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公开(公告)号：JP2002098713A
公开(公告)日：2002-04-05
申请号：JP2001218755
申请日：2001-07-18
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , MEISSNER KLAUS , STEINER WERNER , STOEHR ROLAND
Abstract: PROBLEM TO BE SOLVED: To provide a contact probe arrangement 1 for connecting electrically a test device to circular contact pads 2 of a device 3 to be tested. SOLUTION: The contact probes 4 are pressed perpendicularly onto the contact pads 2 in order to realize a low contact resistance, and can be bent in the transverse direction in regions 6a, 6b where the contact probes are installed in order to adjust the difference of heights of the contact pads 2 caused by a non-uniform surface of the device 3 to be tested. The contact probes 4 are installed in a guide groove 5. The guide groove 5 and the regions 6a, 6b are formed on a plane parallel to the plane of a guide groove 7, and covered with a protection plate. This constitution assures a contact probe array having a very high density. This kind of contact probe array can be used, for example, for detecting open and short in an electric circuit array of a microelectronic composite device.
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公开(公告)号：JPH1082794A
公开(公告)日：1998-03-31
申请号：JP14767297
申请日：1997-06-05
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , WEISS HELGA
Abstract: PROBLEM TO BE SOLVED: To provide a micro-mechanical sensor for measuring shape with an atomic force microscopic microscope(AFM)/a scanning tunnel microscope(STM) which has sufficient mechanical rigidity and is appropriate for measuring an extremely deep and narrow structure having a positive flank angle. SOLUTION: The micro-mechanical sensor includes a bar 2, with a tip 1 existing for interaction with a test face to be sampled on one of its ends, while a fixing block for fixing the bar 2 exists at the other end of the bar 2. The tip 1 includes a basically conic shank 1a having a dish-shaped tip part 1b.
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公开(公告)号：JPH11260247A
公开(公告)日：1999-09-24
申请号：JP301999
申请日：1999-01-08
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , KALT SAMUEL , MEISSNER KLAUS , PAUL RUDOLF
Abstract: PROBLEM TO BE SOLVED: To obtain a field-emission element of various types by which obstacles of prior art such as high leakage current or the like can be overcome. SOLUTION: This field-emission element contains plural tip parts 2 composed in each aperture 5 which are formed by a gate electrode. When a prescribed voltage between the gate and a cathode is applied, electrons are emitted from one or more tip parts 2 into a vacuum. The tip parts 2 are made of single- crystal silicon 1 or polycrystal line silicon, and all of them have nearly same the height and end in the boundary layer between single-crystal silicon 1 or polycrystal line silicon and an insulator 3, respectively. The plural tip parts 2 are formed through plasma etching without special lithographic process. The tip-part forming process can be applied to a substrate of an arbitrary size, so that this field-emission element can be applied to a flat panel display.
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公开(公告)号：JPH11258251A
公开(公告)日：1999-09-24
申请号：JP36210998
申请日：1998-12-21
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , DR ROBERT YUNJINJAA , KALT SAMUEL , HELGA WEISS
Abstract: PROBLEM TO BE SOLVED: To provide a micromachine-type sensor which is used to measure a shape by an atomic force microscope (AFM)/a scanning tunneling microscope(STM). SOLUTION: A micromachine-type sensor which is used to measure a shape by an AFM/an STM contains a cantilever beam 2 which holds a tip part 1a at one end and a fixed block 2 at the other end which is separated at a proper distance from the tip part 1a. The cantilever beam 2, the tip part 1a and the fixed block 3 are formed to be of a micromachine type. The tip part 1a is formed on the cantilever beam 2 at an angle of, e.g., 92 to 105 deg.. As a proper execution example, the tip part 1a is composed of polycrystal diamond, the cantilever beam 2 is composed of silicon nitride, and the fixed block 3 is composed of Pyrex glass. In addition, this invention is related to a tip part which is formed on a pedestal, to a tip part which comprises an arrow-shaped or spherical tip and to a method which forms the micromachine-type sensor.
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公开(公告)号：DE3175044D1
公开(公告)日：1986-09-04
申请号：DE3175044
申请日：1981-10-30
Applicant: IBM DEUTSCHLAND , IBM
Inventor： ASCH KARL , GRESCHNER JOHANN DR , KALLMEYER MICHAEL , KULCKE WERNER DR
Abstract: A probe head arrangement for contacting a plurality of closely adjacent conductor lines 2 comprises a minimum of one probe head 3, where a plurality of fingers 4 together with a back 5 are made in one piece of monocrystalline silicon in semiconductor technique. A plurality of such probe heads 3 are composed to form a tester. At the beginning of each test it is determined which fingers 4 are to be, and are not to be placed onto the individual conductor lines 2 of a card 1 to be tested. Subsequently, the short and interruption tests can be implemented after the correlation of finger and probe head addresses with the conductor line addresses.
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Patent Agency Ranking
公开(公告)号：DE3176643D1
公开(公告)日：1988-03-10
申请号：DE3176643
申请日：1981-10-30
Applicant: IBM DEUTSCHLAND , IBM
Inventor： BOHLEN HARALD , GRESCHNER JOHANN DR , NEHMIZ PETER DR
IPC: H01L21/027 , G03F1/20 , H01L21/266 , H01L21/308
Abstract: The mask is made using a silicon wafer(b), which is coated with a thin, p+ doped Si Layer(a). Wafer(b) contains troughs so it forms a grid of ribs below layer(a), which contains through holes(c) extending into the troughs. The bores of holes(c) and the surface of layer(a) are covered with an electrically-and thermally- conducting material(I), which resists attack by the ions, and has a thickness which prevents the ions from entering the silicon(a,b). Material (I) does not cause any deformation of the mask due to temp. changes or internal stress. Material (I) absorbs ions, and is esp. tungsten or tantalum; but a combination of materials which absorb or resist ions may be used. A diffusion barrier of Si3N4 may be located between material (I) and layer(a). Extremely small semiconductor devices can be made using masks which are dimensionally stable and which do not contaminate semiconductors being treated by ions.
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公开(公告)号：DE3069409D1
公开(公告)日：1984-11-15
申请号：DE3069409
申请日：1980-06-26
Applicant: IBM , IBM DEUTSCHLAND
Inventor： BOHLEN HARALD , GRESCHNER JOHANN DR , KULCKE WERNER DR , NEHMIZ PETER DR
IPC: H01J37/20 , H01J37/304 , H01L21/68
Abstract: The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam is split into a multitude of individual beams which interact with alignment marks on the substrate. The interaction is used to generate a coincidence signal. The signal to noise ratio of this arrangement is determined by the overall current and is comparable to that of a thin concentrated electron beam. Registration is effected in a small amount of time and the disadvantageous effects of the high current density used in the raster process are not a factor. In a preferred embodiment, the alignment pattern of the mask is a matrix with center spacings of openings increasing upon advance in two directions perpendicular to each other such that no distance can be represented by the sum of smaller distances. Alignment signals are provided by detecting either absorbed or reflected electrons. A plurality of detectors in the mask are used to detect the reflected electrons.
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公开(公告)号：DE3176140D1
公开(公告)日：1987-05-27
申请号：DE3176140
申请日：1981-10-30
Applicant: IBM DEUTSCHLAND , IBM
Inventor： BOHLEN HARALD , GRESCHNER JOHANN DR , KAUS GERHARD DR , KEYSER JOACHIM HERMANN , KULCKE WERNER DR
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公开(公告)号：DE3275447D1
公开(公告)日：1987-03-19
申请号：DE3275447
申请日：1982-07-03
Applicant: IBM DEUTSCHLAND , IBM
IPC: H01L21/302 , G03F1/20 , G03F7/09 , H01L21/027 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/306 , G03F1/00 , G03F7/02
Abstract: A method of making trenches having substantially vertical sidewalls in a silicon substrate using a three level mask comprising a thick photoresist layer, a silicon nitride layer and a thin photoresist layer. Openings are formed in the thin photoresist layer and silicon nitride layer by reactive ion etching in CF4. The openings are continued through the thick photoresist by etching in an atmosphere containing oxygen. The exposed surface of the silicon substrate is then etched in a CF4 atmosphere containing a low concentration of fluorine. Also disclosed is a method of making an electron beam transmission mask wherein the openings are made using the three level mask and reactive ion etching of silicon using the etching technique of the invention.
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公开(公告)号：DE3067832D1
公开(公告)日：1984-06-20
申请号：DE3067832
申请日：1980-07-10
Applicant: IBM , IBM DEUTSCHLAND
Inventor： BOHLEN HARALD , ENGELKE HELMUT DR , GRESCHNER JOHANN DR , NEHMIZ PETER DR
IPC: H01L21/027 , H01J37/317 , G03F7/20
Abstract: For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, a specific mask with corresponding correction openings can be used which is applied with the same, or with a different electron beam intensity. In a particularly advantageous manner the correction of the proximity effect can be achieved when complementary masks are used; the correction openings for the partial areas of the one complementary mask are arranged in the other complementary mask. The proximity effect is then corrected without an additional exposure step. For measuring the proximity effect a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process of the photoresist is discontinued prematurely. The ridge edges which in the presence of the proximity effect are asymmetrical can be easily detected under the microscope.
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