公开(公告)号：WO2019228738A1

公开(公告)日：2019-12-05

申请号：PCT/EP2019/061165

申请日：2019-05-01

Applicant: ASML NETHERLANDS B.V.

Inventor： DA COSTA ASSAFRAO, Alberto ,  HAJIAHMADI, Mohammadreza

IPC: G03F7/20

Abstract: Disclosed is a method of, and associated metrology apparatus for, determining a characteristic of a target on a substrate. The method comprises obtaining a plurality of intensity asymmetry measurements, each intensity asymmetry measurement relating to a target formed on the substrate and determining a sensitivity coefficient corresponding to each target, from the plurality of intensity asymmetry measurements. Using these sensitivity coefficients a representative sensitivity coefficient is determined for said plurality of targets or a subset greater than one thereof. The characteristic of the target can then be determined using the representative sensitivity coefficient. (Fig. 8)

公开(公告)号：WO2018206227A1

公开(公告)日：2018-11-15

申请号：PCT/EP2018/059606

申请日：2018-04-13

Applicant: ASML NETHERLANDS B.V.

Inventor： BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  JAK, Martin, Jacobus, Johan ,  HAJIAHMADI, Mohammadreza ,  GRZELA, Grzegorz ,  MACHT, Lukasz, Jerzy

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G03F9/00

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As') are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

公开(公告)号：WO2021005067A1

公开(公告)日：2021-01-14

申请号：PCT/EP2020/069139

申请日：2020-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： JAVAHERI, Narjes ,  VAN DER SCHAAR, Maurits ,  CHANG, Tieh-Ming ,  BOS, Hilko, Dirk ,  WARNAAR, Patrick ,  BAHRAMI, Samira ,  HAJIAHMADI, Mohammadreza ,  TARABRIN, Sergey ,  SEMKIV, Mykhailo

IPC: G03F7/20 ,  G01B11/06

Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.

公开(公告)号：WO2019034411A1

公开(公告)日：2019-02-21

申请号：PCT/EP2018/070728

申请日：2018-07-31

Applicant: ASML NETHERLANDS B.V.

Inventor： FARHADZADEH, Farzad ,  HAJIAHMADI, Mohammadreza ,  VAN DER SCHAAR, Maurits ,  BOZKURT, Murat

IPC: G03F7/20

Abstract: Disclosed is a method and associated apparatus of determining a performance parameter (e.g., overlay) of a target on a substrate, and an associated metrology apparatus. The method comprises estimating a set of narrowband measurement values from a set of wideband measurement values relating to the target and determining the performance parameter from said set of narrowband measurement values. The wideband measurement values relate to measurements of the target performed using wideband measurement radiation and may correspond to different central wavelengths. The narrowband measurement values may comprise an estimate of the measurement values which would be obtained from measurement of the target using narrowband measurement radiation having a bandwidth narrower than said wideband measurement radiation.

公开(公告)号：WO2020088906A1

公开(公告)日：2020-05-07

申请号：PCT/EP2019/077463

申请日：2019-10-10

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  BOS, Hilko, Dirk ,  SMILDE, Hendrik, Jan, Hidde ,  HAJIAHMADI, Mohammadreza ,  MACHT, Lukasz, Jerzy ,  VAN DEN BOS, Karel, Hendrik, Wouter ,  SOKOLOV, Sergei ,  KUNNEMAN, Lucas, Tijn

IPC: G03F7/20 ,  G01N21/47 ,  H01L21/66

Abstract: The disclosure relates to determining a value of a parameter of interest of a patterning process. A plurality of calibration data units is obtained from targets in a metrology process. Each of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and a polarization property of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target comprising a structure formed using the patterning process on the substrate or on a further substrate. The value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.

公开(公告)号：WO2019233738A1

公开(公告)日：2019-12-12

申请号：PCT/EP2019/062767

申请日：2019-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TRIPODI, Lorenzo ,  WARNAAR, Patrick ,  GRZELA, Grzegorz ,  HAJIAHMADI, Mohammadreza ,  FARHADZADEH, Farzad ,  TINNEMANS, Patricius, Aloysius Jacobus ,  MIDDLEBROOKS, Scott, Anderson ,  KOOPMAN, Adrianus, Cornelis, Matheus ,  STAALS, Frank ,  PETERSON, Brennan ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F7/20

Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

公开(公告)号：WO2019081200A1

公开(公告)日：2019-05-02

申请号：PCT/EP2018/077479

申请日：2018-10-09

Applicant: ASML NETHERLANDS B.V.

Inventor： JAVAHERI, Narjes ,  HAJIAHMADI, Mohammadreza ,  BOZKURT, Murat ,  DA COSTA ASSAFRAO, Alberto ,  NOOT, Marc, Johannes ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  LIAN, Jin

IPC: G03F7/20 ,  G01N21/47 ,  H01L23/544

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

公开(公告)号：WO2021239448A1

公开(公告)日：2021-12-02

申请号：PCT/EP2021/062263

申请日：2021-05-10

Applicant: ASML NETHERLANDS B.V.

Inventor： MARELLI, Mattia ,  HAJIAHMADI, Mohammadreza

IPC: G03F9/00 ,  G03F7/20

Abstract: Disclosed is a method for determining a focus parameter value used to expose at least one structure on a substrate. The method comprises obtaining measurement data relating to a measurement of said at least one structure, wherein the at least one structure comprises a single periodic structure per measurement location and decomposing said measurement data into component data comprising one or more components of said measurement data. At least one of said components is processed to extract processed component data having a reduced dependence on non-focus related effects and a value for the focus parameter is determined from said processed component data. Associated apparatuses and patterning devices are also disclosed.

公开(公告)号：WO2021043519A1

公开(公告)日：2021-03-11

申请号：PCT/EP2020/071954

申请日：2020-08-05

Applicant: ASML NETHERLANDS B.V.

Inventor： WERKMAN, Roy ,  LAM, Pui, Leng ,  MINGHETTI, Blandine, Marie, Andree, Richit ,  BASTANI, Vahid ,  HAJIAHMADI, Mohammadreza ,  VERGAIJ-HUIZER, Lydia, Marianna ,  SPIERING, Frans, Reinier

IPC: G03F7/20

Abstract: A method and apparatus for determining a performance of a lithographic patterning process, the apparatus or method configured for or comprising: receiving an image of a portion of a substrate, the portion of the substrate comprising a first region comprising a first feature associated with a first lithographic exposure of the substrate at a first time, and a second region comprising a second feature associated with a second lithographic exposure of the substrate at a second time, wherein the first and second regions do not overlap and wherein the first feature and the second feature form a single feature extending along at least part of the first region and at least part of the second region; and determining the performance of the lithographic patterning process based on a feature characteristic of the first and/or second exposed feature associated with a boundary between the first region and the second region.

公开(公告)号：WO2019002003A1

公开(公告)日：2019-01-03

申请号：PCT/EP2018/066117

申请日：2018-06-18

Applicant: ASML NETHERLANDS B.V.

Inventor： BHATTACHARYYA, Kaustuve ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  NOOT, Marc, Johannes ,  DEN BOEF, Arie, Jeffrey ,  HAJIAHMADI, Mohammadreza ,  FARHADZADEH, Farzad

IPC: G03F7/20

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.