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    12.
    发明专利
    未知

    公开(公告)号：DE1639263B1

    公开(公告)日：1971-08-26

    申请号：DEJ0035441

    申请日：1968-01-08

    Applicant: IBM

    Inventor： BARSON FRED ,  KUEHN RICHARD THEODORE ,  PALMER MYRON DOUGLAS

    IPC: H01L21/00 ,  H01L21/033 ,  H01L23/29 ,  H01L23/485 ,  G03C5/06

    Abstract: 1,203,341. Etching. INTERNATIONAL BUSINESS MACHINES CORP. 4 Jan., 1968 [9 Jan., 1967], No. 662/68. Heading B6J. [Also in Division H1] An opening is etched in a film by forming a first layer of photoresist on the film, exposing the layer through a first mask to form a first pattern, thereafter exposing the first layer, or a second layer formed over the first layer, through a second mask to form a second pattern which overlaps the first pattern, the area of overlap defining the opening developing the layer(s) and etching the exposed surface of the film. The film may be an insulating layer 12 (e.g. silicon or germanium oxide, silicon nitride, alumina or glass) provided on a semi-conductor substrate 10 (e.g. silicon or germanium). A first photoresist layer 14 is exposed thzough a first mask and developed to produce a first aperture 16 and a second photoresist layer 18 is exposed through a second mask and developed to produce a second aperture 22. The exposed area of layer 12 is etched (e.g. with buffered H.F.). The aperture defined by the second mask may be larger than that defined by the first mask (e.g. the second aperture may encompass two smaller first apertures). In an alternative procedure a single photoresist layer may be exposed successively through first and second masks. The photoresist may be stripped from the etched layer 12 and a P or N region 26 diffused in to provide a collector, base or emitter region or an isolation or inversion preventing region. In a further example, Fig. 2, two photoresist layers 14A and 18A are exposed through separate masks as above to produce an aperture 22A in an insulating layer 12A composed of glasses or silicates. The aperture permits a metal contact 28A to be provided and to form a terminal contact to a metal land 13 which is in ohmic contact with a semi-conductor region 10A.

    16.
    发明专利
    未知

    公开(公告)号：DE1194061B

    公开(公告)日：1965-06-03

    申请号：DEJ0019829

    申请日：1961-04-27

    Applicant: IBM

    Inventor： BARSON FRED ,  GOW JOHN

    IPC: H01L21/00 ,  H01L29/00 ,  H03K17/73

    Abstract: 917,646. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. April 5, 1961 [April 28, 1959], No. 12111/61. Class 37. In a method of making a PNPN device of the general kind described and claimed in Specification 917,645, in which the PNP section has a low α while the NPN section has a comparatively high α, a semi-conductor body of one conductivity type is contacted by a first pellet containing an impurity characteristic of the opposite conductivity type and heated to a first temperature above the melting-point of the pellet but below that of the body, to cause the pellet to melt and dissolve the adjacent region of the body and to cause impurity atoms to diffuse beyond said region, so that, when cooled, the body comprises contiguous diffused and recrystallized zones of the said opposite conductivity type; then a second pellet containing an impurity characteristic of said one conductivity type is placed in contact with the first pellet and the assembly is heated to a second temperature above the melting-points of the pellets but below the first temperature, so that the conductivity type of a portion of the said recrystallized region is changed. As shown, Fig. 2, a pellet 25 comprising 90% Pb, 10% Sb, and a ring 22 comprising 98% Pb, 2% In, are placed in contact with one surface of a wafer 16 of P-type Ge ; a pellet 24 comprising 98.25% Pb, 1.75% Sb, is placed in contact with the opposite surface of the wafer 16 ; and the assembly is heated in an inert or reducing atmosphere to 750-800‹ C. for about 1 hour. The pellets and ring melt and dissolve adjacent regions of the wafer; moreover, Sb atoms from the pellets diffuse into the body of the wafer so that, on cooling, N-type regions 11, 17 are formed, the former being made up of a recrystallized region 12 adjacent a diffused region 13, and the latter being made up of a recrystallized region 19 adjacent a diffused region 18. A further pellet, not shown, comprising lead with a small quantity of Ga is placed on pellet 24 and the assembly is heated to about 50 ‹ C. lower than the previous alloying temperature, e.g. 700‹ C., for 10 minutes, during which time the further pellet and pellet 24 melt and dissolve part of recrystallized region 12. Upon cooling, a P-type region 15, Fig. 1, appears between region 12 and the pellet 24. Subsequently, a comparatively massive heatdissipating conductor 21 is bonded to pellet 24 and lead-wires 40, 23 to ohmic ring 22 and pellet 25, respectively. The device is then electrolytically etched in an alkali bath to reduce the size of the pellets, expose the peripheries of PN junctions 27, 28, 30, and create annular recesses 26, 41. The low α desired for the PNP section 15, 11, 16 is attained by controlling the width of the recrystallized N-type region 12, thus permitting a higher γ for P-type region 15 and reducing the impedance of the junction 30. In Fig. 4, the PNPN device 10 is used as a switching means for controlling the flow of current through a relay winding 33, P-type region 16 serving as the controllable base zone. Junction 27 is reverse biased by a small voltage from battery 31; a small positive-going pulse from generator 34 renders the device conductive. The device may alternatively comprise Si, Si-Ge alloy, or a semi-conductor intermetallic compound, and an additional electrode may be added to N-type region 11.

    17.
    发明专利
    未知

    公开(公告)号：DE1764313B1

    公开(公告)日：1972-05-25

    申请号：DE1764313

    申请日：1968-05-15

    Applicant: IBM

    Inventor： BARSON FRED ,  ABHIMANYU DHAKA VIR

    IPC: H01L21/00 ,  H01L23/29 ,  H01L7/44

    Abstract: 1,194,113. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 7 May, 1968 [18 May, 1967], No. 21553/68. Heading H1K. A method of fabricating a transistor having a complex base region of relatively active and relatively inactive parts comprises defining, by means of an aperture in an insulating layer 11 of silicon dioxide on a semi-conductor substrate 10 containing an impurity of the one type conductivity, that part where the complex base is to be, and forming on the exposed substrate surface, over that part which is to be the relatively inactive base region, a layer 15 of silicon dioxide doped with an impurity of the opposite type conductivity to leave uncovered that part 14 where the relatively active base region is to be. The coated substrate 10 is then heated to diffuse the impurity from the layer 15 into the substrate to form the relatively inactive base region 16. Then a further impurity of the opposite type conductivity is diffused through the uncovered portion 14 to form the relatively active base region 17. Finally an impurity of the one type conductivity is diffused through the same portion 14 to a lesser depth to form the emitter 18.

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