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公开(公告)号：US20210313388A1
公开(公告)日：2021-10-07
申请号：US17348080
申请日：2021-06-15
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , I-Lun MA , Bo-Jiun HU , Yu-Ling LIN , Chien-Chih LIAO
Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.
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公开(公告)号：US20210273137A1
公开(公告)日：2021-09-02
申请号：US17321078
申请日：2021-05-14
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device;
and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.-
公开(公告)号：US20200044116A1
公开(公告)日：2020-02-06
申请号：US16529370
申请日：2019-08-01
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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Patent Agency Ranking
公开(公告)号：US20240014352A1
公开(公告)日：2024-01-11
申请号：US18370649
申请日：2023-09-20
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
CPC classification number: H01L33/385 , H01L33/10 , H01L33/0075 , H01L33/32 , H01L33/46 , H01L33/24 , H01L25/0753 , H01L33/36
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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公开(公告)号：US20200020739A1
公开(公告)日：2020-01-16
申请号：US16510388
申请日：2019-07-12
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , I-Lun MA , Bo-Jiun HU , Yu-Ling LIN , Chien-Chih LIAO
Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.
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公开(公告)号：US20240194724A1
公开(公告)日：2024-06-13
申请号：US18442843
申请日：2024-02-15
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , I-Lun MA , Bo-Jiun HU , Yu-Ling LIN , Chien-Chih LIAO
IPC: H01L27/15 , H01L33/00 , H01L33/12 , H01L33/24 , H01L33/30 , H01L33/38 , H01L33/42 , H01L33/46 , H01L33/62
CPC classification number: H01L27/156 , H01L33/24 , H01L33/385 , H01L33/0075 , H01L33/0093 , H01L33/12 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.
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公开(公告)号：US20230197904A1
公开(公告)日：2023-06-22
申请号：US18113344
申请日：2023-02-23
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
CPC classification number: H01L33/385 , H01L33/10 , H01L33/0075 , H01L33/32 , H01L33/46 , H01L33/24 , H01L25/0753 , H01L33/36
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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公开(公告)号：US20180062043A1
公开(公告)日：2018-03-01
申请号：US15686314
申请日：2017-08-25
Applicant: EPISTAR CORPORATION
Inventor： Chang-Tai HISAO , I-Lun MA , Hao-Yu CHEN , Shu-Fen HU , Ru-Shi LIU , Chih-Ming WANG , Chun-Yuan CHEN , Yih-Hua RENN , Chien-Hsin WANG , Yung-Hsiang LIN
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.
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