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公开(公告)号：US11705252B2
公开(公告)日：2023-07-18
申请号：US17403849
申请日：2021-08-16
Applicant: ASML Netherlands B.V.
CPC classification number: G21K5/04 , G21K1/02 , H01J37/12 , H01J37/16 , H01J37/3007 , H01J37/3177 , H01J2237/002 , H01J2237/024 , H01J2237/0213 , H01J2237/0216 , H01J2237/0262 , H01J2237/032 , H01J2237/1207 , H01J2237/1215 , H01J2237/16 , H01J2237/1825 , H01J2237/30472
Abstract: The disclosure relates to an electron-optical module of an electron-optical apparatus. The electron-optical module comprises a vacuum chamber, a high voltage shielding arrangement located within the vacuum chamber, and an aperture array configured to form a plurality of beamlets from an electron beam and located within the high voltage shielding arrangement. Wherein the electron-optical module can be configured to be removable from the electron-optical apparatus.
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公开(公告)号：US20200219806A1
公开(公告)日：2020-07-09
申请号：US16827638
申请日：2020-03-23
Applicant: ASML Netherlands B.V.
IPC: H01L23/528 , H01L21/768 , G06F30/39 , G06F30/394 , G03F7/20 , H01L21/263 , H01L25/065 , H01L27/02 , H01L29/06
Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.
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公开(公告)号：US10692696B2
公开(公告)日：2020-06-23
申请号：US14287238
申请日：2014-05-27
Applicant: ASML Netherlands B.V.
Inventor： Teunis Van De Peut , Marco Jan-Jaco Wieland
IPC: H01J37/302 , H01J37/317 , H01J37/04 , H01J37/30 , G06T1/20 , B82Y10/00 , B82Y40/00 , G03F7/20 , G06T1/60 , H04N1/405
Abstract: A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.
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公开(公告)号：US10600733B2
公开(公告)日：2020-03-24
申请号：US16572592
申请日：2019-09-16
Applicant: ASML Netherlands B.V.
IPC: H01L25/00 , H01L23/528 , G06F17/50 , H01L21/768 , G03F7/20 , H01L25/065 , H01L27/02 , H01L29/06 , H01L21/263 , H01L27/06
Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.
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Patent Agency Ranking
公开(公告)号：US12125671B2
公开(公告)日：2024-10-22
申请号：US17778036
申请日：2020-11-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Stijn Wilem Herman Karel Steenbrink , Marco Jan-Jaco Wieland , Albertus Victor Gerardus Mangnus
IPC: H01J37/317 , H01J37/141 , H01J37/147 , H01J37/28
CPC classification number: H01J37/3177 , H01J37/141 , H01J37/1474 , H01J37/28 , H01J2237/0453 , H01J2237/2817
Abstract: A multi-source illumination apparatus for illuminating a sample with charged particles, wherein beams, from a plurality of sources, are arranged such that a beam from at least one source intersects, at a plane of a condenser lens, with at least part of one other beam from a different one of the plurality of sources. The condenser lens is configured to separately collimate the received beams from each source. A manipulator array arrangement is configured to manipulate the collimated beams to generate one or more beams, in a single column, that include charged particles from the plurality of sources. The manipulator array arrangement includes a multi-beam generator configured to receive the plurality of substantially parallel substantially collimated beams generated by the deflector array, and generate a multibeam in dependence on the received plurality of substantially parallel substantially collimated beams, wherein the multi-beam includes a plurality of substantially collimated sub-beams.
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16.发明授权公开(公告)号：US11821859B2
公开(公告)日：2023-11-21
申请号：US17559950
申请日：2021-12-22
Applicant: ASML Netherlands B.V.
IPC: G01N23/2251 , G01N23/203 , H01J37/10 , H01J37/244
CPC classification number: G01N23/2251 , G01N23/203 , H01J37/10 , H01J37/244
Abstract: The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.
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公开(公告)号：US11501952B2
公开(公告)日：2022-11-15
申请号：US16805509
申请日：2020-02-28
Applicant: ASML Netherlands B.V.
IPC: H01J37/31 , H01L37/04 , H01L27/11 , H01J37/317 , H01J37/04 , H01L27/112
Abstract: A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.
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公开(公告)号：US11094426B2
公开(公告)日：2021-08-17
申请号：US16796849
申请日：2020-02-20
Applicant: ASML Netherlands B.V.
Abstract: The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.
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公开(公告)号：US20200013712A1
公开(公告)日：2020-01-09
申请号：US16572592
申请日：2019-09-16
Applicant: ASML Netherlands B.V.
IPC: H01L23/528 , G06F17/50 , H01L21/768 , G03F7/20 , H01L21/263 , H01L25/065 , H01L27/02 , H01L29/06
Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.
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