公开(公告)号：WO2021069231A1

公开(公告)日：2021-04-15

申请号：PCT/EP2020/076765

申请日：2020-09-24

Applicant: ASML NETHERLANDS B.V.

Inventor： KLUGKIST, Joost, André ,  NIKIPELOV, Andrey ,  ENGELEN, Wouter Joep ,  LIAN, Jin ,  VERMEULEN, Paul, Alexander ,  YEGEN, Halil, Gökay

IPC: G02B5/18 ,  G02B5/02 ,  G02B27/09

Abstract: A diffuser is configured to receive and transmit radiation. The diffuser comprises a scattering layer (510) configured to scatter the received radiation, the scattering layer (510) comprising a first substance and having distributed therein a plurality of voids. The first substance may be a scattering substance, or alternatively, at least one of the voids may contain the scattering substance and the first substance has a lower refractive index than the scattering substance.

公开(公告)号：WO2018202394A1

公开(公告)日：2018-11-08

申请号：PCT/EP2018/059304

申请日：2018-04-11

Applicant: ASML NETHERLANDS B.V.

Inventor： LIAN, Jin ,  PANDEY, Nitesh

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G03F7/70066 ,  G03F7/70133 ,  G03F7/70158 ,  G03F7/70341 ,  G03F7/70625

Abstract: Methods and apparatus for measuring a parameter of interest of a target structure formed on substrate are disclosed. In one arrangement, the target structure comprises a first sub-target and a second sub-target. The first sub-target comprises a first bias and the second sub-target comprises a second bias. The method comprises determining the parameter of interest using a detected or estimated reference property of radiation at a first wavelength scattered from the first sub-target and a detected or estimated reference property of radiation at a second wavelength scattered from the second sub-target. The first wavelength is different to the second wavelength.

公开(公告)号：EP3623869A1

公开(公告)日：2020-03-18

申请号：EP18194625.2

申请日：2018-09-14

Applicant: ASML Netherlands B.V.

Inventor： SOKOLOV, Sergei ,  LIAN, Jin

IPC: G03F7/20

Abstract: Disclosed method of measuring a parameter relating to a structure formed using a lithographic process, and more specifically focus or line edge roughness. The method includes measuring a structure having a dimension, e.g., a critical dimension, which is sufficiently large to enable radiation diffracted by at least one edge of said structure to be (e.g., individually) optically resolved. The method comprises obtaining an intensity metric from an image of the at least one edge and determining a value for said parameter based on the intensity metric.

公开(公告)号：EP4187321A1

公开(公告)日：2023-05-31

申请号：EP21210123.2

申请日：2021-11-24

Applicant: ASML Netherlands B.V.

Inventor： ZHOU, Zili ,  SWINKELS, Daan ,  LIAN, Jin

IPC: G03F7/20

Abstract: Disclosed is a method of measuring an overlay or focus parameter from a target and associated metrology apparatus. The method comprises configuring measurement radiation to obtain a configured measurement spectrum of said measurement radiation by: imposing an intensity weighting on individual wavelength bands of said measurement radiation such that said individual wavelength bands have an intensity according to said intensity weighting, the intensity weighting being such that a measured value for the overlay or focus parameter is at least partially corrected for the effect of target imperfections; and/or imposing a modulation on a measurement spectrum of said measurement radiation. The configured measurement radiation is used to measure the target. A value for the overlay or focus parameter is determined from scattered radiation resultant from measurement of the target.

公开(公告)号：EP3388896A1

公开(公告)日：2018-10-17

申请号：EP17166691.0

申请日：2017-04-14

Applicant: ASML Netherlands B.V.

Inventor： PANDEY, Nitesh ,  LIAN, Jin ,  SAMEE-UR-REHMAN,

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70616

Abstract: Methods and apparatus for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method comprises obtaining data from a first measurement process. The first measurement process comprises individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process comprises illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.