11.
    发明专利
    未知

    公开(公告)号:ES2044845T3

    公开(公告)日:1994-01-16

    申请号:ES87102204

    申请日:1987-02-17

    Applicant: CANON KK

    Abstract: A driving apparatus comprises a scanning driver circuit connected to scanning electrodes and a signal driver circuit connected to signal electrodes. The sccanning driver circuit comprises: a drive signal voltage generating unit which includes a first signal voltage generating unit for generating a scanning selection signal voltage supplied to a first bus, and a second signal voltage generating unit for generating a scanning nonselection signal voltage supplied to a second bus, a switching circuit unit for selectively supplying the scanning selection signal or the scanning nonselection signal to a scanning electrode, and a switching signal generating unit for supplying a switching control signal to the switching circuit unit.

    IMAGE FORMING APPARATUS AND DRIVING METHOD THEREFOR

    公开(公告)号:GB2159655B

    公开(公告)日:1988-09-01

    申请号:GB8510509

    申请日:1985-04-25

    Applicant: CANON KK

    Abstract: An image forming apparatus comprising an exposure light source, a printer head which comprises a group of micro-shutters each controlling the transmission or interruption of light from the exposure light source, and an image bearing so disposed to be irradiated with light signals transmitted through the printer head. The group of micro-shutters are arranged in a matrix comprising a plurality of rows and a plurality of columns. The group of micro-shutters are formed by a substrate having thereon a plurality of segment electrodes each forming a shutter and connected to a drain of a thin film transistor, another substrate having thereon a common electrode, and a liquid crystal interposed between the substrates. The image forming apparatus further comprises means for applying a scanning signal to the gate of the thin film transistor and applying an electric signal corresponding to image information in synchronism with the scanning signal.

    Thin film transistor with wiring layer continuous with the source and drain

    公开(公告)号:GB2140203A

    公开(公告)日:1984-11-21

    申请号:GB8406367

    申请日:1984-03-12

    Applicant: CANON KK

    Abstract: In a semiconductor device comprising a wiring to be connected to the source region 1105, 1106 or the drain region 1107, 1108 of a thin film, transistor X, at least a portion of the wiring comprises a wiring part Y having the same cross-sectional structure as said source region or said drain region. This wiring part is formed continuously and simultaneously with said source region or said drain region in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor. The layers comprise polycrystalline Si 1101, n+Si 1102 and Al, Mo or Cr 1103 on a glass or quartz substrate 1100.

    17.
    发明专利
    未知

    公开(公告)号:DE69332017D1

    公开(公告)日:2002-07-18

    申请号:DE69332017

    申请日:1993-12-28

    Applicant: CANON KK

    Abstract: An electron source emits electrons as a function of input signals. The electron source comprises a substrate (1), a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes (5,6) and a thin film (4) including an electron emitting region (3) and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. Each pixel unit is irradiated by at least two electron beams emitted from the respective electron emitting regions which are juxtaposed with interleaving the higher potential device electrode therebetween and a gap interval W in the juxtaposing direction of which satisfies equation (1) below: K2 x 2H(Vf/Va) ≥ W/2 ≥ K3 x 2H(Vf/Va) where K2 = 1.25 +/- 5.05, K3 = 0.35 +/- 0.05, H is the distance between the surface-conduction electron-emitting devices and the image-forming member, Vf is the voltage applied to the surface-conduction electron-emitting device and Va is the voltage applied to the image-forming member.

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