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    PROJECTION SYSTEM FOR CORPUSCULAR BEAMS
    1.
    发明专利
    PROJECTION SYSTEM FOR CORPUSCULAR BEAMS 未知

    公开(公告)号：DE3069409D1

    公开(公告)日：1984-11-15

    申请号：DE3069409

    申请日：1980-06-26

    Applicant: IBM ,  IBM DEUTSCHLAND

    Inventor： BOHLEN HARALD ,  GRESCHNER JOHANN DR ,  KULCKE WERNER DR ,  NEHMIZ PETER DR

    IPC: H01J37/20 ,  H01J37/304 ,  H01L21/68

    Abstract: The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam is split into a multitude of individual beams which interact with alignment marks on the substrate. The interaction is used to generate a coincidence signal. The signal to noise ratio of this arrangement is determined by the overall current and is comparable to that of a thin concentrated electron beam. Registration is effected in a small amount of time and the disadvantageous effects of the high current density used in the raster process are not a factor. In a preferred embodiment, the alignment pattern of the mask is a matrix with center spacings of openings increasing upon advance in two directions perpendicular to each other such that no distance can be represented by the sum of smaller distances. Alignment signals are provided by detecting either absorbed or reflected electrons. A plurality of detectors in the mask are used to detect the reflected electrons.

    PROCESS FOR COMPENSATING THE PROXIMITY EFFECT IN ELECTRON BEAM PROJECTION DEVICES
    2.
    发明专利
    PROCESS FOR COMPENSATING THE PROXIMITY EFFECT IN ELECTRON BEAM PROJECTION DEVICES 未知

    公开(公告)号：DE3067832D1

    公开(公告)日：1984-06-20

    申请号：DE3067832

    申请日：1980-07-10

    Applicant: IBM ,  IBM DEUTSCHLAND

    Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  NEHMIZ PETER DR

    IPC: H01L21/027 ,  H01J37/317 ,  G03F7/20

    Abstract: For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, a specific mask with corresponding correction openings can be used which is applied with the same, or with a different electron beam intensity. In a particularly advantageous manner the correction of the proximity effect can be achieved when complementary masks are used; the correction openings for the partial areas of the one complementary mask are arranged in the other complementary mask. The proximity effect is then corrected without an additional exposure step. For measuring the proximity effect a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process of the photoresist is discontinued prematurely. The ridge edges which in the presence of the proximity effect are asymmetrical can be easily detected under the microscope.

    SHADOW PROJECTING MASK FOR ION IMPLANTATION AND LITHOGRAPHY BY ION BEAM RADIATION
    3.
    发明专利
    SHADOW PROJECTING MASK FOR ION IMPLANTATION AND LITHOGRAPHY BY ION BEAM RADIATION 未知

    公开(公告)号：DE3176643D1

    公开(公告)日：1988-03-10

    申请号：DE3176643

    申请日：1981-10-30

    Applicant: IBM DEUTSCHLAND ,  IBM

    Inventor： BOHLEN HARALD ,  GRESCHNER JOHANN DR ,  NEHMIZ PETER DR

    IPC: H01L21/027 ,  G03F1/20 ,  H01L21/266 ,  H01L21/308

    Abstract: The mask is made using a silicon wafer(b), which is coated with a thin, p+ doped Si Layer(a). Wafer(b) contains troughs so it forms a grid of ribs below layer(a), which contains through holes(c) extending into the troughs. The bores of holes(c) and the surface of layer(a) are covered with an electrically-and thermally- conducting material(I), which resists attack by the ions, and has a thickness which prevents the ions from entering the silicon(a,b). Material (I) does not cause any deformation of the mask due to temp. changes or internal stress. Material (I) absorbs ions, and is esp. tungsten or tantalum; but a combination of materials which absorb or resist ions may be used. A diffusion barrier of Si3N4 may be located between material (I) and layer(a). Extremely small semiconductor devices can be made using masks which are dimensionally stable and which do not contaminate semiconductors being treated by ions.

    APERTURED MASK FOR CREATING PATTERNED SURFACES AND PROCESS FOR ITS MANUFACTURE
    4.
    发明专利
    APERTURED MASK FOR CREATING PATTERNED SURFACES AND PROCESS FOR ITS MANUFACTURE 未知

    公开(公告)号：DE3065255D1

    公开(公告)日：1983-11-17

    申请号：DE3065255

    申请日：1980-05-09

    Applicant: IBM

    Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  NEHMIZ PETER DR

    IPC: H01L21/027 ,  G03F1/00 ,  G03F1/20

    Abstract: A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to the mask pattern. The throughholes in the semiconductor substrate extend from the metal layer-covered surface on the front to at least one tubshaped recess which extends from the other back surface into the semiconductor substrate. Holes are provided in a surface layer in the semiconductor substrate. The surface layer differs in its doping from the rest of the substrate and the holes which are provided in the surface layer have lateral dimensions larger than the apertures in the metal layer so that the metal layer protrudes over the surface layer.

    5.
    发明专利
    未知

    公开(公告)号：DE2807478A1

    公开(公告)日：1979-08-23

    申请号：DE2807478

    申请日：1978-02-22

    Applicant: IBM DEUTSCHLAND

    Inventor： BOHLEN HARALD ,  GRESCHNER JOHANN DR ,  KULCKE WERNER DR ,  NEHMIZ PETER DR

    IPC: G03F7/095 ,  H01L21/00 ,  H01L21/027 ,  H01L21/31

    Abstract: Radiation sensitive layers are x-ray exposed by providing a metal mask pattern on the layer through which the layer is exposed. The metal mask pattern is formed by applying a blanket metal layer to the radiation sensitive layer followed by an electron beam sensitive resist layer which is patterned by an electron beam exposure process. The exposed portions of the metal layer are then etched away to form the metal mask pattern.

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