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11.发明授权公开(公告)号：US09255892B2
公开(公告)日：2016-02-09
申请号：US14825765
申请日：2015-08-13
Applicant: ASML Netherlands B.V.
IPC: G01B11/00 , G01B11/14 , G03B27/32 , H01L23/544 , G01N21/95 , G03F7/20 , G01N21/47 , G02B5/18 , G03F9/00
CPC classification number: G01N21/9501 , G01N21/4738 , G01N2201/06113 , G01N2201/10 , G02B5/1823 , G02B5/1861 , G03F7/70058 , G03F7/70633 , G03F7/70683 , G03F9/70 , G03F9/7046 , G03F9/7076 , H01L23/544 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
Abstract: A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.
Abstract translation: 第二组叠加的光栅叠加在第一组叠加的光栅上。 第二组光栅具有与第一组光栅不同的周期性或不同的取向。 因此，来自第二组叠加光栅的一阶衍射图可以与来自第一组叠加光栅的一阶衍射图案区分开。
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公开(公告)号：US11092900B2
公开(公告)日：2021-08-17
申请号：US16675674
申请日：2019-11-06
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
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13.发明授权公开(公告)号：US10739687B2
公开(公告)日：2020-08-11
申请号：US16185062
申请日：2018-11-09
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Bastiaan Onne Fagginger Auer , Davit Harutyunyan , Patrick Warnaar
Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
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公开(公告)号：US10386176B2
公开(公告)日：2019-08-20
申请号：US14835504
申请日：2015-08-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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公开(公告)号：US10162272B2
公开(公告)日：2018-12-25
申请号：US15240781
申请日：2016-08-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Martin Jacobus Johan Jak , Hendrik Jan Hidde Smilde , Te-Chih Huang , Victor Emanuel Calado , Henricus Wilhelmus Maria Van Buel , Richard Johannes Franciscus Van Haren
Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.
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Patent Agency Ranking
16.发明授权公开(公告)号：US10162271B2
公开(公告)日：2018-12-25
申请号：US15115229
申请日：2014-12-30
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Bastiaan Onne Fagginger Auer , Davit Harutyunyan , Patrick Warnaar
Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
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17.发明授权公开(公告)号：US09946167B2
公开(公告)日：2018-04-17
申请号：US14824696
申请日：2015-08-12
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Arno Jan Bleeker , Willem Marie Julia Marcel Coene , Patrick Warnaar , Michael Kubis
CPC classification number: G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
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公开(公告)号：US20160061589A1
公开(公告)日：2016-03-03
申请号：US14835504
申请日：2015-08-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC: G01B11/14
CPC classification number: G01B11/14 , G03F7/70633 , G03F7/70683
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构 并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。
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公开(公告)号：US11181828B2
公开(公告)日：2021-11-23
申请号：US16601778
申请日：2019-10-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick Warnaar , Hilko Dirk Bos , Hendrik Jan Hidde Smilde , Mohammadreza Hajiahmadi , Lukasz Jerzy Macht , Karel Hendrik Wouter Van Den Bos , Sergei Sokolov , Lucas Tijn Kunneman
Abstract: Techniques for determining a value of a parameter of interest of a patterning process are described. One such technique involves obtaining a plurality of calibration data units from one or more targets in a metrology process. Each calibration data unit of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target having a structure formed using the patterning process on the substrate or on a further substrate. A value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.
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公开(公告)号：US10718604B2
公开(公告)日：2020-07-21
申请号：US16507297
申请日：2019-07-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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