公开(公告)号：WO2018202388A1

公开(公告)日：2018-11-08

申请号：PCT/EP2018/059183

申请日：2018-04-10

Applicant: ASML NETHERLANDS B.V.

Inventor： JAVAHERI, Narjes ,  HAJIAHMADI, Mohammadreza ,  ZWIER, Olger, Victor ,  SANGUINETTI, Gonzalo, Roberto

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G01M11/00 ,  G01M11/0264 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：EP3579052A1

公开(公告)日：2019-12-11

申请号：EP18176718.7

申请日：2018-06-08

Applicant: ASML Netherlands B.V.

Inventor： TRIPODI, Lorenzo ,  HAJIAHMADI, Mohammadreza ,  FARHADZADEH, Farzad ,  TINNEMANS, Patricius Aloysius Jacobus ,  MIDDLEBROOKS, Scott Anderson ,  KOOPMAN, Adrianus Cornelis Matheus ,  STAALS, Frank ,  PETERSON, Brennan ,  VAN OOSTEN, Anton Bernhard

IPC: G03F7/20

Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

公开(公告)号：EP3401733A1

公开(公告)日：2018-11-14

申请号：EP17169918.4

申请日：2017-05-08

Applicant: ASML Netherlands B.V.

Inventor： BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  JAK, Martin, Jacobus Johan ,  HAJIAHMADI, Mohammadreza

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70616

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As') are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

公开(公告)号：EP3470923A1

公开(公告)日：2019-04-17

申请号：EP17195664.2

申请日：2017-10-10

Applicant: ASML Netherlands B.V.

Inventor： JAVAHERI, Narjes ,  HAJIAHMADI, Mohammadreza ,  BOZKURT, Murat ,  DA COSTA ASSAFRAO, Alberto

IPC: G03F7/20

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

公开(公告)号：EP3647871A1

公开(公告)日：2020-05-06

申请号：EP18203837.2

申请日：2018-10-31

Applicant: ASML Netherlands B.V.

Inventor： WARNAAR, Patrick ,  BOS, Hilko, Dirk ,  SMILDE, Hendrik, Jan, Hidde ,  HAJIAHMADI, Mohammadreza

IPC: G03F7/20 ,  G01N21/47

Abstract: The disclosure relates to determining a value of a parameter of interest of a patterning process. A plurality of calibration data units is obtained from targets in a metrology process. Each of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and a polarization property of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target comprising a structure formed using the patterning process on the substrate or on a further substrate. The value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.

公开(公告)号：EP3444676A1

公开(公告)日：2019-02-20

申请号：EP17186295.6

申请日：2017-08-15

Applicant: ASML Netherlands B.V.

Inventor： FARHADZADEH, Farzad ,  HAJIAHMADI, Mohammadreza ,  VAN DER SCHAAR, Maurits ,  BOZKURT, Murat

IPC: G03F7/20

Abstract: Disclosed is a method and associated apparatus of determining a performance parameter (e.g., overlay) of a target on a substrate, and an associated metrology apparatus. The method comprises estimating a set of narrowband measurement values from a set of wideband measurement values relating to the target and determining the performance parameter from said set of narrowband measurement values. The wideband measurement values relate to measurements of the target performed using wideband measurement radiation and may correspond to different central wavelengths. The narrowband measurement values may comprise an estimate of the measurement values which would be obtained from measurement of the target using narrowband measurement radiation having a bandwidth narrower than said wideband measurement radiation.

公开(公告)号：EP3422105A1

公开(公告)日：2019-01-02

申请号：EP17178949.8

申请日：2017-06-30

Applicant: ASML Netherlands B.V.

Inventor： BHATTACHARYYA, Kaustuve ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  NOOT, Marc, Johannes ,  DEN BOEF, Arie, Jeffrey ,  HAJIAHMADI, Mohammadreza ,  FARHADZADEH, Farzad

IPC: G03F7/20

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.