公开(公告)号：US20240162375A1

公开(公告)日：2024-05-16

申请号：US18498722

申请日：2023-10-31

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Yong-Yang CHEN ,  Yu-Ling LIN ,  Wei-Chen TSAO

IPC: H01L33/10 ,  H01L33/36

CPC classification number: H01L33/10 ,  H01L33/36

Abstract: A light-emitting device comprises a first semiconductor layer and a semiconductor mesa formed on the first semiconductor layer, wherein the first semiconductor layer comprises a first sidewall and a first semiconductor layer first surface surrounding the semiconductor mesa, and the semiconductor mesa comprises a second sidewall; and a first reflective structure comprising a first reflective portion covering the first sidewall and a second reflective portion covering the second sidewall, wherein the first reflective portion and the second reflective portion are connected to form a first reflective structure outer opening to expose the first semiconductor layer first surface in a top view of the light-emitting device.

公开(公告)号：US20190245116A1

公开(公告)日：2019-08-08

申请号：US16384890

申请日：2019-04-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US20180233631A1

公开(公告)日：2018-08-16

申请号：US15948738

申请日：2018-04-09

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US20240421249A1

公开(公告)日：2024-12-19

申请号：US18740925

申请日：2024-06-12

Applicant: EPISTAR CORPORATION

Inventor： Meng-Hsiang HONG ,  Yu-Ling LIN ,  Chao-Hsing CHEN ,  Chen OU ,  Chien-Ya HUNG

IPC: H01L33/10 ,  H01L33/38 ,  H01L33/62

Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface; a contact electrode covering the second semiconductor layer and comprising a first side surface; an insulating reflective structure covering the contact electrode and comprising a plurality of insulating reflective structure openings; a connection layer covering the insulating reflective structure and filling into the plurality of insulating reflective structure openings, and comprising a second side surface; and a metal reflective layer covering the connection layer and filling into the plurality of insulating reflective structure openings, and comprising a third side surface; wherein in a cross-sectional view of the light-emitting device, a first pitch is between the first side surface and the inclined surface, a third pitch is between the third side surface and the inclined surface, and the third pitch is smaller than the first pitch.

公开(公告)号：US20240136472A1

公开(公告)日：2024-04-25

申请号：US18401106

申请日：2023-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Tsung-Hsun CHIANG ,  Bo-Jiun HU ,  Wen-Hung CHUANG ,  Yu-Ling LIN

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/0012 ,  H01L33/02

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US20220231196A1

公开(公告)日：2022-07-21

申请号：US17712690

申请日：2022-04-04

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Tsung-Hsun CHIANG ,  Bo-Jiun HU ,  Wen-Hung CHUANG ,  Yu-Ling LIN

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/10 ,  H01L33/42 ,  H01L33/24 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, wherein a spacing between two adjacent vias in the first row is different from a spacing between two adjacent vias in the second row.

公开(公告)号：US20200295233A1

公开(公告)日：2020-09-17

申请号：US16891670

申请日：2020-06-03

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.

公开(公告)号：US20200020739A1

公开(公告)日：2020-01-16

申请号：US16510388

申请日：2019-07-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  I-Lun MA ,  Bo-Jiun HU ,  Yu-Ling LIN ,  Chien-Chih LIAO

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/42

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US20180145228A1

公开(公告)日：2018-05-24

申请号：US15858534

申请日：2017-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.