16.
    发明专利
    未知

    公开(公告)号:DE69232607D1

    公开(公告)日:2002-06-20

    申请号:DE69232607

    申请日:1992-06-02

    Applicant: DOW CORNING

    Abstract: The present invention relates to a method of forming a silica coating on a substrate. The method comprises coating a substrate with a silica precursor having a melting point between about 50 and about 450 DEG C. The coating is heated to a temperature above its melting point in an inert environment to allow the coating to melt and flow. The melted coating is then heated in an environment which facilitates conversion to silica for a time sufficient to convert it to silica.

    18.
    发明专利
    未知

    公开(公告)号:DE69512307T2

    公开(公告)日:2000-05-11

    申请号:DE69512307

    申请日:1995-05-01

    Applicant: DOW CORNING

    Abstract: A curable organosiloxane compsn. comprises: (A) a curable polyorganosiloxane; (B) a curing agent; (C) a cure promoter; and (D) an adhesion-promoter effective during curing at below 100[deg]C., comprising: (I) a first liq. organo-Si cpd. of formula (R1O)aSi(OR2)4-a or R3(OSi(OR2)3)2; and (II) a second liq. organo-Si cpd. from; (1) organosilanes in which the Si is bonded to (a) >= one alkoxy, enoloxy or silanol gp. or (b) >= one Si-bonded H or ethylenically-unsatd. gp. bonded to Si via C that will participate in a hydrosilation reaction; and (2) organosiloxanes comprising (a) units of formula R11dR12eSiO(4-d-e)/2, and (b) units contg. >=one Si-bonded alkoxy, enoloxy or silanol gp.; the alkoxy gps. contg. 1-4C; the enoloxy gps.contg. 3-8C. In the formulae, R1 = CH2C(R4)CH2R8-; CH2=C(R4)R5OR6-; (CH2=C(R4)R5O)bR9-; (CH2=C(R4))bR9-; CH2=C(R4)R8C(O)OR6-; CH2=C(R4)R8OC(O)OR6- and CH2 =C(R4)R5OC(O)R7-; R2 = 1-4C alkyl, or 1-alkenyl and 1-cycloalkenyl radials; R3 = divalent radical from CH2C(R4)R10=; CH2=C(R4)R5OR10=; CH2-C(R4)R8c(O)OR10=; CH2-C(R4)R8OC(O)OR10=; and CH2=c(R4)R5OC(O)R10=; R4 = H or alkyl; R5 = hydrocarbylene radical; R6 = R5, with the proviso that R6 contains >= 2C; R7 = R5; R8 = single bond or R5; R9 = hydrocarbon radicals with a valence of b+1; R10 = trivalent hydrocarbon radical; R11 = H or unsatd. gp.bonded to Si via C and capable of undergoing hydrosilation; R12 = monovalent hydrocarbon radical; a = 1,2, or 3; b = 2 or 3; d = 0, 1 2 or 3; and e = 0, 1 or 2; with the proviso that the d+e does not exceed 3. The compsn. is cured using a reaction from: (i) hydrolysation reaction catalysed by Pt gp. metals and cpds.; (ii) reactions of Si-bonded H with silanol gps.; and (iii) free radical reactions initiated by the decompsn. of a photolytically unstable cpd.

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