公开(公告)号：JP2004317912A

公开(公告)日：2004-11-11

申请号：JP2003113726

申请日：2003-04-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FUKUZAWA TADASHI ,  SEKIYA KAZUO

IPC: G02B6/32 ,  G02B6/38 ,  G02B6/42 ,  G02B6/43 ,  H01L31/0232 ,  H01L33/00 ,  H01L33/08 ,  H01L33/58 ,  H01S5/022

CPC classification number: G02B6/4209 ,  G02B6/32 ,  G02B6/3885 ,  G02B6/4214 ,  G02B6/4249 ,  G02B6/4292 ,  G02B6/43

Abstract: PROBLEM TO BE SOLVED: To realize an inexpensive optical link module by optically coupling a 2-dimensional light laser array and a 2-dimensional optical fiber array and optically coupling a 2-dimensional surface light receiving element array and the 2-dimensional optical fiber array. SOLUTION: An optical link module 50 is an optical link module for performing connection of light beams by deflecting them and includes light emitting elements 62 arranged in a surface shape and an optical fiber bundle 70 being an optical waveguide for receiving light beams from the light emitting elements 62 and a light deflection element 58 which is arranged between the light emitting elements 62 and the optical fiber bundle 70 and includes a plurality of aspheric lenses formed respectively corresponding to the number of light emitting elements 62 and optical fibers. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JPH0827178B2

公开(公告)日：1996-03-21

申请号：JP29700492

申请日：1992-11-06

Applicant: IBM JAPAN

Inventor： MORITA TETSUHARU ,  KUNO TEIJI ,  FUKUZAWA TADASHI ,  ISOKI KOICHI ,  NODA HIROSHI

IPC: G01B9/02 ,  G01B11/14 ,  G01D1/02 ,  G11B21/21

公开(公告)号：JPH05235488A

公开(公告)日：1993-09-10

申请号：JP21668292

申请日：1992-08-14

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  RIN II RIU ,  EMIRIO YUUJINIO MENDEZU

IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/34 ,  H01S3/18 ,  H01S3/096 ,  H01S3/103

Abstract: PURPOSE: To modulate frequency and amplitude of laser light output by utilizing combined quantum well in an active region of a semiconductor laser. CONSTITUTION: An active region 120 of a variable wavelength laser comprises two quantum wells with a width of 50 Å or lower, which are separated by a barrier layer with a width of 20 Å or lower. The quantum well is made of intrinsic GaAs, and the barrier layer is made of Alx Ga1-x As (x=0.23). Since the active region is surrounded with a double hetero-structure, where a first side thereof is of doped p-type and a second side thereof is of doped n-type, a laser 30 is of a pin-type structure. A reverse bias against flat-band voltage with pin structure is applied to the pin structure, to modulate the frequency and intensity of the laser output. A variable wavelength laser is pumped by conventional means containing electric and optical pumping. The modulation of wavelength is almost linear in the operational range of 1.5 V.

公开(公告)号：JPH05136173A

公开(公告)日：1993-06-01

申请号：JP11044692

申请日：1992-04-28

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  MUNEKATA HIROO

IPC: H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812

Abstract: PURPOSE: To provide a method for manufacturing a new quantum thin line or quantum dot and further improve the performance of a device by applying a semiconductor structure with the quantum thin line or quantum dot to an electronic device. CONSTITUTION: Conductivity is permanently recovered by injecting a proper amount of III group element, such as Ga ion into the arbitrary region of a high-resistance GaAs layer 2. At a region 3 where the element is injected, As fine crystal is changed into GaAs single crystal by a solid phase reaction of Ga+As→GaAs by a proper annealing process, thus eliminating the depletion region of a carrier, to generate a carrier inside the ion-implanted region 3 of the GaAs layer 2, containing an excessive amount of As fine crystal or point defect that is doped but has a high resistance and entrapping it.

公开(公告)号：JPH0887724A

公开(公告)日：1996-04-02

申请号：JP22132394

申请日：1994-09-16

Applicant: IBM JAPAN

Inventor： FUKUZAWA TADASHI ,  KUNO TEIJI ,  WATABE HIROSHI ,  TAKAHASHI YASUYUKI ,  OZAWA KOJI

IPC: G11B5/455 ,  G01B11/14 ,  G02B27/00 ,  G02B27/28 ,  G11B5/60 ,  G11B33/10

Abstract: PURPOSE: To maintain a high measuring accuracy by making a measuring error due to an optical elastic phenomenon minimum by providing the polarization eliminator through which light reaching reflection member and light reflected from reflection parts pass in between optical lens member and the reflection member. CONSTITUTION: When light in a linear polarization state by passing through a polarizer 503 passes through a 1/4λ plate 570, it becomes a circular polarization state and receives multiple interfering actions reflected respectively from surfaces of a glass disk 23 and a head 21. These reflected lights are restored to linear polarization states by passing through again the 1/4λ plate 570. The direction of the linear polarization at this time is a direction rotated by 90 deg. from an original direction, at first, the direction of the linear polarization perpendicular to this paper plane becomes a linear polarized light having the polarization direction horizontal to the paper by passing through the 1/4λplate twice. Then, lights whose polarization directions are rotated by 90 deg. in such a way pass through again ojective lens system 507 to reach finally an optical detecting part 515 via an analyzer 513. Moreover, the polarizer 501 and the analyzer 513 are arranged in a form in which transmission polarization axes of them are orthogonal to each other.

公开(公告)号：JPH0765331A

公开(公告)日：1995-03-10

申请号：JP20530893

申请日：1993-08-19

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  KUNO TEIJI ,  MORITA TETSUHARU ,  ISOGI KOUICHI

IPC: G11B5/455 ,  G01B11/14 ,  G11B5/60 ,  G11B21/21 ,  G11B33/10

Abstract: PURPOSE: To promptly and accurately measure a floating height of a head by optimizing necessary coefficients of a theoretical formula based on a nonlinear regression algorithm when an interference optical intensity corresponding to the floating height of the head is measured by using a white lamp and a color CCD camera. CONSTITUTION: By using a white lamp, a color CCD camera calculates R, G, and B output vectors (y) corresponding to a floating height of a magnetic head by using mathematical models such as a polynomial coefficient vector (b) showing a slider profile, a floating height vector H, a function f (p, x), etc., and outputs them. In this case, a signal processing part operates similar arithmetic operations based on assumed refraction indices of each color and pseudo-vectors (b) according to the extinction coefficients, and a vector (p) of the function (f) is not adopted as a fixed value but is optimized by a processing of a method of least square according to a nonlinear regression algorithm so that a difference vector e between each output vector as the result of the arithmetic operation and the vector (y) becomes a minimum, and thus, it becomes possible to measure the floating height of the floating head quickly and precisely.

公开(公告)号：DE69217344D1

公开(公告)日：1997-03-20

申请号：DE69217344

申请日：1992-07-09

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  LIU LING YI ,  MENDEZ EMILIO EUGENIO

IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/34 ,  H01S3/103 ,  H01S3/19 ,  H01S3/094 ,  G02F1/01 ,  G02F1/03 ,  H04B10/00

Abstract: The present invention is the use of coupled quantum wells (122, 126) in the active region of a semiconductor laser (30) to modulate the frequency and amplitude of the light output (50) of the laser (30). In a particular embodiment of the present invention the coupled quantum wells (122, 126) are contained in a graded index (115, 130) of refraction semiconductor double heterostructure laser (30). The active region (120) of this tunable laser (30) consists of two quantum wells (126, 122) having a width of approximately 5 nm or less which are separated by a barrier layer (124) having a width of approximately 2 nm or less. The quantum well material is intrinsic GaAs and the barrier layer is AlxGa1-xAs wherein x=.23. The active region (120) is surrounded by the double heterostructure in which one side is doped p-type and the second side is doped n-type. The resulting laser (30) is a p-i-n type structure. A reverse bias with respect to the flat band voltage of the p-i-n structure is applied across the p-i-n structure which modulates both the frequency and the intensity of the laser output (50). The tunable laser (30) is pumped with a variety of conventional means, including both electrical and optical (40) pumping. The modulation of the wavelength is approximately linear over a 1.5 volt operating range. A tunable laser (30), such as the present invention, having an output wavelength modulated by an electric field is useful in the field of optical communications and computing.

公开(公告)号：DE69025564T2

公开(公告)日：1996-09-19

申请号：DE69025564

申请日：1990-12-07

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  KANO SATORU S ,  KUMATA KIYOSHI ,  LEE VICTOR Y ,  SCHELLENBERG FRANKLIN MARK ,  TAKAHASHI YUTAKA

IPC: G02F1/35 ,  G02F1/355 ,  G02F3/02

Abstract: The invention relates to a nonlinear optical device comprising a film structure (2) coated on a substrate (1) without interposition of adhesive. According to the invention the device is characterised in that the film structure comprises a modulated intercalation structure consisting of a layer of semi-conductor material and a layer of organic material, the layers having different energy gaps and the modulated structure being a super lattice structure. The invention also relates to a method of manufacturing a nonlinear optical device comprising dissolving an organic material in a solvent, and spin coating the solution onto a substrate and thereby forming an organic material film with one of its crystal axes oriented in the direction normal to the substrate, the film having a modulated structure of the two types of layers alternately intercalated and differing in energy gap in the direction.