公开(公告)号：DE10307518B4

公开(公告)日：2011-04-14

申请号：DE10307518

申请日：2003-02-21

Applicant: HOYA CORP

Inventor： SHIOTA YUUKI ,  NOZAWA OSAMU ,  OHKUBO RYO ,  MITSUI HIDEAKI

IPC: B32B3/10 ,  B32B9/04 ,  B32B15/00 ,  B32B17/06 ,  B44C1/22 ,  C25F3/00 ,  G03F1/00

公开(公告)号：DE10144894B4

公开(公告)日：2011-04-14

申请号：DE10144894

申请日：2001-09-12

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  MITSUI MASARU ,  MITSUI HIDEAKI

IPC: B32B17/06 ,  C03C17/22 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027

公开(公告)号：DE10144893B4

公开(公告)日：2011-03-24

申请号：DE10144893

申请日：2001-09-12

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027

公开(公告)号：DE10144893A1

公开(公告)日：2002-05-29

申请号：DE10144893

申请日：2001-09-12

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/14

Abstract: An object of the present invention is to provide a half-tone phase shift mask blank and a half-tone phase shift mask of which a translucent film has improved acid resistance, alkali resistance and resistance to excimer laser irradiation while maintaining the internal stress of the film within an acceptable range for the intended use. To achieve the aforementioned object, the present invention provides a half-tone phase shift mask blank which comprises a transparent substrate having provided thereon a translucent film comprising at least one thin layer containing silicon and at least one of nitrogen and oxygen and which is to be exposed to light whose center wavelength is 248 nm or shorter, wherein said translucent film is dense such that it has a center-line surface roughness (Ra) of 0.3 nm or smaller.

公开(公告)号：DE112004000235B4

公开(公告)日：2018-12-27

申请号：DE112004000235

申请日：2004-02-02

Applicant: HOYA CORP

Inventor： KUREISHI MITSUHIRO ,  MITSUI HIDEAKI

IPC: G03F1/50 ,  C23C14/06 ,  G03F1/32 ,  G03F1/46 ,  G03F1/54 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027

Abstract: Fotomasken-Rohling (1) mit einem einlagigen oder mehrlagigen lichtabschirmenden Film (3), der ein Metall enthält, auf einem lichtdurchlässigen Substrat (2), umfassend:eine Phasenverschiebungsschicht zwischen dem lichtdurchlässigen Substrat (2) und dem lichtabschirmenden Film (3),einen Antireflexions-Film (6), der mindestens Silizium und Sauerstoff und/oder Stickstoff enthält, auf dem lichtabschirmenden Film (3),wobei der Antireflexions-Film (6) einem Trockenätzen unter Verwendung von Fluor-Gas unterworfen werden kann und aus einem Material mit Widerstandseigenschaften in Bezug auf das Ätzen des Licht abschirmenden Films (3) hergestellt ist und der lichtabschirmende Film (3) aus einem auf Chrom basierenden Material oder einem auf Tantal basierenden Material hergestellt ist und einem Trockenätzen unterzogen werden kann unter Verwendung eines auf Chlor basierenden Gases.

公开(公告)号：DE112004000235T5

公开(公告)日：2006-01-12

申请号：DE112004000235

申请日：2004-02-02

Applicant: HOYA CORP

Inventor： KUREISHI MITSUHIRO ,  MITSUI HIDEAKI

IPC: C23C14/06 ,  G03F1/32 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027

Abstract: A low reflective photomask blank suitable for shortened exposure wavelengths is disclosed. A photomask blank (1) having a single-layer or multilayer light-shielding film (3) arranged on a translucent substrate (2) and mainly containing a metal is characterized by comprising an antireflective film (6), which at least contains silicon and oxygen and/or nitrogen, on the light-shielding film (3).

公开(公告)号：DE69523165T2

公开(公告)日：2002-05-29

申请号：DE69523165

申请日：1995-07-19

Applicant: HOYA CORP

Inventor： MITSUI HIDEAKI ,  MATSUMOTO KENJI ,  YAMAGUCHI YOICHI

IPC: F02G5/00 ,  F02M45/04 ,  F02M47/00 ,  F02M47/02 ,  F02M51/06 ,  F02M57/02 ,  F02M59/10 ,  F02M59/36 ,  F02M59/46 ,  F02M63/00 ,  G03F1/00 ,  G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08 ,  H01L21/30

Abstract: The present invention is concerned with a phase-shift mask blank having a light semi-transmitting film which at least contains a transition metal selected from tungsten, tantalum, chromium or titanium, silicon and nitrogen on a transparent substrate, the light semi-transmitting film containing 5 to 70 at% of nitrogen, and an excellent phase-shift mask can be obtained by patterning the light semi-transmitting film of the phase-shift mask blank of the present invention since the light semi-transmitting film has a small surface roughness (nmRa).

公开(公告)号：DE10144894A1

公开(公告)日：2002-05-23

申请号：DE10144894

申请日：2001-09-12

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  MITSUI MASARU ,  MITSUI HIDEAKI

IPC: B32B17/06 ,  C03C17/22 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027 ,  G03F1/14

Abstract: A thermal treatment of a translucent film is carried out at a 15 deg C after forming the translucent film on a transparent substrate. The translucent film has a thin film of nitrogen, metal and silicon as main components. Independent claims are included for the following: (1) Photo mask manufacturing method; (2) Pattern transcription method; (3) Mask blank; (4) Photo mask; (5) Method of manufacturing half tone type phase shaft mask; and (6) Half tone type shift mask.

公开(公告)号：DE10028644A1

公开(公告)日：2001-01-18

申请号：DE10028644

申请日：2000-06-09

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  MITSUI HIDEAKI ,  TAKEUCHI MEGUMI

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/08

Abstract: Half tone phase shift mask green body is produced by forming a transparent film which produces a predetermined extent of phase difference with respect to light passing directly through a transparent substrate and weakens the light intensity on the substrate. The transparent film contains silicon, palladium and one of nitrogen, oxygen or hydrogen.

公开(公告)号：JP2009163264A

公开(公告)日：2009-07-23

申请号：JP2009102116

申请日：2009-04-20

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： KUREISHI MITSUHIRO ,  MITSUI HIDEAKI

IPC: C23C14/06 ,  G03F1/32 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/46 ,  G03F1/50 ,  G03F1/54 ,  G03F1/58

Abstract: PROBLEM TO BE SOLVED: To provide a low reflective photomask blank suitable for shortened exposure wavelength.
SOLUTION: A photomask blank includes a single layer or multilayer light-shielding film 3, arranged on a translucent substrate 2 and mainly containing metals. The photomask blank is used for manufacturing a photomask which is to be subjected to exposure at a wavelength of not more than 200 nm. The photomask blank has an antireflection film 6, containing at least silicon and oxygen and/or nitrogen, on the light-shielding film 3; and the light-shielding film 3 is made of a material having etching durability, with respect to etching in the antireflection film 6.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供适合于缩短曝光波长的低反射光掩模坯料。 解决方案：光掩模坯料包括设置在半透明基板2上并主要包含金属的单层或多层遮光膜3。 光掩模坯料用于制造将在不超过200nm的波长下进行曝光的光掩模。 光掩模坯料具有在遮光膜3上至少含有硅和氧和/或氮的抗反射膜6; 相对于防反射膜6中的蚀刻，遮光膜3由具有蚀刻耐久性的材料制成。（C）2009，JPO＆INPIT