公开(公告)号：GB2566664B

公开(公告)日：2020-03-11

申请号：GB201901265

申请日：2017-06-13

Applicant: IBM

Inventor： HARIKLIA DELIGIANNI ,  EUGENE O'SULLIVAN ,  NAIGANG WANG ,  BRUCE DORIS

IPC: H01F17/00 ,  H01L23/522

Abstract: A magnetic laminating structure and process includes alternating layers of a magnetic material and a multilayered insulating material, wherein the multilayered insulating material is intermediate adjacent magnetic material layers and comprises a first insulating layer abutting at least one additional insulating layer, wherein the first insulating layer and the at least one additional insulating layer comprise different dielectric materials and/or are formed by a different deposition process, and wherein the layers of the magnetic material have a cumulative thickness greater than 1 micron.

公开(公告)号：GB2536814A

公开(公告)日：2016-09-28

申请号：GB201604426

申请日：2016-03-16

Applicant: IBM

Inventor： HARIKLIA DELIGIANNI ,  NAIGANG WANG ,  LUBOMYR ROMANKIW ,  WILLIAM JOSEPH GALLAGHER ,  ANDREW JOHN KELLOCK ,  EUGENE O'SULLIVAN

IPC: H01L43/02 ,  C23C18/16 ,  C23C18/50 ,  H01F41/24 ,  H01L21/288 ,  H01L43/12

Abstract: An on-chip (on die) magnetic structure manufactured on a semiconductor (Si, GaAs, SiC) substrate 110, comprising (in sequence from substrate) an adhesive layer 120 upon which is deposited a Ni, Co, Pd or Cu seed layer 130 which has been further activated by immersion in a palladium Pd rich solution, to form a thin Pd nanoparticle over-layer 510. The cobalt-tungsten-phosphorus layer 610 is deposited by electroless plating on the palladium rich seed layer 510, 130 to form a high electrical resistivity Pd/CoWP magnetic layer 610/510 (620). The layers may be conventionally defined by photolithography. The magnetic material 620 comprises cobalt Co in a range 80 - 90 atomic percent (at. %) based on the total number of atoms of the magnetic material, tungsten (W) in a range from 4 to 9 atomic percent, and phosphorous (P) in a range from 7 to 15 atomic percent, (and more preferably 9 to 11 at%), the material further comprising palladium Pd dispersed throughout the magnetic material. The Palladium comprising Cobalt-Tungsten-Phosphorus (Pd + CoWP or Pd/CoWP) magnetic material 620 is preferably amorphous. The on chip magnetic structure resistivity is in excess of 100 µΩ.cm. The on chip magnetic structure may be a magnetic yoke, slab, inductor or transformer. The magnetic seed layer may be at least 40nm thick, the Pd-CoWP magnetic layer 620 having thickness 200nm to 1200nm (1.2µm). Applications for the magnetic structure may include miniature power converters.