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    Light-emitting device with reflective layer
    14.
    发明授权
    Light-emitting device with reflective layer 有权

    公开(公告)号：US10680136B2

    公开(公告)日：2020-06-09

    申请号：US16416488

    申请日：2019-05-20

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

    IPC: H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

    LIGHT-EMITTING ELEMENT
    15.
    发明申请
    LIGHT-EMITTING ELEMENT 审中-公开

    公开(公告)号：US20190074409A1

    公开(公告)日：2019-03-07

    申请号：US16182241

    申请日：2018-11-06

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

    IPC: H01L33/44 ,  H01L33/40 ,  H01L33/02 ,  H01L33/62 ,  H01L33/38 ,  H01L23/00

    Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

    Light-emitting device
    16.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10217906B2

    公开(公告)日：2019-02-26

    申请号：US15880067

    申请日：2018-01-25

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Wen-Hung Chuang ,  Cheng-Lin Lu

    IPC: H01L33/62 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/00 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.

    Light-emitting device
    19.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11658269B2

    公开(公告)日：2023-05-23

    申请号：US17206647

    申请日：2021-03-19

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

    IPC: H01L33/46 ,  H01L33/38 ,  H01L33/40

    CPC classification number: H01L33/46 ,  H01L33/382 ,  H01L33/38 ,  H01L33/405

    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

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