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公开(公告)号:WO2018202388A1
公开(公告)日:2018-11-08
申请号:PCT/EP2018/059183
申请日:2018-04-10
Applicant: ASML NETHERLANDS B.V.
Inventor: JAVAHERI, Narjes , HAJIAHMADI, Mohammadreza , ZWIER, Olger, Victor , SANGUINETTI, Gonzalo, Roberto
IPC: G03F7/20
CPC classification number: G03F7/70625 , G01M11/00 , G01M11/0264 , G03F7/705 , G03F7/70633
Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
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公开(公告)号:WO2021005067A1
公开(公告)日:2021-01-14
申请号:PCT/EP2020/069139
申请日:2020-07-07
Applicant: ASML NETHERLANDS B.V.
Inventor: JAVAHERI, Narjes , VAN DER SCHAAR, Maurits , CHANG, Tieh-Ming , BOS, Hilko, Dirk , WARNAAR, Patrick , BAHRAMI, Samira , HAJIAHMADI, Mohammadreza , TARABRIN, Sergey , SEMKIV, Mykhailo
Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.
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公开(公告)号:WO2019081200A1
公开(公告)日:2019-05-02
申请号:PCT/EP2018/077479
申请日:2018-10-09
Applicant: ASML NETHERLANDS B.V.
Inventor: JAVAHERI, Narjes , HAJIAHMADI, Mohammadreza , BOZKURT, Murat , DA COSTA ASSAFRAO, Alberto , NOOT, Marc, Johannes , MATHIJSSEN, Simon, Gijsbert, Josephus , LIAN, Jin
IPC: G03F7/20 , G01N21/47 , H01L23/544
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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公开(公告)号:EP4224255A1
公开(公告)日:2023-08-09
申请号:EP22155715.0
申请日:2022-02-08
Applicant: ASML Netherlands B.V.
Inventor: NAGHIBZADEH, Shahrzad , JAVAHERI, Narjes
IPC: G03F7/20
Abstract: Disclosed is a method for determining a parameter of interest relating to at least one target on a substrate. The method comprises obtaining metrology data comprising at least one asymmetry signal, said at least one asymmetry signal comprising a difference or imbalance in a measurement parameter from the target; obtaining a trained model having been trained or configured to relate said at least one asymmetry signal to the parameter of interest, the trained model comprising at least one proxy for at least one nuisance component of the at least one asymmetry signal; and inferring said parameter of interest for said at least one target from said at least one asymmetry signal using the trained model.
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公开(公告)号:EP3470923A1
公开(公告)日:2019-04-17
申请号:EP17195664.2
申请日:2017-10-10
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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