公开(公告)号：DE3279555D1

公开(公告)日：1989-04-20

申请号：DE3279555

申请日：1982-11-05

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  KOPCSAY GERARD VINCENT

IPC: H05K3/46 ,  H01L23/538 ,  H01L23/64 ,  H05K1/00 ,  H05K1/16 ,  H01L23/52 ,  H01L23/56

公开(公告)号：DE2623202A1

公开(公告)日：1976-12-30

申请号：DE2623202

申请日：1976-05-24

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  CHASTANG JEAN-CLAUDE ANDRE ,  LUSSOW ROBERT OTIS

IPC: H01S3/03 ,  H01S3/101 ,  H01S3/23

公开(公告)号：DE69018276T2

公开(公告)日：1995-10-19

申请号：DE69018276

申请日：1990-01-02

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  HU YUNG-HAW

IPC: C03C10/02 ,  C04B35/468 ,  C04B35/47 ,  H01G4/12 ,  H01B3/08 ,  H01B3/12

Abstract: A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO3 and/or SrTiO3 on the order of about 0.5-10.0 mu m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 mu m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol% of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.

公开(公告)号：DE69018276D1

公开(公告)日：1995-05-11

申请号：DE69018276

申请日：1990-01-02

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  HU YUNG-HAW

IPC: C03C10/02 ,  C04B35/468 ,  C04B35/47 ,  H01G4/12 ,  H01B3/08 ,  H01B3/12

Abstract: A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO3 and/or SrTiO3 on the order of about 0.5-10.0 mu m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 mu m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol% of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.

公开(公告)号：DE3851294D1

公开(公告)日：1994-10-06

申请号：DE3851294

申请日：1988-10-03

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  HOUGHAM GARETH GEOFFREY ,  GOLAND DAVID BRIAN

IPC: H05K1/09 ,  H01L21/48 ,  H01L23/13 ,  H01L23/15 ,  H01L23/498 ,  H05K1/05 ,  H05K3/12 ,  H05K3/40 ,  H05K3/44 ,  H05K3/46

公开(公告)号：DE3379820D1

公开(公告)日：1989-06-08

申请号：DE3379820

申请日：1983-06-01

Applicant: IBM

Inventor： BHATTACHARYA SOMNATH ,  CHANCE DUDLEY AUGUSTUS ,  KOOPMAN NICHOLAS GEORGE ,  RAY SUDIPTA KUMAR

IPC: H01L23/52 ,  H01L23/498 ,  H01L23/538 ,  H05K3/24

Abstract: A method of preparing a conductor for solder bonding and a substrate to which this method may be applied. The method involves the use of three layers comprising a conductor layer 32, a barrier layer 33 and a solder wettable layer 35'. Solder bonds may be made to this solder wettable layer. During thermal cycling there may, in the absence of the barrier layer, be a tendency for material from the conductor layer to diffuse into the solder wettable layer and thence into the solder where it can form intermetallic alloys with Sn in the solder, causing the solder to become brittle and liable to failure. The inclusion of a barrier layer of suitable material, eg Cr or Co, reduces this diffusion and hence increases the reliability of the solder bonds. Optionally, the method includes provision for solderless bonding by thermocompression or ultrasonic bonding. This may be performed on the barrier layer at 37 or it may be performed elsewhere.

公开(公告)号：DE2550677A1

公开(公告)日：1976-07-01

申请号：DE2550677

申请日：1975-11-12

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS

IPC: H01S3/038 ,  H01S3/03 ,  H01S3/08 ,  H01S3/22