公开(公告)号：US20240162375A1

公开(公告)日：2024-05-16

申请号：US18498722

申请日：2023-10-31

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Yong-Yang CHEN ,  Yu-Ling LIN ,  Wei-Chen TSAO

IPC: H01L33/10 ,  H01L33/36

CPC classification number: H01L33/10 ,  H01L33/36

Abstract: A light-emitting device comprises a first semiconductor layer and a semiconductor mesa formed on the first semiconductor layer, wherein the first semiconductor layer comprises a first sidewall and a first semiconductor layer first surface surrounding the semiconductor mesa, and the semiconductor mesa comprises a second sidewall; and a first reflective structure comprising a first reflective portion covering the first sidewall and a second reflective portion covering the second sidewall, wherein the first reflective portion and the second reflective portion are connected to form a first reflective structure outer opening to expose the first semiconductor layer first surface in a top view of the light-emitting device.

公开(公告)号：US20240339564A1

公开(公告)日：2024-10-10

申请号：US18625617

申请日：2024-04-03

Applicant: EPISTAR CORPORATION

Inventor： Wei-Che WU ,  Chih-Hao CHEN ,  Yu-Ling LIN ,  Chao-Hsing CHEN ,  Yong-Yang CHEN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/60

Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

公开(公告)号：US20210202571A1

公开(公告)日：2021-07-01

申请号：US17138335

申请日：2020-12-30

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Yong-Yang CHEN

IPC: H01L27/15

Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emitting unit without covering the first insulating layer opening on the second light-emitting unit; a first electrode pad covering a part of the plurality of the light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units.

公开(公告)号：US20230317765A1

公开(公告)日：2023-10-05

申请号：US18128327

申请日：2023-03-30

Applicant: EPISTAR CORPORATION

Inventor： Yong-Yang CHEN ,  Chao-Hsing CHEN ,  Chi-Shiang HSU

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light-emitting device comprises a plurality of light-emitting elements, comprising a first group light-emitting elements and a second group light-emitting elements; a trench separating the plurality of light-emitting units; a first electrode pad covering the first group light-emitting elements and located on the trench; a second electrode pad covering the second group light-emitting elements and located on the trench; and a cavity located on the trench, formed between the first electrode pad and the protective layer or formed between the second electrode pad and the protective layer.

公开(公告)号：US20230215998A1

公开(公告)日：2023-07-06

申请号：US18089727

申请日：2022-12-28

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Meng-Hsiang HONG ,  Chi-Shiang HSU ,  Yen-Liang KUO ,  Chien-Ya HUNG ,  Yong-Yang CHEN ,  Yu-Ling LIN ,  Xue-Cheng YAO

IPC: H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/405 ,  H01L33/38 ,  H01L33/32

Abstract: A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.

公开(公告)号：US20220367562A1

公开(公告)日：2022-11-17

申请号：US17875068

申请日：2022-07-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Yong-Yang CHEN

IPC: H01L27/15

Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emitting unit without covering the first insulating layer opening on the second light-emitting unit; a first electrode pad covering a part of the plurality of the light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units.