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    VERTICALLY INTEGRATED MEMS
    12.
    发明申请
    VERTICALLY INTEGRATED MEMS 审中-公开
    垂直集成MEMS

    公开(公告)号：WO2008051781A3

    公开(公告)日：2008-07-31

    申请号：PCT/US2007081734

    申请日：2007-10-18

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  RAMAMOORTHI SRIRAM ,  MILLIGAN DONALD J

    Inventor： RAMAMOORTHI SRIRAM ,  MILLIGAN DONALD J

    IPC: B81C1/00 ,  B81C3/00

    CPC classification number: B81C1/00253 ,  B81B2201/0235 ,  B81B2203/051 ,  B81B2203/053 ,  B81C1/00142 ,  B81C3/004 ,  B81C2201/019 ,  B81C2203/058

    Abstract: The present specification discloses an exemplary system and method for forming a micro-electro mechanical system (MEMS) transducer. According to one exemplary embodiment disclosed herein, the MEMS transducer is formed from two wafers and decouples the thickness of the proof mass and flexures, thereby allowing each to be independently designed. Additionally, the present exemplary system and method etches both sides of the wafer defining the flexures and the proof mass, allowing for optical alignment of the top and bottom wafers.

    Abstract translation: 本说明书公开了一种用于形成微机电系统（MEMS）换能器的示例性系统和方法。 根据本文公开的一个示例性实施例，MEMS换能器由两个晶片形成，并且使得证明块的厚度和挠曲力分离，从而允许每个独立设计。 另外，本示例性系统和方法蚀刻晶片的两侧，限定弯曲和检测质量，允许顶部和底部晶片的光学对准。

    NANOSTRUCTURE ANTIREFLECTION SURFACES
    14.
    发明申请
    NANOSTRUCTURE ANTIREFLECTION SURFACES 审中-公开
    纳米结构抗反射表面

    公开(公告)号：WO2006085977A3

    公开(公告)日：2006-10-05

    申请号：PCT/US2005023924

    申请日：2005-07-06

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  PIEHL ARTHUR ,  RAMAMOORTHI SRIRAM ,  GARDNER DANIEL C

    Inventor： PIEHL ARTHUR ,  RAMAMOORTHI SRIRAM ,  GARDNER DANIEL C

    IPC: G02B1/11

    CPC classification number: B82Y30/00 ,  B82Y20/00 ,  G02B1/11 ,  G02B1/111 ,  G02B1/113

    Abstract: An antireflection surface formed using a plurality of nanostructures of a first material on a surface of a second material. The first material is different from the second material. The distribution of spacial periods of the nanostructures is set by a self-assembly operation. The surface of the second material is converted to operate as a graded index surface that is substantially antireflective for the wavelength of interest.

    Abstract translation: 使用在第二材料的表面上的第一材料的多个纳米结构形成的抗反射表面。 第一种材料与第二种材料不同。 纳米结构的空间周期分布由自组装操作设定。 第二材料的表面被转换为对于感兴趣的波长基本上是防反射的梯度折射率表面。

    MISALIGNMENT-TOLERANT MULTIPLEXING/DEMULTIPLEXING ARCHITECTURES
    15.
    发明申请
    MISALIGNMENT-TOLERANT MULTIPLEXING/DEMULTIPLEXING ARCHITECTURES 审中-公开
    偏差多重复用/解复用架构

    公开(公告)号：WO2005112125A3

    公开(公告)日：2006-01-19

    申请号：PCT/US2005014263

    申请日：2005-04-25

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  YANG XIAOFENG ,  RAMAMOORTHI SRIRAM ,  KAWAMOTO GALEN H

    Inventor： YANG XIAOFENG ,  RAMAMOORTHI SRIRAM ,  KAWAMOTO GALEN H

    IPC: H01L23/525 ,  H01L29/76 ,  G11C8/00 ,  H01L21/768

    CPC classification number: G11C13/0069 ,  G11C2013/0078 ,  H01L23/525 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: This disclosure relates to misalignment-tolerant multiplexing/demultiplexing architectures (1306). One architecture (1306) enables communication with a conductive-structure array (1102) having a narrow spacing and pitch (808). Another architecture (1306) can comprise address elements (810) having a width (806) substantially identical to that of conductive-structures (1104) with which each of these address elements (810) is capable of communicating. Another architecture (1306) can comprise rows (1402) of co-parallel address elements (810) oriented obliquely relative to address lines (1304) and/or conductive structures (1104).

    Abstract translation: 本公开涉及不对准容许复用/解复用架构（1306）。 一个架构（1306）使得能够与具有窄间距和间距（808）的导电结构阵列（1102）进行通信。 另一个架构（1306）可以包括具有与导电结构（1104）基本相同的宽度（806）的地址元件（810），这些地址元件（810）能够与之通信。 另一架构（1306）可以包括相对于地址线（1304）和/或导电结构（1104）倾斜定向的并行地址单元（810）的行（1402）。

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