公开(公告)号：DE3069409D1

公开(公告)日：1984-11-15

申请号：DE3069409

申请日：1980-06-26

Applicant: IBM ,  IBM DEUTSCHLAND

Inventor： BOHLEN HARALD ,  GRESCHNER JOHANN DR ,  KULCKE WERNER DR ,  NEHMIZ PETER DR

IPC: H01J37/20 ,  H01J37/304 ,  H01L21/68

Abstract: The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam is split into a multitude of individual beams which interact with alignment marks on the substrate. The interaction is used to generate a coincidence signal. The signal to noise ratio of this arrangement is determined by the overall current and is comparable to that of a thin concentrated electron beam. Registration is effected in a small amount of time and the disadvantageous effects of the high current density used in the raster process are not a factor. In a preferred embodiment, the alignment pattern of the mask is a matrix with center spacings of openings increasing upon advance in two directions perpendicular to each other such that no distance can be represented by the sum of smaller distances. Alignment signals are provided by detecting either absorbed or reflected electrons. A plurality of detectors in the mask are used to detect the reflected electrons.

公开(公告)号：DE3176140D1

公开(公告)日：1987-05-27

申请号：DE3176140

申请日：1981-10-30

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： BOHLEN HARALD ,  GRESCHNER JOHANN DR ,  KAUS GERHARD DR ,  KEYSER JOACHIM HERMANN ,  KULCKE WERNER DR

IPC: H01R24/00 ,  H01L23/48 ,  H01L23/532 ,  H01R12/18 ,  H01R13/02 ,  H01L21/60

公开(公告)号：DE3175044D1

公开(公告)日：1986-09-04

申请号：DE3175044

申请日：1981-10-30

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： ASCH KARL ,  GRESCHNER JOHANN DR ,  KALLMEYER MICHAEL ,  KULCKE WERNER DR

IPC: G01R1/06 ,  G01R1/073

Abstract: A probe head arrangement for contacting a plurality of closely adjacent conductor lines 2 comprises a minimum of one probe head 3, where a plurality of fingers 4 together with a back 5 are made in one piece of monocrystalline silicon in semiconductor technique. A plurality of such probe heads 3 are composed to form a tester. At the beginning of each test it is determined which fingers 4 are to be, and are not to be placed onto the individual conductor lines 2 of a card 1 to be tested. Subsequently, the short and interruption tests can be implemented after the correlation of finger and probe head addresses with the conductor line addresses.

公开(公告)号：DE2963367D1

公开(公告)日：1982-09-09

申请号：DE2963367

申请日：1979-07-31

Applicant: IBM

Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  KULCKE WERNER DR ,  NEHMIZ PETER DR

IPC: H01L21/027 ,  H01J37/30 ,  H01J37/304 ,  H01L21/263 ,  H01L21/423

公开(公告)号：DE2807478A1

公开(公告)日：1979-08-23

申请号：DE2807478

申请日：1978-02-22

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD ,  GRESCHNER JOHANN DR ,  KULCKE WERNER DR ,  NEHMIZ PETER DR

IPC: G03F7/095 ,  H01L21/00 ,  H01L21/027 ,  H01L21/31

Abstract: Radiation sensitive layers are x-ray exposed by providing a metal mask pattern on the layer through which the layer is exposed. The metal mask pattern is formed by applying a blanket metal layer to the radiation sensitive layer followed by an electron beam sensitive resist layer which is patterned by an electron beam exposure process. The exposed portions of the metal layer are then etched away to form the metal mask pattern.

公开(公告)号：DE2962661D1

公开(公告)日：1982-06-24

申请号：DE2962661

申请日：1979-01-31

Applicant: IBM

Inventor： BOHLEN HARALD ,  GRESCHNER JOHANN DR ,  KULCKE WERNER DR ,  NEHMIZ PETER DR

IPC: G03F7/095 ,  H01L21/00 ,  H01L21/027 ,  G03F7/02

Abstract: Radiation sensitive layers are x-ray exposed by providing a metal mask pattern on the layer through which the layer is exposed. The metal mask pattern is formed by applying a blanket metal layer to the radiation sensitive layer followed by an electron beam sensitive resist layer which is patterned by an electron beam exposure process. The exposed portions of the metal layer are then etched away to form the metal mask pattern.

公开(公告)号：DE1772583A1

公开(公告)日：1971-05-13

申请号：DE1772583

申请日：1968-06-06

Applicant: IBM DEUTSCHLAND

Inventor： KULCKE WERNER DR ,  FINCK TRAUTE ,  D FRYE GORDON

IPC: G03H1/04 ,  G02B5/32 ,  G02B