公开(公告)号：EP1965619A3

公开(公告)日：2009-12-23

申请号：EP08151443.2

申请日：2008-02-14

Applicant: Delphi Technologies, Inc.

Inventor： Brandenburg, Scott D. ,  Degenkolb, Thomas A. ,  Yeh, Shing

IPC: H05K7/20 ,  H01L23/40 ,  H05K7/10

CPC classification number: H05K7/2049 ,  H01L24/05 ,  H01L24/06 ,  H01L24/72 ,  H01L25/072 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00

Abstract: An improved vertical integrated circuit device package (10) that eliminates or reduces the need for wire bond connections and/or solder connections is provided. The package includes a vertical device (14) having electrodes (20,21) on opposite surfaces, and a compressed spring member (12c) that is used to establish compression electrical connections between the electrodes (20) and corresponding electrically conductive elements (24).

公开(公告)号：EP1725087A1

公开(公告)日：2006-11-22

申请号：EP06075962.8

申请日：2006-04-28

Applicant: Delphi Technologies, Inc.

Inventor： Kuhlman, Frederick F. ,  Carter, Bradley H. ,  Parker, Richard D. ,  Yeh, Shing

IPC: H05K3/34 ,  B23K35/02

CPC classification number: H05K3/3484 ,  H01L24/32 ,  H01L2224/29 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/341 ,  H05K3/3442 ,  H05K2201/0215 ,  H05K2201/0266 ,  H05K2201/2036 ,  Y02P70/613 ,  H01L2924/00

Abstract: An electronic assembly (200,400,400A) includes a bare IC die or a leadless electronic component (406A) having at least one electrically conductive contact formed on a surface of the die (106,406) or the component (406A) and a leadframe (102) or a substrate (402,402A) having at least one electrically conductive trace. The conductive contact of the component (406A) is electrically and mechanically coupled to the conductive trace with a solder joint (108,408). The solder joint (108,408) includes a plurality of solid electrically conductive metal particles (110,410) having a substantially spherical shape and a diameter ranging from about one mil to about ten mils.

Abstract translation: 电子组件的裸（200,400,400A）包括IC，或无引线电子元件具有形成在模具（106.406）或组分（406A）的一个表面上的至少一个导电接触，并且在引线框架（102）（406A），或 衬底（402,402A），其具有至少一个导电迹线。 组分（406A）的导电性触头的电和机械地耦合到与一个焊接接头（108.408）的导电迹线。 焊点（108.408）包括具有基本上球形的形状，并且直径范围从约1密耳至约10密耳固体导电金属颗粒（110.410）的复数。

公开(公告)号：EP1402989B1

公开(公告)日：2006-05-10

申请号：EP03078013.4

申请日：2003-09-23

Applicant: Delphi Technologies, Inc.

Inventor： Carter, Bradley H. ,  Yeh, Shing

IPC: B23K35/26 ,  B23K1/00 ,  H05K3/34

CPC classification number: C22C13/00 ,  B23K35/007 ,  B23K35/262 ,  B23K35/268 ,  B23K2201/36 ,  C22C11/00 ,  H05K1/092 ,  H05K3/3463 ,  Y10T428/12701 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/12896

公开(公告)号：EP0769346B1

公开(公告)日：2002-01-09

申请号：EP96202374.3

申请日：1996-08-26

Applicant: Delphi Technologies, Inc.

Inventor： Yeh, Shing ,  Carter, Bradley Howard

IPC: B23K35/14 ,  B23K35/26 ,  H05K3/34

CPC classification number: H01L24/10 ,  B23K35/025 ,  B23K35/268 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0272 ,  H05K2203/043 ,  H05K2203/0568 ,  H05K2203/0769 ,  H01L2924/00

公开(公告)号：EP0962275A2

公开(公告)日：1999-12-08

申请号：EP99201577.6

申请日：1999-05-19

Applicant: Delphi Technologies, Inc.

Inventor： Yeh, Shing ,  Jordan, Larry Lee ,  Duffer, Anthony Alan ,  Sparks, Douglas Ray ,  Beni, Ruth Ellen

IPC: B23K1/00 ,  H01L21/00

CPC classification number: B81C1/00269

Abstract: A method by which semiconductor wafers (10, 12) can be solder bonded to form a semiconductor device, such as a sensor with a micromachined structure (14). The method entails forming a solderable ring (18) on the mating surface of a device wafer (10), such that the solderable ring (18) circumscribes the micromachine (14) on the wafer (10). A solderable layer (20, 26, 28) is formed on a capping wafer (12), such that at least the mating surface (24) of the capping wafer (12) is entirely covered by the solderable layer (20, 26, 28). The solderable layer (20, 26, 28) can be formed by etching the mating surface (24) of the capping wafer (12) to form a recess (16) circumscribed by the mating surface (24), and then forming the solderable layer (26) to cover the mating surface (24) and the recess (16) of the capping wafer (12). Alternatively, the solderable layer (28) can be formed by depositing a solderable material to cover the entire lower surface of the capping wafer (12), patterning the resulting solderable layer (28) to form an etch mask on the capping wafer (12), and then to form the recess (16), such that the solderable layer (28) covers the mating surface (24) but not the surfaces of the recess (16).

Abstract translation: 可以将半导体晶片（10,12）焊接在一起以形成诸如具有微加工结构（14）的传感器的半导体器件的方法。 该方法需要在器件晶片（10）的配合表面上形成可焊接环（18），使得可焊接环（18）围绕晶片（10）上的微机械（14）。 在封盖晶片（12）上形成可焊层（20,26,28），使得封盖晶片（12）的至少配合表面（24）完全被可焊层（20,26,28）覆盖 ）。 可焊层（20,26,28）可以通过蚀刻封盖晶片（12）的配合表面（24）形成由配合表面（24）限定的凹陷（16），然后形成可焊层 （26）以覆盖封盖晶片（12）的配合表面（24）和凹部（16）。 或者，可焊层（28）可以通过沉积可焊接材料以覆盖封盖晶片（12）的整个下表面，形成所得到的可焊接层（28）以在封盖晶片（12）上形成蚀刻掩模 ，然后形成凹部（16），使得可焊接层（28）覆盖配合表面（24），而不覆盖凹部（16）的表面。