公开(公告)号：US20210066390A1

公开(公告)日：2021-03-04

申请号：US17006459

申请日：2020-08-28

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Yu CHEN ,  Hui-Chun YEH ,  Chien-Fu SHEN

IPC: H01L27/15 ,  H01L33/38

Abstract: A light-emitting device, includes: a substrate, comprising a top surface; a first edge and a second edge opposite to the first edge; a plurality of light-emitting units arranged in N rows on the substrate, wherein the N rows comprises a first row at the first edge and a Nth row at the second edge; and a plurality of connection electrodes, formed on and electrically connecting the plurality of light-emitting units; wherein the plurality of light-emitting units comprises a first light-emitting unit in the first row, and the first light-emitting unit comprises a first notch on the first edge wherein the first notch comprises a bottom composed by the top surface.

公开(公告)号：US20200020839A1

公开(公告)日：2020-01-16

申请号：US16579218

申请日：2019-09-23

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Yu-Rui LIN ,  Chen OU ,  Hsin-Ying WANG ,  Hui-Chun YEH

IPC: H01L33/62

Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

公开(公告)号：US20190237624A1

公开(公告)日：2019-08-01

申请号：US16382873

申请日：2019-04-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/38 ,  H01L33/60 ,  H01L33/46 ,  H01L33/62 ,  H01L33/30 ,  H01L33/08 ,  H01L33/20

CPC classification number: H01L33/38 ,  H01L33/0012 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

公开(公告)号：US20170012167A1

公开(公告)日：2017-01-12

申请号：US15273439

申请日：2016-09-22

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/46

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 形成在半导体层序列中的多个斜面沟槽; 分别形成在所述多个倾斜沟槽中的多个突出结构; 形成在所述第二半导体层上的电介质层和所述多个斜面沟槽的内侧壁; 插入在所述半导体层序列和所述电介质层之间的反射层; 以及沿着所述多个倾斜沟槽的内侧壁形成的金属层，其中所述电介质层，所述反射层和所述金属层重叠，所述多个突出结构和所述反射层不重叠。

公开(公告)号：US20230361248A1

公开(公告)日：2023-11-09

申请号：US18223898

申请日：2023-07-19

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Hui-Chun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/14

CPC classification number: H01L33/38 ,  H01L33/32 ,  H01L33/0075 ,  H01L33/62 ,  H01L33/20 ,  H01L33/145 ,  H01L2933/0016

Abstract: A light-emitting device, includes a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, comprising a second core region under the second pad electrode and an extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the second core region; wherein in a top view, a contour of the second pad electrode has a circular shape and a contour of the second core region has a shape which is different from the circular shape and selected from square, rectangle, rounded rectangle, rhombus, trapezoid and polygon.

公开(公告)号：US20210020817A1

公开(公告)日：2021-01-21

申请号：US16985945

申请日：2020-08-05

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Yu-Rui LIN ,  Chen OU ,  Hsin-Ying WANG ,  Hui-Chun YEH

IPC: H01L33/62 ,  H01L33/20

Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.

公开(公告)号：US20200243598A1

公开(公告)日：2020-07-30

申请号：US16750227

申请日：2020-01-23

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun CHIU ,  Tsung-Hsun CHIANG ,  Liang-Sheng CHI ,  Jing JIANG ,  Jie CHEN ,  Tzung-Shiun YEH ,  Hsin-Ying WANG ,  Hui-Chun YEH ,  Chien-Fu SHEN

IPC: H01L27/15 ,  H01L33/62 ,  F21K9/00 ,  H01L33/36

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

公开(公告)号：US20190189850A1

公开(公告)日：2019-06-20

申请号：US16220444

申请日：2018-12-14

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Hui-Chun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/14 ,  H01L33/62 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62

Abstract: A light-emitting device, includes a first semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, including a second core region under the second pad electrode and a extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the extending region; wherein a contour of the second core region has a shape different from that of the second pad electrode; wherein the transparent conductive layer includes a first opening having a width wider than a width of the second pad electrode, wherein the second finger electrode includes a portion extending from the contour of the second pad electrode and having a width wider than other portion of the second finger electrode, and part of the portion is not covered by the transparent conductive layer.

公开(公告)号：US20180114880A1

公开(公告)日：2018-04-26

申请号：US15839160

申请日：2017-12-12

Applicant: EPISTAR CORPORATION

Inventor： Tsun-Kai KO ,  Schang-Jing HON ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  An-Ju LIN ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/06 ,  H01L33/22 ,  H01L33/14

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.

公开(公告)号：US20150060909A1

公开(公告)日：2015-03-05

申请号：US14013166

申请日：2013-08-29

Applicant: Epistar Corporation

Inventor： Juin-Yang CHEN ,  De-Shan KUO ,  Chun-Hsiang TU ,  Po-Shun CHIU ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  Min-Yen TSAI ,  Tsun-Kai KO ,  Chun-Teng KO

IPC: H01L33/44 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/42

Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.

Abstract translation: 发光器件包括：第一半导体层; 透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层; 以及形成在所述透明导电氧化物层上的金属层，其中所述金属层可透过从所述有源层发射的光并且包括图案。