公开(公告)号：DE3121666A1

公开(公告)日：1982-12-16

申请号：DE3121666

申请日：1981-05-30

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  MUEHL REINHOLD ,  NEHMIZ PETER DR ,  TRUMPP HANS-JOACHIM DR

IPC: G03B27/32 ,  G02B27/00 ,  G03F7/20 ,  G03F9/00 ,  H01J37/20 ,  H01J37/304 ,  H01L21/027 ,  H01L21/26 ,  H01L21/42 ,  H01L21/68 ,  H05K3/10 ,  H01L21/308

Abstract: For mutually aligning (registering) mask and substrate in X- or corpuscular ray lithography, an electron beam (16) is used which extends collaterally to the exposure beam (ion beam or X-ray) and which is suppressed during the actual exposure process. For coupling the electron beam to the exposure beam path, a magnetic field (7) is used. The accurate relative position of mask and substrate is determined during alignment by tilting the electron beam. Fine alignment during exposure is effected by suitably tilting the ion beam or shifting the substrate relative to the X-ray. The mask (10) used for exposure consists of a very thin silicon layer with a pattern area (M) and a registration area (R) spatially separated therefrom. The registration area consists of a plurality of openings, the pattern area of blind holes.

公开(公告)号：DE2963367D1

公开(公告)日：1982-09-09

申请号：DE2963367

申请日：1979-07-31

Applicant: IBM

Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  KULCKE WERNER DR ,  NEHMIZ PETER DR

IPC: H01L21/027 ,  H01J37/30 ,  H01J37/304 ,  H01L21/263 ,  H01L21/423