Monolithically-integrated infrared sensor
    12.
    发明公开
    Monolithically-integrated infrared sensor 有权
    Monolithisch integrierter Infrarots传感器

    公开(公告)号:EP1333504A2

    公开(公告)日:2003-08-06

    申请号:EP03075163.0

    申请日:2003-01-17

    CPC classification number: G01J5/14 G01J5/12

    Abstract: An integrated sensor (10) comprising a thermopile transducer (12) and signal processing circuitry (4) that are combined on a single semiconductor substrate (20), such that the transducer output signal is sampled in close vicinity by the processing circuitry (14). The sensor (10) comprises a frame (18) formed of a semiconductor material that is not heavily doped, and with which a diaphragm (16) is supported. The diaphragm (16) has a first surface for receiving thermal (e.g., infrared) radiation, and comprises multiple layers that include a sensing layer containing at least a pair of interlaced thermopiles (22). Each thermopile (22) comprises a sequence of thermocouples (24), each thermocouple (24) comprising dissimilar electrically-resistive materials that define hot junctions (26) located on the diaphragm (16) and cold junctions (28) located on the frame (18). The signal processing circuitry (14) is located on the frame (18) and electrically interconnected with the thermopiles (22). The thermopiles (22) are interlaced so that the output of one of the thermopiles (22) increases with increasing temperature difference between the hot and cold junctions (26,28) thereof, while the output of the second thermopile (22) decreases with increasing temperature difference between its hot and cold junctions (26,28).

    Abstract translation: 包括组合在单个半导体衬底(20)上的热电堆换能器(12)和信号处理电路(4)的集成传感器(10),使得所述换能器输出信号在所述处理电路(14)附近被采样, 。 传感器(10)包括由不重掺杂的半导体材料形成的框架(18),并且支撑有隔膜(16)。 隔膜(16)具有用于接收热(例如,红外线)辐射的第一表面,并且包括包含至少一对隔行热电堆(22)的感测层的多个层。 每个热电堆(22)包括一系列热电偶(24),每个热电偶(24)包括不同的电阻材料,其限定位于隔膜(16)上的热接点(26)和位于框架上的冷接点(28) 18)。 信号处理电路(14)位于框架(18)上并与热电堆(22)电互连。 热电堆(22)交错,使得其中一个热电堆(22)的输出随着热连接点(26,28)之间温差的增加而增加,而第二热电堆(22)的输出随着增加 其热连接点之间的温差(26,28)。

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