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    METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM
    11.
    发明申请
    METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM 有权
    确定对准标记的有效性以纠正重叠的方法，以及一个平面设备和叠加测量系统的组合

    公开(公告)号：US20150146188A1

    公开(公告)日：2015-05-28

    申请号：US14403577

    申请日：2013-04-23

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Irina Lyulina ,  Franciscus Godefridus Casper Bijnen ,  Remi Daniel Marie Edart ,  Antoine Gaston Marie Kiers ,  Michael Kubis

    IPC: G03F7/20 ,  G01B11/14

    CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

    Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

    Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

    Metrology Method and Apparatus, and Device Manufacturing Method
    12.
    发明申请
    Metrology Method and Apparatus, and Device Manufacturing Method 有权
    计量方法与装置及装置制造方法

    公开(公告)号：US20130100427A1

    公开(公告)日：2013-04-25

    申请号：US13628697

    申请日：2012-09-27

    Applicant: ASML Netherlands B.V.

    Inventor： Armand Eugene Albert KOOLEN ,  Henricus Petrus Maria Pellemans ,  Maurits Van Der Schaar ,  Peter Clement Paul Vanoppen ,  Michael Kubis

    IPC: G03B27/54 ,  G01N21/47

    CPC classification number: G03F1/42 ,  G01B9/04 ,  G01N21/47 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/70 ,  G03F9/7069 ,  G03F9/7088

    Abstract: An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.

    Abstract translation: 一种方法用于估计和校正覆盖变化作为每个测量的偏移函数。 形成在衬底上的靶包括周期性光栅。 在衬底上用圆形点照射衬底，其尺寸大于每个光栅。 在暗场散射仪中检测由每个光栅散射的辐射，以获得测量信号。 测量信号用于计算叠加。 确定覆盖层与照明点中位置的函数关系（斜率）。 可以计算在诸如照明点中心的标称位置处的覆盖物的估计值，以根据目标在照明点中的位置的函数来校正覆盖物的变化。 这补偿了晶片台移动中的位置误差的影响，以及目标在照明点中产生的非居中位置。

    Determining Edge Roughness Parameters
    16.
    发明申请
    Determining Edge Roughness Parameters 审中-公开

    公开(公告)号：US20180364036A1

    公开(公告)日：2018-12-20

    申请号：US15988681

    申请日：2018-05-24

    Applicant: ASML Netherlands B.V.

    Inventor： Martin Jacobus Johan JAK ,  Richard Quintanilha ,  Arie Jeffrey Den Boef ,  Michael Kubis

    IPC: G01B11/30 ,  G01B15/08 ,  G03F7/20

    Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth/pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

    Substrate and patterning device for use in metrology, metrology method and device manufacturing method
    17.
    发明授权
    Substrate and patterning device for use in metrology, metrology method and device manufacturing method 有权
    用于计量，计量方法和器件制造方法的基板和图案形成装置

    公开(公告)号：US09331022B2

    公开(公告)日：2016-05-03

    申请号：US14261879

    申请日：2014-04-25

    Applicant: ASML Netherlands B.V.

    Inventor： Maurits Van Der Schaar ,  Patrick Warnaar ,  Kaustuve Bhattacharyya ,  Hendrik Jan Hidde Smilde ,  Michael Kubis

    IPC: H01L23/58 ,  G03F9/00 ,  H01L23/544 ,  G03F7/20

    CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

    Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品功能和计量目标。 测量目标包括大目标和小目标，用于测量覆盖。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线范围内，而小目标则分布在产品区域内。

    Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method
    19.
    发明申请
    Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method 有权
    用于计量，计量方法和器件制造方法的基板和图案化装置

    公开(公告)号：US20140233031A1

    公开(公告)日：2014-08-21

    申请号：US14261879

    申请日：2014-04-25

    Applicant: ASML Netherlands B.V.

    Inventor： Maurits VAN DER SCHAAR ,  Patric Warnaar ,  Kaustuve Bhattacharyya ,  Hendrik Jan Hidde Smilde ,  Michael Kubis

    IPC: G01B11/14 ,  G03F7/20

    CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

    Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品功能和计量目标。 测量目标包括大目标和小目标，用于测量覆盖。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标位置相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线范围内，而小目标则分布在产品区域内。

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