公开(公告)号：JP2004207732A

公开(公告)日：2004-07-22

申请号：JP2003423526

申请日：2003-12-19

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  SHINDE SHYAM

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/301 ,  H01L23/544

CPC classification number: G03F7/70425 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a device, where a circuit structure is exposed with improved precision on one side of a substrate positioned for a marker of the other side, when the substrate(e.g., resist-covered wafer) is bonded on a carrier wafer.
SOLUTION: In manufacturing the device on the substrate having first and second surfaces, a reverse alignment marker is etched up to a depth of 10 μm on the first surface of the substrate, and the substrate is reversed and is bonded on the carrier wafer, then the reverse alignment marker is lapped or polished up to a thickness of 10 μm, thereby the reverse alignment marker becomes visible as a normal alignment marker. The reverse alignment marker can include the normal and reverse overlaid markers.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：DE60322331D1

公开(公告)日：2008-09-04

申请号：DE60322331

申请日：2003-12-18

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: G01B11/00 ,  G03F9/00 ,  H01L21/027

Abstract: A method according to one embodiment of the invention may be used in determining relative positions of developed patterns on a substrate (exposed e.g. using the step mode). Such a method uses reference marks which are located within or even superimposed on device patterns. Also disclosed is a mask of a lithographic projection apparatus including reference marks that may be used in such a method.

公开(公告)号：DE60323051D1

公开(公告)日：2008-10-02

申请号：DE60323051

申请日：2003-12-19

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  SHINDE SHYAM

IPC: G03F9/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/301 ,  H01L23/544

Abstract: A device manufacturing method capable of imaging structures on both sides of a substrate, is presented herein. One embodiment of the present invention comprises a device manufacturing method that etches reversed alignment markers on a first side of a substrate to a depth of 10 mum, the substrate is flipped over, and bonded to a carrier wafer and then lapped or ground to a thickness of 10 mum to reveal the reversed alignment markers as normal alignment markers. The reversed alignment markers may comprise normal alignment patterns overlaid with mirror imaged alignment patterns.

公开(公告)号：DE602004011458T2

公开(公告)日：2009-01-15

申请号：DE602004011458

申请日：2004-12-15

Applicant: ASML NETHERLANDS BV

Inventor： CONSOLINI JOSEPH J ,  BEST KEITH FRANK ,  FRIZ ALEXANDER

IPC: G01B11/00 ,  G03F9/00 ,  G03F7/20 ,  H01L21/027

Abstract: In a method of measurement according to one embodiment of the invention, a relative position of a temporary alignment mark on one side of a substrate and an alignment mark on the other side of the substrate is determined, and the temporary alignment mark is removed. Before removal of the temporary alignment mark, a relative position of that mark and another mark on the same side of the substrate may be determined. The temporary alignment mark may be formed in, e.g., an oxide layer.

公开(公告)号：DE602005008693D1

公开(公告)日：2008-09-18

申请号：DE602005008693

申请日：2005-12-16

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: H01L23/544 ,  H01L21/58 ,  H01L21/66

Abstract: In a method for measuring the bonding quality of bonded substrates, such as bonded SOI wafers, a plurality of marks are created at a first side of a top substrate after, or before, the bonding of the top substrate onto a bottom substrate. Then, the positions of the plurality of marks are measured using a metrology tool. Next, for each of the marks, a difference between a measured position and an expected position is calculated. These differences can be used to determine delamination between the top substrate and the bottom substrate. By displaying a vector field representing the differences, and by not showing vectors that exceed a certain threshold, the delamination areas can be made visible.

公开(公告)号：SG142129A1

公开(公告)日：2008-05-28

申请号：SG2003065968

申请日：2003-11-06

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: G03F9/00 ,  G03C5/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027 ,  H01L23/544

Abstract: Device Manufacturing Method and Device Manufactured Thereby A device manufacturing method comprising the steps of providing a first substrate having first and second surfaces; patterning said first surface of said substrate with at least one reversed alignment marker; providing a protective layer over said alignment marker(s); bonding said first surface of said first substrate to a second substrate; locally etching said first substrate as far as said protective layer to form a trench around the or each reversed alignment marker; and forming at least one patterned layer on said second surface using a lithographic projection apparatus having a front-to- backside alignment system whilst aligning said substrate to the alignment markers revealed in the or each trench.

公开(公告)号：DE602004011458D1

公开(公告)日：2008-03-13

申请号：DE602004011458

申请日：2004-12-15

Applicant: ASML NETHERLANDS BV

Inventor： CONSOLINI JOSEPH J ,  BEST KEITH FRANK ,  FRIZ ALEXANDER

IPC: G01B11/00 ,  G03F9/00 ,  G03F7/20 ,  H01L21/027

Abstract: In a method of measurement according to one embodiment of the invention, a relative position of a temporary alignment mark on one side of a substrate and an alignment mark on the other side of the substrate is determined, and the temporary alignment mark is removed. Before removal of the temporary alignment mark, a relative position of that mark and another mark on the same side of the substrate may be determined. The temporary alignment mark may be formed in, e.g., an oxide layer.

公开(公告)号：NL1036308A1

公开(公告)日：2009-06-22

申请号：NL1036308

申请日：2008-12-11

Applicant: ASML NETHERLANDS BV

Inventor： FONG ALEX ,  BUEL HENRICUS WILHELMUS MARIA ,  CONSOLINI JOSEPH J ,  MOOSDIJK MICHAEL JOSEPHUS EVERT ,  ROBLES MICHAEL CHARLES

IPC: G03F9/00 ,  H01L21/68 ,  H01L23/544

公开(公告)号：SG123589A1

公开(公告)日：2006-07-26

申请号：SG200307556

申请日：2003-12-18

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: G01B11/00 ,  G03F9/00 ,  H01L21/027

Abstract: A method according to one embodiment of the invention may be used in determining relative positions of developed patterns on a substrate (exposed e.g. using the step mode). Such a method uses reference marks which are located within or even superimposed on device patterns. Also disclosed is a mask of a lithographic projection apparatus including reference marks that may be used in such a method.

公开(公告)号：SG121844A1

公开(公告)日：2006-05-26

申请号：SG200307555

申请日：2003-12-18

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  SHINDE SHYAM

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/301 ,  H01L23/544

Abstract: A device manufacturing method capable of imaging structures on both sides of a substrate, is presented herein. One embodiment of the present invention comprises a device manufacturing method that etches reversed alignment markers on a first side of a substrate to a depth of 10 mum, the substrate is flipped over, and bonded to a carrier wafer and then lapped or ground to a thickness of 10 mum to reveal the reversed alignment markers as normal alignment markers. The reversed alignment markers may comprise normal alignment patterns overlaid with mirror imaged alignment patterns.