公开(公告)号：DE69928068D1

公开(公告)日：2005-12-08

申请号：DE69928068

申请日：1999-11-24

Applicant: CANON KK

Inventor： AIBA TOSHIAKI ,  MOTOI TAIKO ,  NAKAMURA KUMI ,  YAMANOBE MASATO ,  UENO RIE ,  SHIBATA MASAAKI

IPC: H01J31/12 ,  H01J1/316 ,  H01J29/04 ,  H01J1/30

Abstract: An electron-emitting device includes a substrate (1), first and second carbon films (10) disposed so as to have a first gap (7) between the first and second carbon films on a surface of the substrate, and first and second electrodes (3,4) electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.

公开(公告)号：DE69911355D1

公开(公告)日：2003-10-23

申请号：DE69911355

申请日：1999-11-24

Applicant: CANON KK

Inventor： MOTOI TAIKO ,  UENO RIE ,  NAKAMURA KUMI ,  YAMANOBE MASATO ,  AIBA TOSHIAKI ,  SHIBATA MASAAKI

IPC: H01J29/04 ,  H01J1/316 ,  H01J31/12 ,  H01J1/30

Abstract: There is provided an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate (1), first and second carbon films (21b,21a) laid with a first gap (8) in between on the surface of the substrate (1), and first and second electrodes (4b,4a) electrically connected to the first carbon film (21b) and to the second carbon film (21a), respectively. In the electron-emitting device, the distal portion (B) of the first carbon film (21B) is located above the surface of the substrate (1) at a greater distance (Hb) than the distance (Ha) of the distal portion (A) of the second carbon film (21a) above the surface of the substrate (1). In use, to effect electron emission, a higher potential is applied to the first electrode (4b) than to the second electrode (4a). An electron source is provided having a multiplicity of these devices on a common substrate (1). Such an electron source is provided in image forming apparatus opposite to an image forming member.

公开(公告)号：CA2071192C

公开(公告)日：1997-09-30

申请号：CA2071192

申请日：1992-06-12

Applicant: CANON KK

Inventor： MORISHITA MASAKAZU ,  AIBA TOSHIAKI

IPC: H01L21/20 ,  H01L21/331 ,  H01L21/265

Abstract: A seed is formed in a manner that a crystalline film is formed on an underlayer material, and then partly made amorphous by ion implanting impurities into the crystalline film, with a crystalline portion left behind in part thereof. After forming a step configuration on the underlayer material, the crystalline film is formed, and ions are implanted over its entire surface of the crystalline film.

公开(公告)号：CA2071192A1

公开(公告)日：1992-12-15

申请号：CA2071192

申请日：1992-06-12

Applicant: CANON KK

Inventor： AIBA TOSHIAKI ,  MORISHITA MASAKAZU

IPC: H01L21/20 ,  H01L21/331 ,  H01L21/265