-
11.发明公开THE USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS IN FORMULATIONS FOR PHOTO MASK CLEANING 审中-公开VERWENDUNG VON TENSIDEN MIT MINDESTENS DREI KURZKETTIGEN PERFLUORIERTEN GRUPPEN IN FORMULIERUNGEN ZUR REINIGUNG VON PHOTOMASKEN
公开(公告)号：EP3033408A4
公开(公告)日：2017-04-26
申请号：EP14822568
申请日：2014-07-08
Applicant: BASF SE
Inventor： KLIPP ANDREAS , HONCIUC ANDREI , YANG CHU-YA
CPC classification number: G03F1/82 , C11D1/004 , G03F1/22 , G03F1/24 , G03F1/68 , G03F7/20 , G03F7/32
Abstract: The use of surfactants A, a 1% by weight, aqueous solutions of which exhibit a static surface tension
Abstract translation: 使用表面活性剂A（1重量％，其水溶液表现出<25mN / m的静态表面张力），所述表面活性剂A含有至少三个选自三氟甲基，五氟乙基 ，1-七氟丙基，2-七氟丙基和五氟硫烷基，用于清洁具有用于制造半导体基板的图案的光掩模，所述半导体基板包括具有最小线间距尺寸低于60nm的图案。 通过使用包含表面活性剂A的掩模清洁溶液，提高了颗粒去除效率，用于物理力处理的更宽工艺窗口，没有观察到雾霾缺陷，没有水印和没有CD损失。
-
12.发明公开COMPOSITION FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES 审中-公开组成集成电路，光学器件，微机器及机械精密设备生产
公开(公告)号：EP2875406A4
公开(公告)日：2016-11-09
申请号：EP13819208
申请日：2013-07-12
Applicant: BASF SE
Inventor： KLIPP ANDREAS , HONCIUC ANDREI , MONTERO PANCERA SABRINA , BAAN ZOLTAN
CPC classification number: G03F7/32 , G03F7/2002 , G03F7/2041 , G03F7/322
-
13.发明公开COMPOSITIONS FOR ANTI PATTERN COLLAPSE TREATMENT COMPRISING GEMINI ADDITIVES 有权ZUSAMMENSETZUNGEN ZUR BEHANDLUNGFÜRDEN SCHUTZ VONSTRUKTURSCHÄDENMIT GEMINI-ADDITIVEN
公开(公告)号：EP2872948A4
公开(公告)日：2016-11-02
申请号：EP13816602
申请日：2013-07-01
Applicant: BASF SE
Inventor： KLIPP ANDREAS , HONCIUC ANDREI , OETTER GÜNTER , BITTNER CHRISTIAN
CPC classification number: C11D11/0047 , C11D1/008 , C11D1/40 , C11D1/62 , G03F7/2041 , G03F7/322 , G03F7/40
-
14.发明公开USE OF COMPOSITIONS COMPRISING A SURFACTANT AND A HYDROPHOBIZER FOR AVOIDING ANTI PATTERN COLLAPSE WHEN TREATING PATTERNED MATERIALS WITH LINE-SPACE DIMENSIONS OF 50 NM OR BELOW 有权用表面活性剂和疏化合物的用途，手段来减少结构倒塌的危险结构性材料处理为50nm或更小尺寸领先
公开(公告)号：EP2932525A4
公开(公告)日：2016-08-24
申请号：EP13861597
申请日：2013-12-04
Applicant: BASF SE
Inventor： KLIPP ANDREAS , HONCIUC ANDREI , OETTER GÜNTER , BITTNER CHRISTIAN
CPC classification number: G03F7/422 , C11D1/835 , C11D1/94 , C11D11/0047 , G03F7/2041 , G03F7/405 , H01L21/02057 , H01L21/0273
Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.
-
-
-
Search Results
14
records
(took 0.023 seconds)
