公开(公告)号：WO1998026440A1

公开(公告)日：1998-06-18

申请号：PCT/US1997021095

申请日：1997-11-26

Applicant: CANDESCENT TECHNOLOGIES CORPORATION

Inventor： CANDESCENT TECHNOLOGIES CORPORATION ,  FAHLEN, Theodore, S. ,  LUDWIG, Paul, N. ,  SCHMID, Anthony, P. ,  PRESSLEY, Robert, J. ,  CHO, Steven, T. ,  CONTE, Alfred, S. ,  COOPER, Anthony, J. ,  POTHOVEN, Floyd, R.

IPC: H01J09/26

CPC classification number: H01J31/123 ,  B23K26/206 ,  C03B23/24 ,  H01J9/261 ,  H01J9/385

Abstract: Portions (40 and 44) of a structure, such as a flat-panel display, are positioned such that a sealing area (40S) of one portion is at least partially separated from a corresponding sealing area (44S) of another portion such that a gap (48) at least partially separates the two sealing areas, typically by height of 25 microns or more. Energy is applied in a "gap jumping technique" to locally heat material of at least one portion along the sealing area such that the material bridges the gap and seals the portions (40 and 44) together. A laser is typically employed to locally melt and draw the material into the gap by a combination of factors such as surface tension and capillary action. A first part of the gap jumping technique may be performed in a non-vacuum environment to tack the portions together, but the gap jumping technique is typically completed in a vacuum to form an evacuated panel.

Abstract translation: 诸如平板显示器的结构的部分（40和44）被定位成使得一部分的密封区域（40S）至少部分地与另一部分的对应的密封区域（44S）分离，使得 间隙（48）至少部分地分离两个密封区域，通常高度为25微米或更大。 能量以“间隙跳跃技术”施加以沿着密封区域局部加热至少一部分的材料，使得材料桥接间隙并将部分（40和44）密封在一起。 通常使用激光器来局部熔融并通过诸如表面张力和毛细管作用的因素的组合将材料吸入间隙中。 间隙跳跃技术的第一部分可以在非真空环境中执行以将部分粘合在一起，但间隙跳跃技术通常在真空中完成以形成抽空的面板。

公开(公告)号：WO1998002899A1

公开(公告)日：1998-01-22

申请号：PCT/US1997011730

申请日：1997-07-16

Applicant: CANDESCENT TECHNOLOGIES CORPORATION

Inventor： CANDESCENT TECHNOLOGIES CORPORATION ,  SPINDT, Christopher, J. ,  FIELD, John, E.

IPC: H01J19/42

CPC classification number: H01J29/028 ,  H01J9/185 ,  H01J31/127 ,  H01J2201/025 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/8655

Abstract: A flat panel display (300) having a faceplate structure (320), a backplate structure (330), a focusing structure (333a), and a plurality of spacers (340). The backplate structure includes an electron emitting structure (332) which faces the faceplate structure. The focusing structure has a first surface which is located on the electron emitting structure, and a second surface which extends away from the electron emitting structure. The electrical end of the combination of the focusing structure and the electron emitting structure is located at an imaginary plane located intermediate the first and second surfaces of the focusing structure. The spacers are located between the focusing structure and the light emitting structure. Each spacer is located within a corresponding groove in the focusing structure such that the electrical end of each spacer is located coincident with the electrical end of the combination of the focusing structure and the electron emitting structure.

Abstract translation: 具有面板结构（320），背板结构（330），聚焦结构（333a）和多个间隔物（340）的平板显示器（300）。 背板结构包括面向面板结构的电子发射结构（332）。 聚焦结构具有位于电子发射结构上的第一表面和远离电子发射结构延伸的第二表面。 聚焦结构和电子发射结构的组合的电端位于位于聚焦结构的第一和第二表面之间的假想平面处。 间隔物位于聚焦结构和发光结构之间。 每个间隔物位于聚焦结构中的相应凹槽内，使得每个间隔物的电端与聚焦结构和电子发射结构的组合的电端重合。

公开(公告)号：WO1997047020A1

公开(公告)日：1997-12-11

申请号：PCT/US1997009196

申请日：1997-06-05

Applicant: CANDESCENT TECHNOLOGIES CORPORATION

Inventor： CANDESCENT TECHNOLOGIES CORPORATION ,  HAVEN, Duane, A. ,  LUDWIG, Paul, N. ,  SPINDT, Christopher, J. ,  DOBKIN, Daniel, M.

IPC: H01J01/30

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.

Abstract translation: 门控电子发射器通过其中颗粒（26）沉积在绝缘层（24）上的方法制造。 在颗粒之间的空间中的绝缘层上提供栅极材料，之后除去颗粒和任何上覆材料。 剩余的栅极材料形成栅极层（28A或48A），栅极开口（30或50）在去除的颗粒的位置处延伸通过栅极层（28A或48A）。 当进行栅极材料沉积使得栅极材料的一部分延伸到颗粒下方的空间中时，栅极开口被倒角。 通过栅极开口蚀刻绝缘层以形成电介质开口（32或52）。 在电介质开口中形成电子发射元件（36A或56A）。 这通常包括将发射体材料通过栅极开口引入电介质开口并使用剥离层（34）或电化学技术来去除多余的发射体材料。