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公开(公告)号:JPH07187640A
公开(公告)日:1995-07-25
申请号:JP22328994
申请日:1994-09-19
Applicant: DOW CORNING
Inventor: BALLANCE DAVID STEPHEN , CAMILETTI ROBERT CHARLES , DUNN DIANA KAY
IPC: C01B33/113 , C01B33/00 , C04B35/04 , H01L21/3105 , H01L21/316
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公开(公告)号:DE69311639D1
公开(公告)日:1997-07-24
申请号:DE69311639
申请日:1993-07-08
Applicant: DOW CORNING
Inventor: BALLANCE DAVID STEPHEN , ECKSTEIN MARIE NORTON , LOBODA MARK JOHN , MICHAEL KEITH WINTON , SHELTON LIBERTY BELLE
IPC: C04B41/45 , C04B41/50 , C04B41/87 , C09D183/04 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/48 , H01L23/29
Abstract: The present invention relates to a low temperature method of forming silica-containing ceramic coatings on substrates. The method involves applying a coating comprising a silicon hydride containing resin on a substrate and heating the coated substrate under an environment comprising nitrous oxide at a temperature sufficient to convert the resin to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.
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公开(公告)号:DE69232607D1
公开(公告)日:2002-06-20
申请号:DE69232607
申请日:1992-06-02
Applicant: DOW CORNING
IPC: B05D3/02 , B05D7/24 , C04B41/50 , C23C18/12 , H01L21/312 , H01L21/316
Abstract: The present invention relates to a method of forming a silica coating on a substrate. The method comprises coating a substrate with a silica precursor having a melting point between about 50 and about 450 DEG C. The coating is heated to a temperature above its melting point in an inert environment to allow the coating to melt and flow. The melted coating is then heated in an environment which facilitates conversion to silica for a time sufficient to convert it to silica.
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公开(公告)号:DE69400609T2
公开(公告)日:1997-03-06
申请号:DE69400609
申请日:1994-09-07
Applicant: DOW CORNING
Inventor: BALLANCE DAVID STEPHEN , MICHAEL KEITH WINTON
IPC: C04B41/84 , C01B33/12 , C04B35/622 , C08G77/12 , C09D183/04 , C23C18/12 , H01L21/312 , H01L21/316 , C04B41/50 , H01L23/29
Abstract: A coating contg. Si-O is formed on an electronic substrate by a method comprising: (i) coating the substrate with hydrogen silsesquioxane resin, and (ii) converting the coating to a Si-O-contg. ceramic by pyrolysing in an atmos. to which H2 is introduced during the conversion. The resin comprises at least 75% polymeric species of 1200-100,000 MW and is applied as a soln. from which the solvent is then evapd. The substrate is heated at 50-1000 deg.C for less than 6 hr. The atmos. contains air, O2, oxygen plasma, O3, an inert gas, ammonia, amines, moisture or N2O, and the H2 content is 1-30 vol.% and is esp. 5 vol.% max. The resin contains a modifying ceramic oxide precursor comprising a Ti, Zr, Al, Ta, V, Nb, B or P cpd. contg. a hydrolysable alkoxy or acyloxy group; the ceramic oxide is 0.1-30% of the SiO2 coating. The coating also contains 5-1000 ppm Pt, Rh or Cu catalyst.
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公开(公告)号:DE69416767T2
公开(公告)日:1999-11-11
申请号:DE69416767
申请日:1994-09-16
Applicant: DOW CORNING
Inventor: BALLANCE DAVID STEPHEN , DUNN DIANA KAY , CAMILLETTI ROBERT CHARLES
IPC: C01B33/00 , C01B33/113 , C04B35/04 , H01L21/3105 , H01L21/316
Abstract: Disclosed is a method for forming improved Si-O containing coatings on electronic substrates. The method comprises treating Si-O containing ceramic coatings derived from hydrogen silsesquioxane resin with hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.
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公开(公告)号:DE69311690T2
公开(公告)日:1998-01-08
申请号:DE69311690
申请日:1993-10-21
Applicant: DOW CORNING
Inventor: BALLANCE DAVID STEPHEN , HALUSKA LOREN ANDREW , LOBODA MARK JON
IPC: C01B33/12 , C04B41/49 , B32B18/00 , C04B41/84 , C04B41/87 , H01L21/314 , H01L21/316 , H01L21/48 , H01L23/29 , H01L23/498
Abstract: Silica-containing ceramic coatings are produced on substrates at low temperatures by applying a coating comprising a silica precursor on a substrate and heating the coated substrate under an environment comprising nitrous oxide at a temperature sufficient to convert the silica precursor to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.
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公开(公告)号:DE69305048D1
公开(公告)日:1996-10-31
申请号:DE69305048
申请日:1993-11-01
Applicant: DOW CORNING
Inventor: ECKSTEIN MARIE NORTON , BALLANCE DAVID STEPHEN
IPC: C23C16/22 , C23C16/12 , C23C16/27 , C23C16/40 , C23C16/42 , C23C16/511 , H01L21/316
Abstract: A method is described herein for depositing a coating containing silicon and oxygen on a substrate. The method comprises introducing a gas comprising hydrogen silsesquioxane into a deposition chamber containing the substrate and a reactive environment comprising nitrous oxide. Reaction of the gas is then induced to form the coating.
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公开(公告)号:DE69232607T2
公开(公告)日:2002-12-05
申请号:DE69232607
申请日:1992-06-02
Applicant: DOW CORNING
IPC: B05D3/02 , B05D7/24 , C04B41/50 , C23C18/12 , H01L21/312 , H01L21/316
Abstract: The present invention relates to a method of forming a silica coating on a substrate. The method comprises coating a substrate with a silica precursor having a melting point between about 50 and about 450 DEG C. The coating is heated to a temperature above its melting point in an inert environment to allow the coating to melt and flow. The melted coating is then heated in an environment which facilitates conversion to silica for a time sufficient to convert it to silica.
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公开(公告)号:DE69416767D1
公开(公告)日:1999-04-08
申请号:DE69416767
申请日:1994-09-16
Applicant: DOW CORNING
Inventor: BALLANCE DAVID STEPHEN , DUNN DIANA KAY , CAMILLETTI ROBERT CHARLES
IPC: C01B33/00 , C01B33/113 , C04B35/04 , H01L21/3105 , H01L21/316
Abstract: Disclosed is a method for forming improved Si-O containing coatings on electronic substrates. The method comprises treating Si-O containing ceramic coatings derived from hydrogen silsesquioxane resin with hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.
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公开(公告)号:DE69305048T2
公开(公告)日:1997-04-10
申请号:DE69305048
申请日:1993-11-01
Applicant: DOW CORNING
Inventor: ECKSTEIN MARIE NORTON , BALLANCE DAVID STEPHEN
IPC: C23C16/22 , C23C16/12 , C23C16/27 , C23C16/40 , C23C16/42 , C23C16/511 , H01L21/316
Abstract: A method is described herein for depositing a coating containing silicon and oxygen on a substrate. The method comprises introducing a gas comprising hydrogen silsesquioxane into a deposition chamber containing the substrate and a reactive environment comprising nitrous oxide. Reaction of the gas is then induced to form the coating.
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