PROCESS FOR THE PRODUCTION OF RESIST IMAGES AND DRY RESIST FILM FOR THIS PROCESS

    公开(公告)号:DE3473065D1

    公开(公告)日:1988-09-01

    申请号:DE3473065

    申请日:1984-11-22

    Applicant: BASF AG

    Abstract: In the production of resist images by application of a radiation-sensitive positive-working resist layer based on degradable polymers onto a substrate, imagewise exposure of the resist layer to actinic radiation and removal of the irradiated parts of the layer with development of the resist image, the radiation-sensitive resist layer used is composed of poly(diacetylenes), in particular soluble ones. Preferably, the radiation-sensitive resist layer based on the poly(diacetylenes) contains sensitizers which can be activated by actinic radiation and which, after being activated, induce or accelerate molecular degradation of the poly(diacetylenes). Dry film resists comprise a temporary dimensionally stable base and a radiation-sensitive resist layer which is applied on the base, can be degraded by exposure to actinic radiation and is based on poly(diacetylenes), in particular soluble ones, with or without a cover sheet on top of the said resist layer.

    16.
    发明专利
    未知

    公开(公告)号:DE59503927D1

    公开(公告)日:1998-11-19

    申请号:DE59503927

    申请日:1995-01-23

    Applicant: BASF AG

    Abstract: PCT No. PCT/EP95/00225 Sec. 371 Date Jul. 31, 1996 Sec. 102(e) Date Jul. 31, 1996 PCT Filed Jan. 23, 1995 PCT Pub. No. WO95/21221 PCT Pub. Date Aug. 10, 1995Prints are produced by the offset heatset process using a printing ink based on mineral oil and additionally using an agent for increasing the abrasion resistance of the prints, where the agent for increasing the abrasion resistance is an oxidized olefin polymer which has a melt viscosity of from 100 to 15,000 mm2/s, measured in accordance with DGF M-III 8 (75), and an acid number of from 5 to 50 mg of KOH/g of polymer, measured in accordance with DGF M-IV 2 (57).

    17.
    发明专利
    未知

    公开(公告)号:DE59406233D1

    公开(公告)日:1998-07-16

    申请号:DE59406233

    申请日:1994-08-27

    Applicant: BASF AG

    Abstract: PCT No. PCT/EP94/02846 Sec. 371 Date Mar. 8, 1996 Sec. 102(e) Date Mar. 8, 1996 PCT Filed Aug. 27, 1994 PCT Pub. No. WO95/07313 PCT Pub. Date Mar. 16, 1995Stable aqueous polyolefin wax dispersions contain A) from 5 to 65% by weight of polyethylene wax or polypropylene wax having a mean particle size of from 1 to 50 mu m and an acid number of less than 5 mg of KOH/g of wax and B) from 0.5 to 20% by weight of glyceride of predominantly ethylenically monounsaturated or polyunsaturated C16-C22-monocarboxylic acids which may additionally contain hydroxyl groups, which glyceride has been reacted with from 1 to 50 mol of a 1,2-alkylene oxide of 2 to 4 carbon atoms, as a dispersant. These dispersions are suitable for the production of floor and stone polishes, shoe polishes, car polishes, printing inks, print pastes, finishes, packagings, lubricating greases, vaseline, drawing compounds, sealing and insulating materials for electrical parts, aqueous wood glazes, hot-melt coatings, cosmetic formulations and toothpastes, in plastics processing, in papermaking and in corrosion protection, for the treatment of fabrics and yarns and for leather treatment and as parting compounds in gravity die casting, pressure die casting and centrifugal casting of nonferrous metals.

    Process for producing resist patterns and dry film resist suitable for said process

    公开(公告)号:DE3342829A1

    公开(公告)日:1985-06-05

    申请号:DE3342829

    申请日:1983-11-26

    Applicant: BASF AG

    Abstract: In the production of resist patterns by applying a photosensitive, positive-working resist layer based on photodegradable polymers to a substrate, image-wise exposing the resist layer to actinic light and removing the exposed layer portions to develop the resist pattern, a photosensitive resist layer is used which is made of a poly(diacetylene) which is, in particular, soluble. The invention also relates to dry film resists with a temporary, dimensionally stable layer base, a photosensitive photodegradable resist layer applied thereto and based on poly(diacetylenes), which are preferably soluble, and, optionally, a top layer on the photosensitive resist layer.

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