中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

16 records (took 0.029 seconds)

    Method, apparatus and substrates for lithographic metrology
    1.
    发明授权
    Method, apparatus and substrates for lithographic metrology 有权

    公开(公告)号：US10042268B2

    公开(公告)日：2018-08-07

    申请号：US15038535

    申请日：2014-11-04

    Applicant: ASML Netherlands B.V.

    Inventor： Hendrik Jan Hidde Smilde ,  Arie Jeffrey Den Boef ,  Omer Abubaker Omer Adam ,  Martin Jacobus Johan Jak

    IPC: G01B11/00 ,  G03F7/20

    Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.

    Metrology method and apparatus, lithographic system and device manufacturing method
    3.
    发明授权
    Metrology method and apparatus, lithographic system and device manufacturing method 有权

    公开(公告)号：US09719945B2

    公开(公告)日：2017-08-01

    申请号：US14825751

    申请日：2015-08-13

    Applicant: ASML Netherlands B.V.

    Inventor： Hendrik Jan Hidde Smilde ,  Omer Abubaker Omer Adam

    IPC: G03B27/68 ,  G03B27/52 ,  G01N21/956 ,  G03F9/00 ,  G03F7/20

    CPC classification number: G01N21/956 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7019 ,  Y10T428/24802

    Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

    Metrology method and apparatus, lithographic system and device manufacturing method
    4.
    发明授权
    Metrology method and apparatus, lithographic system and device manufacturing method 有权
    计量方法和设备，光刻系统和器件制造方法

    公开(公告)号：US09134256B2

    公开(公告)日：2015-09-15

    申请号：US13799673

    申请日：2013-03-13

    Applicant: ASML Netherlands B.V.

    Inventor： Hendrik Jan Hidde Smilde ,  Omer Abubaker Omer Adam

    IPC: G03B27/54 ,  G03B27/32 ,  G01N21/956 ,  G03F9/00 ,  G03F7/20

    CPC classification number: G01N21/956 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7019 ,  Y10T428/24802

    Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

    Abstract translation: 使用光刻工艺在衬底（W）上形成多个靶结构（T）。 每个目标结构包括各自具有特定覆盖偏压的重叠光栅。 通过散射测量，每个光栅的不对称（A）包括由于（i）叠加偏压，（ii）光刻工艺中的覆盖误差（OV）和（iii）覆盖光栅内的底部光栅不对称引起的贡献。 对于具有三个或更多个不同重叠偏置值（例如，-d，0，+ d）的三个或更多个目标结构，获得不对称测量。 知道三种不同的叠加偏差值和叠加误差与不对称性之间的理论曲线关系，可以计算出叠加误差（OV），同时校正底​​部光栅不对称的影响。 作为示例公开了具有三种和四种不同偏差的偏置方案。 具有不同方向和偏差的光栅可以在复合目标结构中交错。

    METROLOGY METHOD, TARGET AND SUBSTRATE
    6.
    发明申请
    METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
    计量方法，目标和底物

    公开(公告)号：US20160061589A1

    公开(公告)日：2016-03-03

    申请号：US14835504

    申请日：2015-08-25

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

    IPC: G01B11/14

    CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

    Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构 并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。

    Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method
    7.
    发明申请
    Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method 有权
    计量方法与仪器，平版印刷系统和器件制造方法

    公开(公告)号：US20130258310A1

    公开(公告)日：2013-10-03

    申请号：US13799673

    申请日：2013-03-13

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Hendrik Jan Hidde SMILDE ,  Omer Abubaker Omer Adam

    IPC: G01N21/956 ,  G03F9/00

    CPC classification number: G01N21/956 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7019 ,  Y10T428/24802

    Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

    Abstract translation: 使用光刻工艺在衬底（W）上形成多个靶结构（T）。 每个目标结构包括各自具有特定覆盖偏压的重叠光栅。 通过散射测量，每个光栅的不对称（A）包括由于（i）叠加偏压，（ii）光刻工艺中的覆盖误差（OV）和（iii）覆盖光栅内的底部光栅不对称引起的贡献。 对于具有三个或更多个不同重叠偏置值（例如，-d，0，+ d）的三个或更多个目标结构，获得不对称测量。 知道三种不同的叠加偏差值和叠加误差与不对称性之间的理论曲线关系，可以计算出叠加误差（OV），同时校正底​​部光栅不对称的影响。 作为示例公开了具有三种和四种不同偏差的偏置方案。 具有不同方向和偏差的光栅可以在复合目标结构中交错。

Patent Agency Ranking