公开(公告)号：US08932959B2

公开(公告)日：2015-01-13

申请号：US13786850

申请日：2013-03-06

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Mang-mang Ling ,  Jeremiah T. Pender ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Sergey G. Belostotskiy ,  Sumit Agarwal

IPC: H01L21/302 ,  H01L21/461 ,  H01L45/00 ,  H01J37/32

CPC classification number: H01L45/00 ,  H01J37/321 ,  H01L43/12

Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.

Abstract translation: 在具有介电RF窗口的电感耦合等离子体反应器中进行包括含有先进的记忆材料的下部薄膜层的薄膜叠层的蚀刻，而不暴露下部薄膜层，然后蚀刻工艺在环形源 等离子体反应器。

公开(公告)号：US20140170856A1

公开(公告)日：2014-06-19

申请号：US13786850

申请日：2013-03-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivas D. Nemani ,  Mang-mang Ling ,  Jeremiah T. Pender ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Sergey G. Belostotskiy ,  Sumit Agarwal

IPC: H01L21/3065

CPC classification number: H01L45/00 ,  H01J37/321 ,  H01L43/12

Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.

Abstract translation: 在具有介电RF窗口的电感耦合等离子体反应器中进行包括含有先进的记忆材料的下部薄膜层的薄膜叠层的蚀刻，而不暴露下部薄膜层，然后蚀刻工艺在环形源 等离子体反应器。

公开(公告)号：US11851758B2

公开(公告)日：2023-12-26

申请号：US17235258

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Sumit Agarwal ,  Katherine Woo ,  Shawyon Jafari ,  Jian Li ,  Chidambara A. Ramalingam

IPC: C23C16/455 ,  B22D30/00

CPC classification number: C23C16/45565 ,  B22D30/00 ,  C23C16/45525 ,  Y10T29/49433

Abstract: Methods of manufacturing a semiconductor processing chamber showerheads may include forming a melted aluminum alloy composition, cooling the melted aluminum alloy composition at a rate of at least 103 K/sec to form solid aluminum alloy particles, and forming a core region of a showerhead from the solid aluminum alloy particles. The core region of the showerhead may include an inner core region and an outer core region that may be coupled together. The inner core region may define a plurality of apertures. The outer core region may define a channel that receives a heating element. The methods may include coating the core region with one of aluminum or aluminum oxide and joining a peripheral edge of the outer core region with an inner edge of a metallic annular liner. The metallic annular liner may have a lower thermal conductivity than the core region of the showerhead.

公开(公告)号：US11371148B2

公开(公告)日：2022-06-28

申请号：US17001551

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Sumit Agarwal ,  Anantha K Subramani ,  Yang Guo ,  Siva Chandrasekar

IPC: G06K9/62 ,  C23C16/52 ,  C23C16/455 ,  G06N20/00

Abstract: A method includes receiving one or more parameters associated with a plurality of metal plates. The method further includes determining, based on the one or more parameters, a plurality of predicted deformation values associated with the plurality of metal plates. Each of the plurality of predicted deformation values correspond to a corresponding metal plate of the plurality of metal plates. The method further includes causing, based on the plurality of predicted deformation values, the plurality of metal plates to be diffusion bonded to produce a bonded metal plate structure.

公开(公告)号：US09090046B2

公开(公告)日：2015-07-28

申请号：US13747292

申请日：2013-01-22

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Ren-Guan Duan ,  Sumit Agarwal ,  Dmitry Lubomirsky

IPC: B32B18/00 ,  C04B41/50 ,  C04B41/87 ,  C04B41/00 ,  C04B41/45

CPC classification number: C04B35/505 ,  B32B18/00 ,  C04B35/62222 ,  C04B35/62665 ,  C04B35/62675 ,  C04B41/009 ,  C04B41/4545 ,  C04B41/5045 ,  C04B41/87 ,  C23C4/134 ,  Y10T428/24562 ,  C04B35/00 ,  C04B35/10 ,  C04B41/4527 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/53

Abstract: To manufacture a ceramic article, a ceramic body comprising Al2O3 is roughened to a roughness of approximately 140 micro-inches (μin) to 240 μin. The ceramic body is subsequently cleaned and then coated with a ceramic coating. The ceramic coating comprises a compound of Y4Al2O9 (YAM) and a solid solution of Y2-xZrxO3. The ceramic coating is then polished.

Abstract translation: 为了制造陶瓷制品，将包含Al 2 O 3的陶瓷体粗糙化至约140微英寸（μin）至240μin的粗糙度。 随后清洁陶瓷体，然后用陶瓷涂层涂覆。 陶瓷涂层包含Y4Al2O9（YAM）的化合物和Y2-xZrxO3的固溶体。 然后抛光陶瓷涂层。

公开(公告)号：US20140308758A1

公开(公告)日：2014-10-16

申请号：US13934017

申请日：2013-07-02

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Sumit Agarwal ,  Jeremiah T. Pender ,  Jonathan Germain ,  Khoi Doan ,  Bradley Howard

IPC: H01L43/12

CPC classification number: H01L43/12

Abstract: Methods of forming material junctions for magnetic memory devices are described. The methods involve providing a material stack including a bottom magnetic tunneling junction layer, a tunneling barrier layer, and a top magnetic tunneling junction layer (from bottom to top) on a substrate. The top magnetic tunneling junction layer is patterned to form a top magnetic tunneling junction and then a dielectric spacer layer may be formed over the top magnetic tunneling junction. The dielectric spacer is etched to leave a vertical dielectric spacer to maintain electrical separation between the top magnetic tunneling junction and the bottom magnetic tunneling junction during and following subsequent etching/processing. In an alternative embodiment the spacer layer is lithographically defined.

Abstract translation: 描述了形成用于磁存储器件的材料结的方法。 所述方法包括在衬底上提供包括底部磁隧道结层，隧道势垒层和顶部磁性隧道结层（从底部到顶部）的材料堆叠。 将顶部磁隧道结层图案化以形成顶部磁性隧道结，然后可以在顶部磁性隧道结上方形成电介质间隔层。 蚀刻电介质间隔物以留下垂直电介质间隔物，以在随后的蚀刻/处理期间和之后保持顶部磁隧道结与底部磁性隧道结之间的电分离。 在替代实施例中，间隔层被光刻地限定。

公开(公告)号：US20220396857A1

公开(公告)日：2022-12-15

申请号：US17343482

申请日：2021-06-09

Applicant: Applied Materials, Inc.

Inventor： Joseph F. Behnke ,  Joseph Frederick Sommers ,  Sumit Agarwal

IPC: C22F1/04 ,  H01L21/48 ,  H01L21/67 ,  C22F1/00 ,  C22F1/02 ,  B23K20/02

Abstract: Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.

公开(公告)号：US11332827B2

公开(公告)日：2022-05-17

申请号：US16802293

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Sumit Agarwal ,  Sanjeev Baluja ,  Chad Peterson ,  Michael R. Rice

IPC: C23C16/40 ,  C23C16/455 ,  B23K1/00

Abstract: A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.

公开(公告)号：US11111582B2

公开(公告)日：2021-09-07

申请号：US16808046

申请日：2020-03-03

Applicant: Applied Materials, Inc.

Inventor： Sumit Agarwal ,  Chad Peterson ,  Marc Shull

IPC: C23C16/40 ,  C23C16/455

Abstract: A showerhead assembly includes a support structure and a porous plate. The support structure includes a support feature. The porous plate has a thermal conductivity of at least about 50 W/(mK) and includes a plurality of pores having an average diameter of less than about 100 um, wherein at least a portion of a perimeter of the porous plate rests on the support feature. The showerhead may be included within a processing chamber that is utilized to process a substrate.

公开(公告)号：US09960052B2

公开(公告)日：2018-05-01

申请号：US14243677

申请日：2014-04-02

Applicant: Applied Materials, Inc.

Inventor： Sumit Agarwal ,  Ann Chien ,  Chiu-Pien Kuo ,  Mark Hoinkis ,  Bradley J. Howard

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/768

CPC classification number: H01L21/32136 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/32139 ,  H01L21/7682 ,  H01L21/76885

Abstract: Embodiments of the present invention provide methods for patterning a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a metal layer on a substrate includes (a) supplying an etching gas mixture comprising a hydro-carbon gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, (b) exposing the metal layer to an ashing gas mixture comprising a hydrogen containing gas to the substrate, and (c) repeatedly performing steps (a) and (b) until desired features are formed in the metal layer. During the patterning process, the substrate temperature may be controlled at greater than 50 degrees Celsius.