , Olof Martinus Josephus Fischer , Wilhelmus Henricus Theodorus Maria Aangenent , Niels Johannes Maria Bosch
IPC: G03F7/20
CPC classification number: G03F7/70258 , G03F7/70275 , G03F7/70366 , G03F7/70391 , G03F7/704 , G03F7/70558 , G03F7/70816 , G03F7/709
Abstract: An exposure apparatus including a projection system configured to project a plurality of radiation beams onto a target; a movable frame that is at least rotatable around an axis; and an actuator system configured to displace the movable frame to an axis away from an axis corresponding to the geometric center of the movable frame and to cause the frame to rotate around an axis through the center of mass of the frame.
Abstract translation: 一种曝光装置，包括被配置为将多个辐射束投影到目标上的投影系统; 至少可绕轴旋转的可移动框架; 以及致动器系统，其构造成将可移动框架移动到远离与可移动框架的几何中心对应的轴线的轴线上，并使框架围绕通过框架的质心的轴线旋转。
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14.发明申请LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD AND COMPUTER PROGRAM 有权LITHOGRAPHIC设备，设备制造方法和计算机程序公开(公告)号：US20140285785A1
公开(公告)日：2014-09-25
申请号：US14350327
申请日：2012-11-06
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
CPC classification number: G03F7/70558 , G03F7/70191 , G03F7/70275 , G03F7/70291 , G03F7/70308 , G03F7/70391 , G03F7/705 , G03F7/70508 , G03F7/70525 , G03F9/7026
Abstract: The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.
Abstract translation: 参考位置的位置和/或旋转来确定本发明涉及用于照射目标上的多个位置的多个光束的强度值。 还提供了相关联的光刻或曝光装置，相关的装置制造方法和相关联的计算机程序。
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15.发明申请公开(公告)号：US20140176929A1
公开(公告)日：2014-06-26
申请号：US14190147
申请日：2014-02-26
Applicant: ASML Netherlands B.V.
Inventor： Kars Zeger TROOST , Arno Jan Bleeker
IPC: G03F7/20
CPC classification number: G03F7/70058 , G03F7/70275 , G03F7/70291 , G03F7/70383 , G03F7/70425
Abstract: A system and method are used to manufacture a device using at least one exposure step. Each exposure step projects a patterned beam of radiation onto a substrate. The patterned beam includes a plurality of pixels. Each pixel delivers a radiation dose no greater than a predetermined normal maximum dose to the target portion in the exposure step and/or at least one selected pixel delivers an increased radiation dose, greater than the normal maximum dose. The increased dose may be delivered to compensate for the effect of a defective element at a known position in the array on a pixel adjacent a selected pixel or compensate for underexposure of the target portion at the location of a selected pixel resulting from exposure of that location to a pixel affected by a known defective element in another exposure step.
Abstract translation: 使用系统和方法来制造使用至少一个曝光步骤的装置。 每个曝光步骤将图案化的辐射束投射到衬底上。 图案化的波束包括多个像素。 每个像素在曝光步骤中向目标部分提供不大于预定正常最大剂量的辐射剂量，和/或至少一个所选择的像素传递大于正常最大剂量的增加的辐射剂量。 可以递送增加的剂量以补偿阵列中与已选择像素相邻的像素上的已知位置处的有缺陷元件的影响，或补偿由于该位置的曝光导致的所选像素位置处的目标部分的曝光不足 涉及在另一曝光步骤中受已知缺陷元件影响的像素。
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Patent Agency Ranking
16.发明授权Method and apparatus for angular-resolved spectroscopic lithography characterization 有权用于角分辨光谱光刻特征的方法和装置公开(公告)号：US08760662B2
公开(公告)日：2014-06-24
申请号：US14011663
申请日：2013-08-27
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cédric Désiré Grouwstra , Markus Gerardus Martinus Maria Van Kraaij
IPC: G01J3/45
CPC classification number: G01N21/8806 , G03F7/70341 , G03F7/70633 , G03F7/7065 , G03F9/7034
Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
Abstract translation: 通过在高数值孔径透镜的光瞳平面中测量作为辐射的结果的角度分辨光谱从衬底反射来确定衬底的性质的装置和方法。 该属性可以是角度和波长相关的，并且可以包括TM和TE偏振辐射的强度及其相对相位差。
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公开(公告)号：US09823576B2
公开(公告)日：2017-11-21
申请号：US14165334
申请日：2014-01-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Dries Smeets , Arno Jan Bleeker , Christopher James Lee , Pieter Willem Herman De Jager , Heine Melle Mulder , Rudy Jan Maria Pellens
CPC classification number: G03F7/70191 , G03F7/70291
Abstract: A radiation modulator for a lithography apparatus, a lithography apparatus, a method of modulating radiation for use in lithography, and a device manufacturing method is disclosed. The radiation modulator for a lithography apparatus may have a plurality of waveguides supporting propagation therethough of radiation having a wavelength less than 450 nm; and a modulating section configured to individually modulate radiation propagating in each of the waveguides in order to provide a modulated plurality of output beams.
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公开(公告)号：US09568831B2
公开(公告)日：2017-02-14
申请号：US14361256
申请日：2012-12-20
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Arno Jan Bleeker
CPC classification number: G03F7/70058 , G03F7/70358 , G03F7/70366 , G03F7/70391 , G03F7/704 , G03F7/70525 , G03F7/70558
Abstract: A lithographic or exposure apparatus has a projection system and a controller. The projection system includes a stationary part and a moving part. The projection system is configured to project a plurality of radiation beams onto locations on a target. The locations are selected based on a pattern. The controller is configured to control the apparatus to operate in a first mode or a second mode. In the first mode the projection system delivers a first amount of energy to the selected locations. In the second mode the projection system delivers a second amount of energy to the selected locations. The second amount of energy is greater than the first amount of energy.
Abstract translation: 光刻或曝光装置具有投影系统和控制器。 投影系统包括固定部分和移动部分。 投影系统被配置为将多个辐射束投影到目标上的位置上。 基于模式选择位置。 控制器被配置为控制设备以第一模式或第二模式操作。 在第一模式中，投影系统向选定位置传送第一量的能量。 在第二模式中，投影系统将第二量的能量传送到所选择的位置。 第二量的能量大于第一能量。
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公开(公告)号：US09494869B2
公开(公告)日：2016-11-15
申请号：US14357530
申请日：2012-12-05
Applicant: ASML Netherlands B.V.
Inventor： Hans Butler , Arno Jan Bleeker , Pieter Renaat Maria Hennus , Martinus Hendricus Henricus Hoeks , Sven Antoin Johan Hol , Harmen Klaas Van Der Schoot , Bernardus Antonius Slaghekke , Patricius Aloysius Jacobus Tinnemans , Marc Wilhelmus Maria Van Der Wijst , Koen Jacobus Johannes Maria Zaal , Theodorus Petrus Maria Cadee , Ruud Antonius Catharina Maria Beerens , Olof Martinus Josephus Fischer , Wilhelmus Henricus Theodorus Maria Aangenent , Niels Johannes Maria Bosch
CPC classification number: G03F7/70258 , G03F7/70275 , G03F7/70366 , G03F7/70391 , G03F7/704 , G03F7/70558 , G03F7/70816 , G03F7/709
Abstract: An exposure apparatus including a projection system configured to project a plurality of radiation beams onto a target; a movable frame that is at least rotatable around an axis; and an actuator system configured to displace the movable frame to an axis away from an axis corresponding to the geometric center of the movable frame and to cause the frame to rotate around an axis through the center of mass of the frame.
Abstract translation: 一种曝光装置，包括：投影系统，被配置为将多个辐射束投影到目标上; 至少可绕轴旋转的可移动框架; 以及致动器系统，其构造成将可移动框架移动到远离与可移动框架的几何中心对应的轴线的轴线上，并使框架围绕通过框架的质心的轴线旋转。
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20.发明申请Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method 有权计量方法和检验仪器，平版印刷系统和器件制造方法公开(公告)号：US20160033877A1
公开(公告)日：2016-02-04
申请号：US14824696
申请日：2015-08-12
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde SMILDE , Arno Jan Bleeker , Willem Marie Julia Marcel Coene , Patrick Warnaar , Michael Kubis
CPC classification number: G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
Abstract translation: 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅结构小于测量光学系统的照明点和视场。 光学系统具有通向光瞳平面成像传感器的第一分支和通向基板平面成像传感器的第二分支。 空间光调制器被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。 通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。
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