公开(公告)号：CA974189A

公开(公告)日：1975-09-09

申请号：CA171176

申请日：1973-05-10

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: C07C49/39 ,  B01J19/12 ,  C07C45/00 ,  C07C45/60 ,  C07C49/395 ,  C07C49/443 ,  C07C67/00

Abstract: 1398676 Preparation of cyclobutanones from glutaric anhydrides INTERNATIONAL BUSINESS MACHINES CORP 14 May 1973 [12 June 1972] 22758/73 Heading C2C The invention comprises a process for the production of a cyclobutanone in which a substituted or unsubstituted glutaric anhydride is subjected to irradiation with ultra violet light in the vapour phase at a temperature within the range from 120‹ to 300‹ C.

公开(公告)号：DE3486011D1

公开(公告)日：1993-01-28

申请号：DE3486011

申请日：1984-08-29

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: C23C14/12 ,  C23F1/00 ,  C23F1/02 ,  G03F1/20 ,  G03F7/09 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/306

Abstract: A polymeric halocarbon is used as an etch barrier in a reactive ion etching process.

公开(公告)号：DE3483862D1

公开(公告)日：1991-02-07

申请号：DE3483862

申请日：1984-07-11

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: H01L21/027 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  H01L21/312 ,  G03F7/36

Abstract: A monomer vapour is pattern-wise exposed to a beam of ions (eg protons) to cause a pattern-exposed polymer film to be deposited on a substrate. If the exposed polymer film is resistant to oxygen plasma, surface portions of the substrate not protected by the deposited pattern-exposed polymer film can be dry etched with oxygen plasma. The substrate can be a silicon wafer. The pattern-exposed polymer film can be deposited on a resist film.

公开(公告)号：CA1072243A

公开(公告)日：1980-02-19

申请号：CA261430

申请日：1976-09-17

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  C08F20/52 ,  G03C1/495 ,  B41M3/08

Abstract: POSITIVE RESISTS CONTAINING DIMETHYLGLUTARIMIDE UNITS A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：CH600393A5

公开(公告)日：1978-06-15

申请号：CH1174076

申请日：1976-09-16

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03F7/02

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：FR2325077A1

公开(公告)日：1977-04-15

申请号：FR7623080

申请日：1976-07-20

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03C1/495 ,  H01L21/312 ,  H05K3/06

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：DE3888955T2

公开(公告)日：1994-11-10

申请号：DE3888955

申请日：1988-11-23

Applicant: IBM

Inventor： DICKSTEIN HEIDI LEE ,  HIRAOKA HIROYUKI ,  LEE JAMES HSI-TANG

IPC: G11B5/17 ,  G11B5/31

Abstract: The electrical insulation (22) surrounding the conductive coil (20) in a thin film magnetic head (11) comprises a photosensitive resin which has been crosslinked by a thermally activated crosslinking agent or promotor. The addition of the thermally activated crosslinking agent or promotor greatly reduces both the cure temperature and cure time and results in enhanced dimensional stability without any deleterious effects.

公开(公告)号：DE3486011T2

公开(公告)日：1993-07-01

申请号：DE3486011

申请日：1984-08-29

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: C23C14/12 ,  C23F1/00 ,  C23F1/02 ,  G03F1/20 ,  G03F7/09 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/306

Abstract: A polymeric halocarbon is used as an etch barrier in a reactive ion etching process.

公开(公告)号：DE3264019D1

公开(公告)日：1985-07-11

申请号：DE3264019

申请日：1982-06-08

Applicant: IBM

Inventor： ECONOMY JAMES ,  GRITTER ROY JOHN ,  HIRAOKA HIROYUKI

IPC: G03C1/72 ,  C08G8/00 ,  G03F7/039 ,  G03F7/26 ,  G03F7/08

Abstract: A positive working electron beam resist comprising a resinous condensation product of formaldehyde with a phenol or a cresol having a chloro substituent ortho to the hydroxyl group on its aromatic ring is imagewise exposed to electron beam irradiation and then the exposed portion of the resist is dissolved away to leave a petterned mask.

公开(公告)号：CA1044068A

公开(公告)日：1978-12-12

申请号：CA261615

申请日：1976-09-21

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: C08F8/00 ,  C08F8/30 ,  G03F7/039 ,  H01L21/027 ,  G03C1/70 ,  G03C5/24

Abstract: NITRATED POLYMERS AS POSITIVE RESISTS Positive resists are made using polymers and copolymers of methacrylic acid, methacrylic anhydride, methyl methacrylate, methacrylimide, and N-alkyl-methacrylimides which have been nitrated in up to about 10% of the monomer units on the methyl groups branching off the polymer chain. Inclusion of the nitro groups results in an increase of over an order of magnitude in the speed of development of images when the polymers are used as positive resists.