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公开(公告)号：US11348756B2
公开(公告)日：2022-05-31
申请号：US15985763
申请日：2018-05-22
Applicant: ASML Netherlands B.V.
IPC: H01J37/153 , H01J37/12 , H01J37/09 , H01J37/065 , H01J37/317 , H01J37/02
Abstract: A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.
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公开(公告)号：USRE48046E1
公开(公告)日：2020-06-09
申请号：US14469544
申请日：2014-08-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter Kruit , Erwin Slot , Tijs Frans Teepen , Marco Jan-Jaco Wieland , Stijn Willem Herman Karel Steenbrink
IPC: H01J3/00 , H01J37/304 , B82Y10/00 , H01J37/317 , B82Y40/00
Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
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公开(公告)号：US10586625B2
公开(公告)日：2020-03-10
申请号：US15493159
申请日：2017-04-21
Applicant: ASML Netherlands B.V.
IPC: H01J37/153 , G21K5/04 , H01J37/30 , G21K1/02 , H01J37/317 , H01J37/16 , H01J37/12
Abstract: The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.
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公开(公告)号：US10418324B2
公开(公告)日：2019-09-17
申请号：US15389593
申请日：2016-12-23
Applicant: ASML Netherlands B.V.
IPC: H01L25/00 , H01L23/528 , G03F7/20 , G06F17/50 , H01L21/263 , H01L25/065 , H01L27/02 , H01L29/06 , H01L21/768 , H01L27/06
Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.
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公开(公告)号：USRE49602E1
公开(公告)日：2023-08-08
申请号：US16896953
申请日：2020-09-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter Kruit , Erwin Slot , Tijs Frans Teepen , Marco Jan-Jaco Wieland , Stijn Willem Herman Karel Steenbrink
IPC: H01J3/00 , H01J37/317 , B82Y10/00 , B82Y40/00 , H01J37/304
CPC classification number: H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2443 , H01J2237/2446 , H01J2237/30433 , H01J2237/31757
Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which
the charged particle beams are converted into light beams by using a converter element,
using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams,
electronically reading out resulting signals from said detectors after exposure thereof by said light beams,
utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and
electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.-
Patent Agency Ranking
公开(公告)号：US11152302B2
公开(公告)日：2021-10-19
申请号：US16827638
申请日：2020-03-23
Applicant: ASML Netherlands B.V.
IPC: H01L23/528 , H01L21/768 , G06F30/39 , G06F30/394 , G03F7/20 , H01L21/263 , H01L25/065 , H01L27/02 , H01L29/06 , H01L27/06
Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.
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公开(公告)号：US11961627B2
公开(公告)日：2024-04-16
申请号：US18326935
申请日：2023-05-31
Applicant: ASML Netherlands B.V.
CPC classification number: G21K5/04 , G21K1/02 , H01J37/12 , H01J37/16 , H01J37/3007 , H01J37/3177 , H01J2237/002 , H01J2237/0213 , H01J2237/0216 , H01J2237/024 , H01J2237/0262 , H01J2237/032 , H01J2237/1207 , H01J2237/1215 , H01J2237/16 , H01J2237/1825 , H01J2237/30472
Abstract: The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.
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公开(公告)号：USRE49725E1
公开(公告)日：2023-11-14
申请号：US17025997
申请日：2020-09-18
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan De Jong , Marco Jan-Jaco Wieland
IPC: G03F7/20 , H01L21/687 , H01L21/683 , G03F7/00 , H01L21/67 , H01L21/677
CPC classification number: G03F7/707 , H01L21/6776 , H01L21/67173 , H01L21/67706 , H01L21/67724 , H01L21/67748 , H01L21/67778 , H01L21/683 , H01L21/687 , H01L21/6838 , H01L21/6875 , H01L21/68707 , H01L21/68742 , H01L21/68785 , Y10T29/49815 , Y10T29/49998 , Y10T29/53
Abstract: The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.
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公开(公告)号：US11984295B2
公开(公告)日：2024-05-14
申请号：US17790713
申请日：2020-12-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Marco Jan-Jaco Wieland
IPC: H01J37/317 , H01J37/12 , H01J37/147 , H01J37/153 , H01J37/20 , H01J37/244 , H01J37/26 , H01J37/28
CPC classification number: H01J37/3177 , H01J37/12 , H01J37/1474 , H01J37/153 , H01J37/20 , H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/0453 , H01J2237/1532 , H01J2237/2817
Abstract: A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.
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公开(公告)号：US11798783B2
公开(公告)日：2023-10-24
申请号：US17133821
申请日：2020-12-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Marco Jan-Jaco Wieland
IPC: H01J37/317 , H01J37/147 , H01J37/20 , H01J37/12 , H01J37/244 , H01J37/26 , H01J37/28 , H01J37/153
CPC classification number: H01J37/3177 , H01J37/12 , H01J37/1474 , H01J37/153 , H01J37/20 , H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/0453 , H01J2237/1532 , H01J2237/2817
Abstract: A charged particle assessment tool includes: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes adjacent respective ones of the beam apertures and configured to capture charged particles emitted from the sample.
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