-
公开(公告)号：US20230197904A1
公开(公告)日：2023-06-22
申请号：US18113344
申请日：2023-02-23
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
CPC classification number: H01L33/385 , H01L33/10 , H01L33/0075 , H01L33/32 , H01L33/46 , H01L33/24 , H01L25/0753 , H01L33/36
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
-
公开(公告)号：US20210296536A1
公开(公告)日：2021-09-23
申请号：US17202001
申请日：2021-03-15
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chao-Hsing CHEN , Chi-Ling LEE , Chen OU , Min-Hsun HSIEH
Abstract: A semiconductor light-emitting device includes: a substrate; a semiconductor stack on the substrate including a first semiconductor contact layer including an upper surface; a light-emitting stack including an active layer on the upper surface; a second semiconductor contact layer on the light-emitting stack; and a recessed region including part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on the substrate and the light-emitting stack; and a first and a second electrode pad on the substrate and electrically connected to the first semiconductor contact layer and the transparent electrode via first and second openings of the protective layer. A ratio of an area of the substrate to an area of the transparent electrode ranges from 2 to 100. A ratio of an operating current of the semiconductor light-emitting device to the area of the transparent electrode ranges from 10 mA/mm2 to 1000 mA/mm2.
-
公开(公告)号：US20160343909A1
公开(公告)日：2016-11-24
申请号：US15228529
申请日：2016-08-04
Applicant: EPISTAR CORPORATION
Inventor： Chien-Kai CHUNG , Po-Shun CHIU , Hsin-Ying WANG , De-Shan KUO , Tsun-Kai KO , Yu-Ting HUANG
CPC classification number: H01L33/22 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382
Abstract: A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.
Abstract translation: 发光装置包括：发光堆叠，包括第一侧，与第一侧相对的第二侧，连接第一侧和第二侧的第三侧以及第一侧和第二侧之间的上表面 ; 形成在上表面上的第一电极焊盘; 形成在所述上表面上的第二电极焊盘，其中所述第一电极焊盘比所述第二电极焊盘更靠近所述第一侧; 以及第一延伸电极，其包括从远离所述第三侧的方向从所述第一电极焊盘延伸的第一部分，以及连接到所述第一部分并垂直于所述第一侧的第二部分; 其中所述第一电极焊盘和所述第三侧之间的距离小于所述第二电极焊盘和所述第三侧之间的距离。
-
公开(公告)号：US20250126936A1
公开(公告)日：2025-04-17
申请号：US18984418
申请日：2024-12-17
Applicant: EPISTAR CORPORATION
Inventor： Jhih-Yong YANG , Hsin-Ying WANG , De-Shan KUO , Chao-Hsing CHEN , Yi-Hung LIN , Meng-Hsiang HONG , Kuo-Ching HUNG , Cheng-Lin LU
IPC: H10H20/841 , H10H20/814 , H10H20/831 , H10H20/857 , H10H29/14
Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the second reflective structure are disposed between the lower protective layer and the upper protective layer.
-
公开(公告)号：US20240372053A1
公开(公告)日：2024-11-07
申请号：US18654733
申请日：2024-05-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Jhih-Yong YANG , Chien-Chih LIAO , Chao-Hsing CHEN , Jheng-Long HUANG , Ching-Hsing SHEN , Hui-Fang KAO
Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer and a plurality of mesas spaced apart from each other on the first semiconductor layer, wherein the plurality of mesas each includes a second semiconductor layer, the first semiconductor layer and the second semiconductor layer have different conductivity types; a contact metal formed on the semiconductor stack, including a plurality of first contact parts located between the mesas and electrically connected to the first semiconductor layer, and a plurality of second contact parts located on the mesas and electrically connected to the second semiconductor layer; a first insulating structure formed on the contact metal, including a plurality of first openings corresponding to the first contact parts and a plurality of second openings corresponding to the second contact parts; a current spreading electrode formed on the first insulating structure, including a first current spreader and a plurality of second current spreaders, wherein the first current spreader is located between the mesas and filled in the first openings to connect the first contact parts and the second current spreaders are formed on the mesas and filled in the second openings to connect the second contact parts; a second insulating structure formed on the current spreading electrode, including a third opening on the first current spreader and a plurality of fourth openings formed on the second current spreaders; and an electrode pad structure formed on the second insulating structure, including at least one first electrode pad filled in the third opening to connect to the first current spreader, and a plurality of second electrode pads filled in the fourth openings to connect the second current spreaders.
-
Patent Agency Ranking
公开(公告)号：US20240014352A1
公开(公告)日：2024-01-11
申请号：US18370649
申请日：2023-09-20
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
CPC classification number: H01L33/385 , H01L33/10 , H01L33/0075 , H01L33/32 , H01L33/46 , H01L33/24 , H01L25/0753 , H01L33/36
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
-
公开(公告)号：US20230005984A1
公开(公告)日：2023-01-05
申请号：US17901655
申请日：2022-09-01
Applicant: EPISTAR CORPORATION
Inventor： Po-Shun CHIU , Tsung-Hsun CHIANG , Liang-Sheng CHI , Jing JIANG , Jie CHEN , Tzung- Shiun YEH , Hsin-Ying WANG , Hui-Chun YEH , Chien-Fu SHEN
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
-
公开(公告)号：US20210343913A1
公开(公告)日：2021-11-04
申请号：US17306141
申请日：2021-05-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chih-Hao CHEN , Chien-Chih LIAO , Chao-Hsing CHEN , Wu-Tsung LO , Tsun-Kai KO , Chen OU
Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.
-
公开(公告)号：US20210336090A1
公开(公告)日：2021-10-28
申请号：US17237825
申请日：2021-04-22
Applicant: EPISTAR CORPORATION
Inventor： Jhih-Yong YANG , Hsin-Ying WANG , De-Shan KUO , Chao-Hsing CHEN , Yi-Hung LIN , Meng-Hsiang HONG , Kuo-Ching HUNG , Cheng-Lin LU
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.
-
公开(公告)号：US20210273137A1
公开(公告)日：2021-09-02
申请号：US17321078
申请日：2021-05-14
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device;
and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
-
-
-
-
-
-
-
-
-
Search Results
32
records
(took 0.024 seconds)
