公开(公告)号：DE3067832D1

公开(公告)日：1984-06-20

申请号：DE3067832

申请日：1980-07-10

Applicant: IBM ,  IBM DEUTSCHLAND

Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  NEHMIZ PETER DR

IPC: H01L21/027 ,  H01J37/317 ,  G03F7/20

Abstract: For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, a specific mask with corresponding correction openings can be used which is applied with the same, or with a different electron beam intensity. In a particularly advantageous manner the correction of the proximity effect can be achieved when complementary masks are used; the correction openings for the partial areas of the one complementary mask are arranged in the other complementary mask. The proximity effect is then corrected without an additional exposure step. For measuring the proximity effect a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process of the photoresist is discontinued prematurely. The ridge edges which in the presence of the proximity effect are asymmetrical can be easily detected under the microscope.

公开(公告)号：DE3065255D1

公开(公告)日：1983-11-17

申请号：DE3065255

申请日：1980-05-09

Applicant: IBM

Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  NEHMIZ PETER DR

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/20

Abstract: A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to the mask pattern. The throughholes in the semiconductor substrate extend from the metal layer-covered surface on the front to at least one tubshaped recess which extends from the other back surface into the semiconductor substrate. Holes are provided in a surface layer in the semiconductor substrate. The surface layer differs in its doping from the rest of the substrate and the holes which are provided in the surface layer have lateral dimensions larger than the apertures in the metal layer so that the metal layer protrudes over the surface layer.

公开(公告)号：DE3121666A1

公开(公告)日：1982-12-16

申请号：DE3121666

申请日：1981-05-30

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  MUEHL REINHOLD ,  NEHMIZ PETER DR ,  TRUMPP HANS-JOACHIM DR

IPC: G03B27/32 ,  G02B27/00 ,  G03F7/20 ,  G03F9/00 ,  H01J37/20 ,  H01J37/304 ,  H01L21/027 ,  H01L21/26 ,  H01L21/42 ,  H01L21/68 ,  H05K3/10 ,  H01L21/308

Abstract: For mutually aligning (registering) mask and substrate in X- or corpuscular ray lithography, an electron beam (16) is used which extends collaterally to the exposure beam (ion beam or X-ray) and which is suppressed during the actual exposure process. For coupling the electron beam to the exposure beam path, a magnetic field (7) is used. The accurate relative position of mask and substrate is determined during alignment by tilting the electron beam. Fine alignment during exposure is effected by suitably tilting the ion beam or shifting the substrate relative to the X-ray. The mask (10) used for exposure consists of a very thin silicon layer with a pattern area (M) and a registration area (R) spatially separated therefrom. The registration area consists of a plurality of openings, the pattern area of blind holes.

公开(公告)号：DE2963367D1

公开(公告)日：1982-09-09

申请号：DE2963367

申请日：1979-07-31

Applicant: IBM

Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  KULCKE WERNER DR ,  NEHMIZ PETER DR

IPC: H01L21/027 ,  H01J37/30 ,  H01J37/304 ,  H01L21/263 ,  H01L21/423