公开(公告)号：US11251328B2

公开(公告)日：2022-02-15

申请号：US16871303

申请日：2020-05-11

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/22 ,  H01L25/075 ,  H01L21/00

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

公开(公告)号：US20190259906A1

公开(公告)日：2019-08-22

申请号：US16405240

申请日：2019-05-07

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/46 ,  H01L33/38 ,  H01L33/22 ,  H01L21/00 ,  H01L33/62

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

公开(公告)号：US09887322B2

公开(公告)日：2018-02-06

申请号：US15342701

申请日：2016-11-03

Applicant: EPISTAR CORPORATION

Inventor： Ching-Huai Ni ,  Chia-Liang Hsu ,  Yi-Ming Chen

IPC: H01L31/12 ,  H01L27/32 ,  H01L33/38 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016

Abstract: A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface; wherein an upper surface of the buried electrode and the non-planar roughened surface of the first type semiconductor layer are substantially on the same plane.